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The redistribution during annealing of low-energy B implants in SOI structures and in bulk Si have been investigated by comparing Secondary Ion Mass Spectrometry (SIMS) and simulated profiles. Samples preamorphised with Ge at different implantation energies have been prepared in order to investigate the effects of the damage position on B diffusion. The specimens have been subsequently B implanted...
In this work we investigate the promising properties of F in helping the B confinement in pre-amorphized Si, looking into the physical mechanisms acting. We studied also the effect of F on the electrical activity of B-doped junctions in pre-amorphized Si. The carrier dose, measured by four-point probe and Hall effect techniques, lowers because of F, with respect to the sample implanted only with B...
The effects of thermal annealing either on the electrical activation of implanted species or device isolation were investigated. Silicon implantation was used for n-type doping, Magnesium for p-type doping and/or devices edge termination, while Nitrogen for devices isolation. The ions species were implanted on n-type GaN films (~ 2times1016 cm-3) at energies between 30 and 180 keV and fluences in...
Silicon oxynitride gate dielectrics grown by plasma nitridation of RT radical oxide with subsequent post nitridation oxidation where characterized by different metrology methods like optical ellipsometry, X-ray photoelectron spectroscopy, corona characterization of semiconductors (Cocos), time-of-flight secondary ion mass spectroscopy and end-of-line transistor parameters. Several design of experiments...
For the 32 nm node, using msec only dopant activation techniques reveal the potential for serious device variation caused by both single wafer high current implanter design and msec annealing micro-uniformity variation effects. New non-contact metrology techniques with <1mm detection resolution such as RsL (electrical Rs and leakage) and TW (thermal wave dose and damage detection) are required...
The proposed multilayer structures Ni/Ag/M/Au, with blocking metal (M) of Ti and Mo, to form both ohmic and reflective contact for flip chip light emitting diode (FCLED) application, are fabricated. During the annealing process of conventional three-layer Ni/Ag/Au contacts, serious Au intermixing with Ag and Ni was found to result in poor reflectance (63% at the wavelength of 465 nm). It is found...
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