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Unique hybrid approach employing both model-based layout optimization and process improvement was successfully developed for reducing rapid thermal anneal (RTA) driven intra die variations. It has been applied to multiple bulk and SOI designs. The model developed herein enables fast estimation of broad-band reflectance of a random layout in 65 nm, 45 nm, and 32 nm nodes and guides reflectance leveling...
This paper presents the technological process and electrical behaviour of SONOS FinFlash devices fabricated on silicon-on-insulator (SOI) substrates and including HfO2 in the inter poly dielectric (IPD). Using trimming techniques, ultra-scaled devices were processed with aggressive dimensions down to 10 nm channel width and 30 nm gate length. Good performances are obtained in Fowler-Nordheim (FN)...
Here we present a semi-analytical model for nanocrystal-based (NCs) FinFLASH memories under uniform stress: Fowler-Nordheim (FN) write/erase, gate disturb and data retention are addressed. This model is able to catch the essential features related to the non-uniform trapped charge distribution in such a complex 3D structure. Both body tied and SOI devices are included in the model. Main conclusions...
As CMOS devices further scale down, the variation of electrical parametric becomes significant and is critical for VLSI design. However, the difficulty in device statistical modeling also increases. The parasitics and second-order effect are not negligible, and the impact of process variations on device parametrics are usually correlated, which complicates the extraction of industry standard models...
Tri-gate FinFlash devices are one of the most promising solutions to solve scaling problems of Flash memories. The use of Silicon Nanocrystal storage nodes in novel 3D FinFET architecture offers the possibility of scaled gate dielectrics (implying scaled operating voltages), along with short channel effect immunity and higher sensing current drivability. In this paper, we investigate the channel length...
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