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Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant tunneling diode (RTD) to multi-million atom electronic structure modeling and the path for OMEN are laid out. The recent OMEN capabilities enable realistically large 3D atomistic nano-scale device simulation.
A new model to understand the origin of the dipole formed at high-k/SiO2 interface is presented. In our model, the areal density difference of oxygen atoms at high-k/SiO2 interface is considered as the cause of the dipole. On the basis of our model it is possible to predict the dipole direction and its magnitude for the candidate gate dielectrics, including ones so far not experimentally reported...
High speed resonant cavity metal-semiconductor-metal (MSM) Schottky barrier photo detector is reported. Nickel is used as metal and quasi mono-crystalline silicon (QMS) with nanovoids is used as semiconductor material. QMS is sandwiched between thin nickel plates to obtain heterodyne characterization of MSM photo detector. QMS of suitable dimension shows significant enhancement of optical absorptance...
The main challenges for Tunnel FETs are experimentally demonstrating SS<60 mV/dec, high ON currents and solving their ambipolar behavior. We have experimentally demonstrated a Double-Gate, Strained-Ge, Heterostructure Tunneling FET (TFET) exhibiting very high drive currents and SS<60 mV/dec. Due to small bandgap of s-Ge and the electrostatics of the DG structure, record high drive current of...
The scaling of electronic devices also requires the evolution of high energy density power sources. By using nanowires, high charge storage materials, which otherwise have mechanical breakage problems due to large structure transformations and volume changes, can be adopted as electrode materials. High power operation can also be possible due to the short lithium insertion distances in the nanowires...
Nanocluster Carbon thin films have been seen as an alternative semiconducting layer to a-Si:H. Amorphous and polycrystalline hydrogenated silicon are used as an active channel layer for the thin film transistors (TFTs) for long time. But these materials are fabricated at high temperatures. In this paper, we describe nanocluster carbon thin films as alternative materials for the TFT device application...
Materials have different behaviours and properties at the nanoscales (1-100 nm). New theories and discoveries have been found in designing and fabricating at these sizes. Silicon Nanowires has allowed the introduction of many new signal transduction technologies in biosensors. The design and fabrication of this silicon nanowire have been improved by sacrificial layer patterning using commercial photolithography...
This paper presents the manufacturing of a flexible 192-elements curvilinear CMUT array developed using our patented reverse fabrication process. In this process the silicon nitride CMUT membranes are surface micromachined over a silicon substrate such that the non-radiating surface of the transducer corresponds to the last layer deposited, while the radiating membranes are uncovered by completely...
Wavelength multiplexing/demultiplexing devices are considered to be one of the key elements in optical networks. Here we propose a new class of wavelength MUX/DEMUX devices which are based on change in the geometry of the multimode interference (MMI) waveguide region. This modification enables us to optimize device performances for a given set of refractive indices of core and cladding. The material...
Ultrathin semiconductor elements - nanoribbons, nanomembranes and related structures - created directly from bulk semiconductor wafers represent a class of material that can be useful for unconventional electronic systems, such as flexible/stretchable circuits or those that cover large areas (i.e. macroelectronics). This paper reviews some of our recent work in this area, including the soft lithographic...
We demonstrate an In0.66Ga0.34As/In0.355Al0.645As strain-compensated injectorless cascade laser; grown by MOCVD, with voltage defect ~30 meV, which is much lower compared to heterogeneous injector cascade laser with 79 meV and conventional cascade laser with 140 meV.
We report here the controlled growth and characterization of self-aligned and in-plane GaAs nanowires grown on GaAs (100) substrates with metalorganic chemical vapor deposition (MOCVD) and Au metal catalysts.
Nonlinear optical polymers provide a unique and powerful platform for constructing a wide variety of useful optical devices. Historically such polymers have been used in low index contrast, all-organic waveguiding systems, which have a number of significant limitations. With recent progress in silicon photonics, it is now possible to build low-loss, ultra-high confinement optical waveguides within...
We present a finite element based 3D model for Si-nc sensitized EDWAs, longitudinally pumped by broad area visible lasers. The effects of Si-nc to Er3+ coupling ratio and of multimode pumping scheme on the amplifier performance are numerically investigated.
Recently, power electronic devices have reached fundamental limits imposed by the low breakdown field, low thermal conductivity and limited switching frequency of Si. Substantial improvements can only be achieved by turning over to semiconductors showing remarkable performance in the frame. These are WBG semiconductors which constitute GaN, SiC and diamond which have long been swashed for their potential...
In recent days, various microwave absorbers are used for electromagnetic interference and compatibility measurements in anechoic and semi-anechoic chambers. The authors have synthesized three different polymer composites of epoxy resin modified by urea formaldehyde and silicon urea formaldehyde of different wt%. The samples were made as small films of specific dimension in order to test them in the...
Characteristics of the structures microfabricated by 20-keV Ga+ FIB on Si have been investigated with AFM images and photographs from a Nomarski microscope. The images from AFM showed redeposition effect inside and near the edges of the holes etched by FIB. The images also showed significant damages of the as-implanted structures induced by high current density of FIB. The relationship between the...
Traditional cross-sectional sample treatment methods such as BOE (Buffered oxide etch), can easily highlight Titanium Salicide (TiSi2) by etching away the TiSi2 (thus creating voids or cavitations) with no impact on the silicon underneath the salicide. However, this method does not work for devices using Cobalt Salicide (CoSi2) technology. The work presented here is to introduce a special etchant...
This paper presents the results of extensive simulations on the characterization of asymmetrical channel device, namely Dual material Gate Fully Depleted Silicon On Insulator (DMG-FD-SOI) in the sub-100nm dimensions with emphasis on the analog, radio frequency (RF) performances and short channel effects (SCEs). The obtained results may serve as useful guidelines to get a basis overview of this gate-material...
Wide-Band-Gap (WBG) alpha (4H and 6H)-SiC and beta(3C)-SiC based double drift region (DDR, p+p n n+ type), IMPATT devices are designed at sub-millimeter wave (Terahertz) region and their high frequency characteristics are compared for the first time through an extensive simulation experiment. The study indicates that at around 0.3 THz, alpha(4H)-SiC based IMPATT device can yield a RF power (PRF) of...
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