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Ion Implantation and Anneal processes are very important for Transistor Characteristics. Even scaling devices such as 3D structures require junction engineering involving implantation and anneal processes to boost device performance. This paper will discuss some key issues in the DRAM cell and peripheral transistor, and propose requirements of processes and hardware. Data were evaluated in Logic and...
Recently, InGaP/GaAs/Ge 3-junction solar cells are widely used for space because of their higher conversion efficiency and better radiation-resistance compared to GaAs and Si solar cells. In this study, effects of base carrier concentration in GaAs and InGaP sub-cells upon their radiation resistance are analyzed by using radiative recombination lifetime and damage constant K for minority-carrier lifetime...
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