The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Two-step direct current electroplating was used to fabricate copper microcylinders with a 50 μm diameter and 150 μm depth. The microstructure was characterised by electron back scattering detection. Twin boundaries appeared and the twin quantity depended on the current density. Near the edge (2 mA/cm2), the grain size was large (∼2 μm) and many twins existed, while the size was small (∼0.5 μm) and...
This paper compared the filling profile of electroplated Cu in through silicon via (TSV) with different aspect ratio at different current density. The experiment results indicated that bottom-up growth of Cu in TSV was obvious when the current density is 1 mA/cm2 and 3 mA/cm2. When the current density was 6 mA/cm2, the conformal growth of Cu was dominant. When the current density was 12 mA/cm2, the...
A method for making thin copper foil attached carrier was developed without additional release layer on carrier in this study. The carrier copper foil was two-layered structure, carrier and copper foil, which was different from the traditional three-layered. Copper is directly electrodeposited on certain carriers which have spontaneous and conductive oxides formed on surface. The oxides will be utilized...
A novel test sample with a micro scale free-standing specimen of Cu-TSV used for uniaxial micro-tensile test is presented in this paper. Design of a deformation-buffer reticular supporting frame of the test sample effectively reduces the deformation of Cu-TSV thin film during clamping operation. The stress resulting from electrodepositon process is minimized by fabricating Cu-TSV thin film on surface-treated...
We report on the interfacial properties of the K-doped C60: copper phthalocyanine (CuPc) heterojunctions, studied via synchrotron-radiation photoemission. The K-doped heterointerfaces were obtained by means of C60 on K1.5CuPc and CuPc on K3C60. The valence-band and K 3p core-level spectra show that the K diffuses and transfers negative charge into C60 overlayer at the C60/K1.5CuPc interface, while...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.