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III-nitride intersubband transition has attracted much attention due to their great potential to fabricate ultrafast optoelectronic devices with broad spectrum. However, under most conditions, the transition properties are adversely affected by the polarization effect and strain effect existing in nitride materials. In this work, the optical properties of intersubband transition in a GaN/Al0.28Ga0.72...
The influence of superlattice periods and well doping on the band structure and distribution of electrons for III-nitride intersubband photodetectors are theoretically studied. It is found that there are more wells populated with electrons with the increase of superlattice periods and doping concentration. This knowledge is beneficial to improve the intersubband absorption efficiency, providing theoretical...
We experimentally studied the photocurrent of AlAs/GaAs/AlAs double barrier resonant tunneling diode (RTD), which is composed of an InAs layer of self-assembled quantum-dots (QDs) on top of the AlAs barrier layer. It is found that the charging InAs quantum dots can effectively modulate the carrier transport properties of the RTD. Moreover, we also found that the resonant tunneling current through...
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