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An epitaxial growth technique for 4H-SiC with B doping was developed to control the carrier lifetimes of the epilayers. A linear relationship was observed between the B doping concentration and the flow rate of tri-ethyl-boron, which was used as the B doping source. A room temperature photoluminescence spectrum of a N- and B-doped epilayer showed a broad B-related peak at 2.37 eV instead of a band-edge...
Epitaxial growth of 4H-SiC with intentional V or Ti doping was performed to obtain short minority carrier lifetimes, using VCl4 or TiCl4 as the doping sources. The doping efficiencies and quality of the epilayers were compared for H2+SiH4+C3H8 and H2+SiH4+C3H8+HCl gas systems. The addition of V or Ti in highly N-doped epilayer demonstrated very short minority carrier lifetimes of 20–30 ns at 250°C.
The forward voltage drops of pin diodes with the carbon implantation or thermal oxidation process using a drift layer of 120 thick are around 4.0 V and are lower than those with the standard process. The reverse recovery characteristics of pin diodes with the standard or carbon implantation process show almost the same tendency. In the reverse recovery characteristics at 250 ...
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