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The morphological evolutions of FePt–X (segregant) thin films were studied by employing a 3-D phase field model. Numerical simulation results show that in the absence of substrate constraint related with elastic energy, the morphology of the FePt–X thin films significantly depends on the interfacial energy, film thickness, and anisotropic atomic mobility. The large interfacial energy between FePt...
MnGa compounds possess several fascinating and useful properties, such as a large magnetocrys-talline anisotropy Ku, a high spin polarization P, a high Curie temperature TC and a flexible magnetization M. These results suggest that MnGa compounds are of potential candidates for spin-transfer-torque and rare-earth-free permanent magnet applications [1-2]. There are two most interesting tetragonal phases,...
The SnPb solder ball was reflowed on the Cu film in a flow of reducing gas, and the reactive spreading process was in situ recorded by a CCD camera. On the thicker Cu films, it was observed that dewetting did not happen even if the Cu6Sn5 intermetallic compounds spalled into the liquid solder. However, on the thinner Cu films, dewetting would occur when the liquid SnPb solder consumed the underneath...
The sputter-deposited Cu thin film, coated with a thinner gold layer, was prepared into the butterfly pattern with alternating zones beween Cu thin film and Si. The eutectic SnPb solder balls with different sizes were reflowed on the butterfly pattern. As a result, the liquid solder would be selectively retained on the Au/Cu film zones. At the same time, under the energy minimization control, the...
The SnPb solder ball was reflowed on the Cu film in a flow of reducing gas, and the reactive spreading process was in situ recorded by a CCD camera. On the thicker Cu films, it was observed that dewetting did not happen even if the Cu6Sn5 intermetallic compounds spalled into the liquid solder. However, on the thinner Cu films, dewetting would occur when the liquid SnPb solder consumed the underneath...
The sputter-deposited Cu thin film, coated with a thinner gold layer, was prepared into the butterfly pattern with alternating zones beween Cu thin film and Si. The eutectic SnPb solder balls with different sizes were reflowed on the butterfly pattern. As a result, the liquid solder would be selectively retained on the Au/Cu film zones. At the same time, under the energy minimization control, the...
In-Ga-Zn oxide (IGZO) TFTs was fabricated by ink-jet printing technology on a silicon substrate with SiO2 on top. The device fabrication process includes printing ITO electrodes and IGZO semiconductor layer. A typical printed TFT shows a mobility of 0.32 cm2/V s and a contact resistance of ∼1 MΩ. Device performance was further improved by inserting an IZO layer between the source/drain electrode and...
Characterization of a n-type Field Effect Transistor (FET) made from direct growth and patterning of a dense single wall carbon nanotubes (SWNTs) network on a silicon substrate, using alcohol as source gas, is presented. This SWNTs network film made into FET has a special feature which is significantly different from the amorphous silicon thin film transistor (TFT) or the MOSFET. The primary n-type...
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