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In this paper, thorough study of Analytical thermal noise models for MOSFET is presented. Since the advent of basic MOSFET, various researchers develop the noise model. As, the device is shrinking the enhancement of the noise in the device attract researchers to make advances in the model according to new physical phenomenon that occur in deep sub-micron level. We are presented here, a review of recent...
In this paper we propose a new physically-based analytical model for junctionless transistors. Various MOSFET architectures based on single-gate (SG), double-gate (DG) and Gate-All-Around (GAA) transistors are studied. In particular the trade-off between the electrostatic control and the current drivability (first-order evaluation) is evaluated. Comparisons between numerical and analytical results...
With continuous scaling of transistors in each technology generation, NBTI and Process Variation (PV) have become very important silicon reliability problems for the micro processor industry. In this paper, we develop an analytical model to capture the impact of NBTI in the presence of PV for use in architecture simulations. We capture the following aspects in the model: i) variation in NBTI related...
Quantum mechanical analytical modeling for calculating the drain current of FinFET devices has been proposed in this paper. The work is presented for a FinFET structure with channel length of 30 nm, Fin height of 30 nm and Fin thickness of 20 nm. The variation of drain current with applied drain voltage and gate voltage for varying channel lengths and Fin thicknesses has also been evaluated. Our analytical...
A compact, physical surface potential model for undoped Gate All Around (GAA) MOSFETs has been derived based on a novel analytical solution of the 3-D Poisson equation with the mobile charge term included. The new model is verified by published numerical simulator, Silvaco Device simulator Atlas with close agreement. Applying the newly developed model, the channel potential versus gate voltage characteristics...
The paper is about a so-called ??diffusive representation??, a new modeling dynamic systems method and its application to efficient transient thermal modeling of multichip power module taking into account thermal coupling effects. Compact thermal models are required for many analyses during the design of power systems. Generally a RC-ladder model is used and analytical expressions enable to quantify...
Design of static converters circuits and virtual prototyping of power electronics systems requires the use of heavy semiconductors components models, with a large number of parameters whose exact knowledge often requires several delicate experimental measurements and heavy optimisations procedures. This paper presents a sensitivity survey that permits to determine which parameters of the SPICE3 MOSFET...
This paper, presents an analytical modeling of electron density in the active silicon region, the effect of back gate bias on front gate threshold voltage and estimation of the subthreshold slop for Double Gate MOSFETs. The various analyses have been carried out for symmetric and asymmetric structures where the asymmetric nature has been considered by virtue of altering the back gate insulator thicknesses...
A new mode of MOSFET operation with distributed gate voltage is proposed and a one-dimensional (1D) analytical model presented. Operation in the strong inversion regime of the laterally nonuniform (LNU) long channel devices is analyzed at room temperatures using gradual channel approximation considering carrier transport by drift alone. Models with linearly graded gate voltage show that these four...
We present here a new unified analytic model for ballistic and quasi-ballistic transport. Starting from the classical approach of Natori, we enhanced it by taking into account degeneracy and adding consistently an original modelling of short channel effect (SCE) and drain induced barrier lowering (DIBL) by including quantum confinement. Our model has been validated by comparisons with TCAD simulations...
This paper presents a new model for ultra short symmetric double gate MOSFET with gate lengths in the 10 nm to 50 nm range. A non-charge sheet based analytical model of undoped symmetric double-gate MOSFETs is developed in this model using the Surface Potential Plus (SPP) approach. The model is based on Cheming Hu model in solving the Poisson equation in the term of the electron concentration rather...
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