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Semiconductor nanowires are typically fabricated into transistors using metal source and drain contacts but no doping profile, leading to devices that operate as Schottky-barrier field effect transistors rather than traditional MOSFETs. Because of this fundamental difference in geometry, the devices will operate with greater influence from the contacts in both current and noise behavior, yet many...
In this paper a 1.8 V, 2.4 GHz CMOS fully integrated low noise amplifier (LNA) has been implemented in 0.18 µm RF CMOS process for Wireless Local Area Net (WLAN) and Bluetooth band. Acceptable consumption with higher voltage and power gain are achieved using traditional cascode configuration. In this configuration, we successed to have a good trade off among noise, gain, and stability. In order to...
The excellent control over short channel effects achievable using FinFETs have made them an attractive choice for realizing low-power and robust logic circuits and SRAMs in ultra-scaled technologies [1]. For deeply scaled gate lengths of the order of 5nm, increased direct source to drain tunneling (DSDT) is expected to contribute significantly to the off-state leakage current [2]. Gate underlap has...
Random telegraph signals (RTS) are investigated on MOSFETs where a systematic procedure is developed to extract the RTS parameters from a large volume of multi-level switching events with a Poisson distribution. RTS measurements can be utilized to identify and characterize gate oxide defects with better resolution than frequency domain power spectral density, deep level transient spectroscopy, or...
High electron-mobility transistors can be used as efficient detectors of an incident THz radiation on its metallic electrodes. This detection can become strongly resonant if the frequency of the THz radiation coincides with plasma eigenfrequencies of the transistor channel. By using a hydrodynamic model we investigate in parallel the transistor intrinsic high-frequency current noise spectrum and its...
A generalization of the approach which describes the emission capabilities of micron and submicron semiconductor structures in terms of the spectrum of thermally non-equilibrium noise/emission temperature is considered for the case of three-terminals FET/HEMT structures. By using, in the framework of hydrodynamic approach, a direct numerical modeling of the frequency dependence of the components of...
The influence of random telegraph noise (RTN) in MOSFETs on drain current (Id) during transition edge of pulse gate voltage (Vg) was investigated. The Id fluctuation under dynamic Vg was larger than that under de bias by a factor of 2.2. We have revealed that the initial trap occupation states before varying Vg significantly affect the Id values during the transition edge of dynamic Vg. The trap occupation...
Following the intriguing results analytically obtained for the shot noise suppression in wide and short graphene samples with doped contacts, efforts were made to achieve an experimental verification, and, while one experiment yielded a clear confirmation of the theory, another one provided data with no clear dependence of the Fano factor on gate voltage. This was attributed to the presence of a disordered...
The proposed time-to-digital converter (TDC) arranges two Vernier gated-ring-oscillator (GRO) branches in a 2-dimension (2-D) fashion. All delay differences between X phases and Y phases can be used, rather than only the diagonal line. The large latency time inherited from Vernier structure is therefore dramatically reduced. The TDC is implemented in a 90nm CMOS process and consumes 1.8mA from 1.2V...
Nano carbon devices are promising for the next generation devices. Recently, a single-layer graphene has also been developed as nano-devices. For the device applications, there are several reasons why we should control the noise. Of course, the reduction of noise is one of strategies for nano devices as the noise might be increases for nano size devices including Si devices. On the other hand, noise...
Junctionless field-effect transistors (FETs) are now actively pursued as a future silicon transistor technology because of its good scalability, excellent electrical performance and relatively simple structure. There has been much research and technology development in JL FETs, their modeling, including some compact modeling, but relatively little work in modeling both noise and static characteristics...
We study scaling behaviour of terahertz responsivity and low-frequency noise of silicon MOSFET-based detectors. A set of 550-GHz resonant patch-antenna-coupled transistors with different channel widths varying from 320 nm to 1920 nm have been fabricated and investigated in temperature range from 77 K to 360 K. We find that the best sensitivities are achieved for narrowest devices without applied bias...
The microwave noise parameters measured on AlInN/GaN HEMTs devices with different gate length values are presented in this paper. 0.15-μm HEMTs achieve a maximum current density of 700 mA/mm at VGs = 0 V and a measured extrinsic transconductance of 350 mS/mm. The current gain cutoff frequency and the maximum oscillation frequency are 40 GHz and 70 GHz, respectively. At 10 (20) GHz, the device exhibits...
This paper considers the impact of transport dimensionality on the Hooge parameter behavior of various inversion-layer-channel MOSFETs. The phenomenological model proposed here gives a fundamental physical basis that allows important aspects of the Hooge parameter to be interpreted; the model also introduces three basic parameters (the Hooge parameter elements for the carrier-density fluctuation,...
The qualification of a technology needs rigorous and numerous stress experiments to attest of a high level of reliability. Low frequency noise measurements are known as an effective characterization method for the evaluation of device reliability. This technique is usually applied on the drain current spectral density, but it is now largely accepted that the gate access is a major reliability indicator...
In this contribution we report on the influence of the electrolyte on transport properties of the silicon nanowire (NW) field effect transistor (FET) biosensor studied using noise spectroscopy. The results show that exposing the Si NW FET top and side surfaces to the electrolyte solution not only affects the threshold voltage, but also influences the charge state of the gate dielectric traps. NWs...
Merits of Hooge's empirical relation for 1/f noise are investigated: SR/R2= α/Nf with N the number of free charge carriers and α a parameter with a range: 10−8 < α < 10−2, depending on temperature, lattice quality and mobility μ. Parameters affecting the α-value are discussed. We propose a model explaining: α ~ μ−m with m ≈ 3 as observed in undoped quantum wells (QW) and m ≈ 1 attributed to...
The noise spectra of the studied n-channel UTBOX devices contain flicker noise and Lorentzian components. At room temperature it was found that the flicker noise is explained by the carrier number fluctuation model for both front and back interfaces. Due to the thin silicon film thickness a strong electrostatic coupling between front and back interface was evidenced. The evolution of the low frequency...
The experimental gate current-voltage and low frequency current noise characteristics of AlGaN/GaN High Electron Mobility Transistors are presented and interpreted within a Space Charge Limited Current model. The Hooge parameter and gate noise parameter are extracted. Through the analysis of Lorentzians observed in the spectra, two traps are identified.
A design methodology of reconfigurable distributed low noise amplifier (RDLNA) dedicated for wireless home communications operating from 0.8GHz to 11GHz is presented in this paper. This RDLNA is suitable to operate in two different operation modes: low power consumption mode and high performance mode. The used technology is 0.15μm InGaAs Active Layer pHEMT Process provided by TRIQUINT. The circuit...
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