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We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift, for generic Ge-on-Si Photonics platform.
with the development of electronic information technology, the heating problem in microwave components is becoming more and more important. Reducing dielectric loss is an effective way to reduce component heat. Bi1−xYxFeO3 (x=0.02, 0.04, 0.06, 0.08) ceramics were synthesized by traditional state solid method, and the effects of Y3+ ions on magnetic and dielectric properties were studied. The XRD results...
Magnetic and dielectric properties of multiferroic (1−x)BiFeO3−xBaFe12O19 (x=0.03, 0.05, 0.07, 0.09 wt%) solid solution synthesized by state solid were investigated. Morphology of the sample is determined by SEM, indicating that the grain has been shrink, and all samples have been irregular. With increasing of BaFe12O19, saturation magnetization increased from 0.07 to 0.7 emu/g, and coercivity increased...
We report on a novel type of a room-temperature terahertz (THz) detector using a single walled carbon nanotube (SWNT) film, which is based on detection mechanism of the photothermoelectric effect. Enhancing difference in the Seebeck coefficient between two adjacent materials is a key technique for improving the detection sensitivity. In this work, we fabricated a p-n junction in the SWNT film by dropping...
A limiting factor of GaAs Schottky diodes used as mixers in heterodyne receivers is their high intrinsic noise when compared to SIS or HEB devices. This work presents results on the numerical optimization of fundamental Schottky diode mixers, results which predict a significant improvement in the noise performance of current Schottky mixer technology in the THz band. The optimization of the Schottky...
We present Terahertz (THz) measurements of dl-norvaline (dl-Nva) organic molecular crystals. This material undergoes a solid-state phase transition when the temperature is reduced to less than 180 K. The low temperature and room temperature phases have different THz absorption spectra, which allows them to be distinguished. A better understanding of the mechanism of the phase transition is gained...
Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next five years, 3C-SiC devices can become a commercial reality. It is therefore important to develop Finite Element Method (FEM) techniques and models for accurate device simulation. Furthermore,...
Three Ge-on-Si photodetector architectures with different contacting schemes are compared, with emphasis on their bandwidth. The study shows that bandwidth > 50 GHz and responsivity > 1 A/W at 1490 nm can be achieved using a commercial silicon photonics process.
Ge-on-Si has been demonstrated as a platform for Si foundry compatible plasmonics. We use laser thermal annealing to demonstrate activated doping levels >1020 cm−3 which allows most of the 3 to 20 μm mid-infrared sensing window to be covered with enhancements comparable to gold plasmonics.
In this paper, we provide an efficient method to improve the subthreshold characteristic of silicon-on-insulator (SOI) MOSFET using a vertical non-uniform doping profile for the drain region. Two different structures are simulated: uniform-drain (UD) and gaussian-drain (GD) SOI MOSFET and results are compared. Gaussian distribution function parameters such as peak doping density (Np) and standard...
In this paper, twin gate rectangular recessed channel (TG-RRC) MOSFET with independent gate control is used to realize its application in digital electronics by using it as two input logic. The input logic is controlled by the independent gates which have different work functions (Φ1 for gate 1 and Φ2 gate 2) which are separated by oxide layer of 2 nm, thus controlling various electrical parameters...
We investigate the temperature dependence of CrossTalk (CT) for PANDA Polarization maintaining fiber (PMF). The test temperature ranges from −55 to 85 °C, and the tested fiber was loose wound. The mismatch in thermal expansion coefficient between the boron-doped parts and the core can be varied by controlling the doping concentration in the stress and core regions. The whole temperature CT variation...
Scanning microwave impedance microscopy (sMIM) is an emerging electrical mode for scanning probe microscopy (SPM). We apply the technique to the profiling of dopants in semiconductor samples with sub-micron spatial resolution. This work demonstrates the practical application of sMIM for quantitative measurement of the dopant concentration profile in production semiconductor devices. A planar dopant...
Ion implantation is the most important silicon doping method in the process of semiconductor manufacturing. The common used analysis methodology such as FIB/SEM/TEM is restricted in analyzing the ion implantation related defects, while the chemical stain technology can provide very essential data in ion implantation process. The etching mechanism of silicon is very complicated with the mixture of...
Based on Meridian system, failure analysis of an advanced process LCD driver IC were conducted using laser voltage probing (LVP) and dynamic laser stimulation (DLS) techniques. The results demonstrate that LVP technique can effectively track cell transmission signal and intensity, and that failed location can be further identified accurately by using DLS technique followed by layout circuit analysis.
Fluorine doping of ZnO nanowires was realized by using a biased CF4 plasma treatment. The morphology, work function, electrical characteristics and field emission properties of ZnO nanowires were investigated before and after CF4 plasma treatment. Though lowered work function and resistance were observed, the ZnO nanowires exhibit higher turn-on field after CF4 plasma treatment. The results were explained...
The charge trapping characteristics of BaTiO3 film with various Zr contents were investigated based on Al/Al2O3/BaTiO3/SiO3/Si structure. The device with an appropriate Zr incorporation shows higher performance than the one without Zr doping, including higher operating speeds and better data retention. However, excessive Zr doping in BaTiO3 degrades the device performance mainly due to increased dielectric...
Black phosphorus and monolayer phosphorene is an emerging electronic materials for next-generation nanoelectronics. Here we report the polyaniline and protonic acid surface doping of thin black phosphorus to enhance its mobility and on-current, which will define new method to optimize of phosphorene electrical properties and open new revenue to study phosphorene electronics.
Fullerene molecular devices nowadays are becoming the intensive area of research due to their fascinating electronic, optical and structural properties. In this paper we have expounded the current characteristics of all-boron-fullerene B40 molecular device on doping with various elements. The advertent analysis of transport properties of B40 was done by doping third period elements viz aluminium,...
Fullerene molecular device configurations are center of allurement for varied number of electronic and transport characteristics by eccentricity of atoms epitomized in the same. In this paper, low bias conductive feature of smallest molecular device C20 has been observed using doping of transition metals. We examined the doping effect of manganese, iron, cobalt and nickel on C20 fullerene in a two...
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