The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
In this paper, we report the simulation of high doping nanoscale heterojunction diode, particularly Si1−xGex/Si p-n diode, using Cogenda Visual TCAD. In order to gain knowledge on electrical properties of this diode, we exhaustively simulate the effect of Ge mole fraction in SiGe material on current, voltage and electric field characteristics. The simulation covers Ge mole fraction of 0.2 to 0.7 in...
Single-electron tunneling (SET) transistors have been studied for the past several decades because they are promising for low-power consumption and fundamental-level control of charge. The quantum dots (QDs) that are the main part of an SET transistor have been demonstrated in a variety of materials, but recently dopant-atoms in silicon have also been shown to work as QDs. However, a single conventional...
With continuous shrinking of devices in accordance with Moore's law, metal-semiconductor resistivity starts playing an important role for device performance. To meet ITRS target of 10−9 Ω·cm2 by 2023, it is important to evaluate the effect of different device parameters such as doping concentration, Schottky barrier height, strain and SiGe mole fraction on contact resistivity. In this work, such a...
In this study, individually ballasted carbon nanotube (CNT) field emitter arrays (FEAs) using a doped silicon ballast resistor are designed and fabricated. Each CNT field emitter is in series with an n-type doped silicon resistor with 10μm in length, a doping concentration of 1014 cm−3 and a cross section area of 1 μm2 to limit FE current from a single emitter no more than 1.2 μΑ. A systematic study...
We investigate the effect of diameter and doping condition on thermal conductivity of vertical nanowires. Vertical silicon nanowire array/spin-on glass (SOG) composite films were fabricated using CMOS technology to extract thermal conductivity of vertical nanowire. The thermal conductivity is reduced by about 27% when diameter is decreased from 350 nm to 190 nm. In addition, boron doped and phosphorus...
In this invited proceeding, we report our latest results on the development of Er3+ doped phosphate glass-ceramics. Those new glass-ceramics were processed using different techniques, such as direct doping of particles into the glass melt and glass-ceramics methods. First, we explain the challenges to balance the survival and dispersion of Er3+ doped particles when preparing phosphate glass-ceramics...
Plasmonic nanostructures serve to enhance light-matter interaction at the nanoscale. Metallic nanoantennas in conjunction with group-IV-devices can be used to enhance the efficiency of scaled-down devices [1] or to develop concepts for integrated biosensing [2]. However, for applications at wavelengths in the near-IR and mid-IR range, metals suffer from high Drude damping as a result of the high charge...
The influence of superlattice periods and well doping on the band structure and distribution of electrons for III-nitride intersubband photodetectors are theoretically studied. It is found that there are more wells populated with electrons with the increase of superlattice periods and doping concentration. This knowledge is beneficial to improve the intersubband absorption efficiency, providing theoretical...
In this paper, we use Poisson and drift-diffusion solver, effective Gaussian shape density of state model and Poole-Frenkel field dependent mobility model to simulate organic light emitting diode. Furthermore, to describe the model exactly, we also considered the mechanism of exciton diffusion and exciton annihilation. Finally, we study the influences of different doping region to the IV and exciton...
We analyzed charge carrier concentration distribution and electron spectra of the AlGaAs/In0.22Ga0.78As/GaAs quantum well pHEMT structures using experimental methods (photoluminescence and electrochemical capacitance-voltage profiling) coupled with a numerical simulation. The results of the PL spectra simulation and ECV free charge carrier distributions for the AlGaAs/In0.22Ga0.78As/GaAs pHEMT structures...
High frequency response is an important capability of infrared detectors in many applications. High-temperature long wavelength infrared HgCdTe heterostructure photodiodes exhibit sub-nanosecond time constants while operating under reverse bias. However, the noise, as well as the high current requirements are severe obstacles to their widespread applications. Thus, the present efforts are focused...
A quantum cascade structure (QCS) for the mid-infrared (IR) photon detection has been designed using nonpolar, m-plane III-nitride material system. The effect of temperature and active layer doping on the absorption coefficient has been studied theoretically for the designed QCS.
We propose a novel vertical metal oxide semiconductor device with high permittivity (HK) trenches interleaved inside of the drift region (HKMOS). The novel structure guarantees uniform potential distribution for a wide voltage range at the blocking state owing the potential modulation effect of HK trenches, which also introduce accumulation effect to significantly reduces the specific on-resistance...
We report the single carrier transport properties in the p-doped/less-doped graphene nanoconstriction structures. In the doped graphene devices, the overlapped Coulomb diamond characteristics are observed around the charge neutrality point (CNF) at 5 K. Reducing doping in graphene by annealing, the periodic peaks appear in the certain gate voltage range around the CNP. Additionally, the non-overlapped...
The Fermi level of graphene in contact with the metal contact is a critically important factor for graphene-based device design. Fermi level pinning like behavior at the metal on a graphene can limit the contact resistance reduction and other device operations, especially in high workfunction metal cases. We report that this problem can be substantially alleviated by the hydrogen anneal at high pressure...
Self-heating effects (SHEs) were studied on the vertical nanoplate-shaped gate-all-around (GAA) FETs (vNPFETs) as a target of 5nm node technology. The thermal properties are compared between face-up and face-down configuration. Decreasing the channel width is vulnerable to both configurations in terms of SHEs due to the reduced area of heat dissipation. It is well known that the SHE is alleviated...
For the first time, silver doping of bulk Gallium-Lanthanum-Sulphide (GLS) and Gallium-Lanthanum-Sulphur-Selenide (GLSSe) glass is demonstrated, presenting potential for a huge array of optoelectronic applications. Previously, silver doping of chalcogenide glasses were mostly based upon toxic, arsenic containing thin films [1-3]. GLS and GLSSe, however, offer a toxic free alternative, made by a safer...
Quantum cascade lasers (QCLs) are powerful sources of coherent radiation covering the frequency range from mid-infrared to terahertz. In the terahertz frequency range the active region is normally realized using a GaAs/AlxGa1−xAs semiconductor heterostructure. This material system enables a variable conduction band offset by changing the Al-content in the barrier layers without introducing a significant...
Complex tungstate and molybdate crystals are known as excellent host materials for doping with trivalent rare-earth ions RE3+, e.g. Yb3+ or Tm3+, [1] and they are Raman-active. Due to the structure features, they offer high RE3+ doping levels, low non-radiative relaxation rates, weak concentration quenching, and broad and intense spectral bands of the RE3+ ions in polarized light. Lithium metal molybdate...
This research proposes the hot filament chemical vapor deposition (HFCVD) for synthesis of p-type and n-type diamond by doping of boron trioxide (B2O3) and phosphorous pentoxide (P2O5) in ethyl alcohol (C2H5OH), respectively. The synthesis was conducted for 180 h with annealing under hydrogen atmosphere every 60 h to improve the quality of the diamond. Composition of the synthetic diamond was analyzed...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.