The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature life testing. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at...
Wafer-scale-assembly (WSA) technology has been developed for compact and light-weight applications at the Northrop Grumman Corporation. To insure successful insertion of WSA hermetic MMICs for military and space applications, high-reliability demonstration is essential. In this study, we performed two-temperature lifetesting to evaluate the reliability performance of WSA hermetic GaAs HEMT MMICs....
A V-band push-push GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) has been realized based on a 0.2 mum T-gate AlGaN/GaN high electron mobility transistor technology with an fT ~ 65 GHz. The GaN VCO delivered an output power of +11 dBm at 53 GHz with an estimated phase noise of -97 dBc/Hz at 1 MHz offset based on on-wafer measurement. To the best of our knowledge, this...
-A 0.1 mum n+-InAs-AlSb-InAs MMIC technology was developed for phased-array applications requiring ultralow power consumption. An n doped cap layer was utilized to provide lower access resistance and to reduce detrimental effects of cap layer etching during the process. As a result, the performance and manufacturability can be enhanced. In this work, we have demonstrated excellent DC and RF uniformity...
This paper describes a manufacturable and reliable 0.1 μm AlSb/InAs MMIC technology for ultra-low power applications. AlSb/InAs HEMTs have been demonstrated with only one-tenth power dissipation of conventional InAlAs/InGaAs/InP HEMTs. The uniform DC and RF performance of AlSb/InAs HEMTs have been demonstrated on 3-inch GaAs substrates. The further demonstration of reliable AlSb/InAs HEMT technology...
Scanning transmission electron micrographs were used to investigate the gate metal sinking effect in 0.15 mum GaAs PHEMT MMICs subjected to elevated temperature lifetesting. Gate metal sinking causes a decrease of the Schottky barrier height, therefore reducing the Schottky diode's forward turn-on voltage. The progressive gate metal sinking eventually leads to a drastic increase in the three-terminal...
Gate sinking effect of 0.1 mum InAlAs/InGaAs/InP HEMT MMICs (with Pt/Ti/Pt/Au gate metals) subjected to elevated temperature lifetests has been investigated. The results show that Pt sinking is the dominant degradation mechanism caused by Pt diffusing into the In0.52Al0.4As Schottky barrier layer. Pt sinking explains the observed evolutions of Schottky diodes, Ids-Gm transfer characteristics, and...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.