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SONOS devices using gate injection programming and erasing have better cycling endurance because the gate oxide is not stressed by P/E operations. This work studies the gate injection behavior in detail using the recently developed gate-sensing and channel-sensing (GSCS) technique. GSCS accurately locates the charge centroid during programming/erasing and reliability tests. For the first time, we...
This paper carefully analyzes various charge-trapping NAND Flash devices including SONOS, MANOS, BE-SONOS, BE-MANOS, and BE-MAONOS. The erase mechanisms using electron de-trapping or hole injection, and the role of the high-k top dielectric (Al2O3) are critically examined. In addition to the intrinsic charge-trapping properties, the STI edge geometry in the NAND array also plays a crucial role in...
For the first time, we can directly investigate the charge transport and intra-nitride behaviors of SONOS-type devices by exploiting the gate-sensing and channel-sensing (GSCS) method. Our results clearly indicate that for electron injection (+FN program), the electron centroid migrates from the bottom toward the nitride center, whereas for hole injection (-FN erase), holes first recombine with the...
A novel PNOS (P-poly Nitride-Oxide-Si) device that exploits gate edge assisted hole injection is proposed to reduce the 2nd-bit effect. The device is erased by gate hole injection and programmed by the usual CHE (channel hot electron). Holes are injected from the gate edge using +FN and trapped in the SiN that produce local negative Vt along the channel edge. This edge device in turn causes enhanced...
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