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Interface trapping is one of the most notorious effects that limit device performance in GaN-based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a comprehensive study on interface traps in AlGaN/GaN MISHEMTs using low pressure chemical vapor deposition SiNx as gate dielectric. We combined the trapping analysis in MIS diodes and actual MISHEMTs to estimate the interface...
We report on a novel vertical GaN trench structure using PEALD-AlN/GaN hetero-structure for the first time. Through characterizing PEALD-Al2O3/AlN-GaN MOS diode, the measured 2DEG density is as high as 2.7 ×1012 cm−2 located at the AlN/GaN hetero-interface. The vertical 2DEG channel with high electron density and mobility can be achieved by depositing AlN (PEALD) layer after trench etch of N-high...
This paper reports on high performance AlGaN/GaN MISHEMTs with an in-situ SiN gate dielectric. Resulting from the high-quality gate dielectric and dielectric/barrier interface, the MISHEMTs with a gate-drain distance of 15 µm exhibit a high maximum drain current density of 1050 mA/mm, a steep subthreshold slope of 72 mV/dec, and a low gate-drain leakage of 0.6 µA/mm at VGD of −900 V. The high breakdown...
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