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A 10nm logic platform technology is presented for low power and high performance application with the tightest contacted poly pitch (CPP) of 64nm and metallization pitch of 48nm ever reported in the FinFET technology on both bulk and SOI substrate. A 0.053um2 SRAM bit-cell is reported with a corresponding Static Noise Margin (SNM) of 140mV at 0.75V. Intensive multi-patterning technology and various...
FINFET devices have generated an alternative convincing next-generation foundation in IC industry. The outrageously leaky Ioff current gets controlled as the channel length is imperatively shortened down to 40nm and below. Somehow, the 3-dimensional fin structure makes itself distinct from the traditional MOSFET transistors, e.g., the threshold voltages (Vt). In some channel lengths, Vt may turn to...
FINFET devices have demonstrated convincing low leaky Ioff current for the last decade and continue to take the leading role approaching to 10nm channel length. The imperative must for the next generation MOSFET transistors with 3-dimensional fin structure overwhelmingly replace the traditional MOSFET ones. However, the threshold voltages (Vt), in some cases, may turn out to be negative on NFINFET...
Fin-FET is so expected because it protects Ioff current from outrageously leaky as the channel length gets shorten continuously. It thus keeps the threshold voltage and the swing from rolling-up. Those good characteristics are manifested by the fully depleted region and the lack of leaky body as the gate is biased. In this study, the fin-thickness effect is to be noticeably discussed. The correlated...
We show that FinFET, a leading transistor architecture candidate of choice for high performance CPU applications, can also be extended for general purpose SoC applications by proper device optimization. We demonstrate superior, best-in-its-class performance to our knowledge, as well as multi-Vt flexibility for low-operating power (LOP) applications. By high-k/metal-gate (HK/MG) and process flow optimizations,...
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