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GaN High Electron Mobility Transistors (HEMTs) are very promising for radiofrequency applications and especially RADAR operation due to their ability to work at high power densities. However, parasitic effects like traps are a common issue on this type of technology. They have to be properly characterized in order to be compensated. Several measurement methods exists like DLTS or DLOS, mostly consisting...
Failure mechanisms in AlGaN/GaN HEMT RF power amplifiers implemented on silicon substrate and envisaging radar operating conditions are investigated in this paper. Several power amplifier prototypes have been designed, fabricated, characterized, and tested. Ageing tests were performed in conditions as close as possible to real applications. Ageing under increased drain voltage allowed studying both...
A paradigm shift is apparent in Chip Multiprocessor (CMP) design, as the new performance bottleneck is becoming communication rather than computation. It is widely provisioned that number of cores on a single chip will reach thousands in a decade. Thus, new high rate interconnects such as optical or RF have been proposed by various researchers. However, these interconnect structures fail to provide...
This paper introduces flexible radio techniques inside integrated circuits in order to tackle the interconnect issue for many-core chips. We propose to take benefits from OFDMA for a RF-interconnect associated to a carrier allocation policy and adaptive modulation. A 20 GHz bandwidth is shared between 32 tile sets made of 32 tiles of 4 cores each, for a 4096 cores chip. We adopt a cognitive radio...
We propose in this paper a power adaptive zero-IF receiver based on a wide-band Low Noise Amplifier (LNA) dedicated to wireless home communications operating from 0.8GHz to 11GHz. Two different operation modes (low power consumption mode and high performance mode) controlled by bias conditions are applied to this LNA. The bit rate error (BER) estimated by the Q-factor of eye diagram is used as mean...
This paper presents measurement of AlGaN/GaN HEMT temperature with two techniques. Coupling of infrared thermography and electrical characterization of drain current shows good agreement of both techniques. They are complementary and may allow spatial cartography of HEMT channel temperature. By applying these methods to life test and coupling it to physical investigations, we demonstrate that degradations...
This paper describes a simple technique for on wafer passive multi-port circuits characterization. This method gives an efficient measurement of the scattering S-parameters of these devices at their ports reference planes. Furthermore, it provides cost saving in terms of used wafer surface and equipments by using an universal two-port Vector Network Analyzer (VNA). This method is applied to the characterization...
A design methodology of reconfigurable distributed low noise amplifier (RDLNA) dedicated for wireless home communications operating from 0.8GHz to 11GHz is presented in this paper. This RDLNA is suitable to operate in two different operation modes: low power consumption mode and high performance mode. The used technology is 0.15μm InGaAs Active Layer pHEMT Process provided by TRIQUINT. The circuit...
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