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This letter presents an ultra-wideband low noise amplifier (LNA) using gallium-nitride (GaN) high-electron mobility transistors (HEMT) technology. A -3 dB bandwidth of 1-25 GHz with 13 dB peak power gain is achieved using a modified resistive-feedback topology. To obtain such a wide bandwidth, several bandwidth enhancement techniques are utilized. An inductor connected to the source of the input transistor...
This paper reports on multi-decade bandwidth GaN HEMT cascode-distributed power amplifier designs which achieve performance from base-band to over 20 GHz. The GaN MMICs are based on a 0.2 mum AlGaN/GaN low noise T-gate HEMT technology with an fT ~ 75 GHz. To increase the MMIC power capability of this low noise GaN technology, a cascode DA design approach was employed which can operate at twice the...
Uniform millimeter wave 0.1 mum InP HEMT MMICs (Ka-band, Q-band, W-band, and distributed amplifiers) on 100 mm InP substrates have been demonstrated. Moreover, high performance and high reliability have been achieved. The results indicate that the readiness of 100 mm InP HEMT technology for insertion to support military/space applications.
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