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This paper proposes a Zero-Voltage Ride-Through (ZVRT) method and an LCL filter optimization design method to meet the Fault Ride Through (FRT) requirements for a singlephase grid-tied inverter with a minimized LCL filter. The inverter output current overshoots at a voltage sag when the small LCL filter is used. As a proposed method in this paper, the inverter output current overshoot is suppressed...
In this study, design considerations of gate driver for silicon carbide (SiC) power devices is discussed. The work is focused in minimizing the common-mode current injection into the control circuit, thereby adapting the gate circuit to operate at higher dv/dt of fast switching transients. By reducing the common-mode interference with the control circuit, the signal integrity can be increased, spurious...
SiC-MOSFETs have attracting increasing attention because of their outstanding characteristics that contributes to high efficiency and high power density of power converters. However, compared to conventional Si-IGBTs, SiC-MOSFETs are susceptible to false triggering, because they tend to generate large switching noise due to ultrafast switching capability and have a lower threshold voltage in high...
In this paper, an integrated gate drives and current sensing solution for SiC (Silicon Carbide) power module is proposed. The gate drives and current sensing share the same isolated power supply to minimize the amount of dc rails. The isolated power supply is based on fly-buck topology, which is very suitable for high-frequency operations to minimize the volumetric occupation. Each gate drive has...
Active gate driving has been shown to provide reduced circuit losses and improved switching waveform quality in power electronic circuits. An integrated active gate driver with 150 ps resolution has previously been shown to offer the expected benefits in GaN-based converters. However, the use of low-voltage, high-speed transistors limits its output voltage range to 5 V, too low for many emerging SiC...
With their intrinsic superiorities such as high breakdown electric field and high thermal conductivity, SiC MOSFETs are replacing Si IGBTs in power electronics applications. However, at higher voltages SiC MOSFETs are at early stage of development and are not commercialized yet. For the first time, this paper presents thorough static and dynamic performance characterization of 3.3 kV and 30 A discrete...
In this paper, a comparative evaluation between a commercial 3.3 kV/400 A Si-IGBT and a 3.3 kV/400 A SiC MOSFET power module in half-bridge configuration is presented. With a constant current of 250 A, a lower forward voltage (VDS) drop of 1.6 V is obtained for SiC MOSFET at 300 K compared to Si IGBT. At 400 A, the difference is reduced to 1.3 V. SiC MOSFET offers an on-state resistance of 8.7 mΩ,...
The present work proposes a solution for implementing an isolated gate driver for SiC power MOSFETs. The isolation capability, gate switching and power transfer to the isolated side features are accomplished by using a unique magnetic transformer. To avoid core saturation, the original PWM control signal is modulated with a high frequency square-waveform. The on and off times are modulated with two...
1700V SiC modules were built with next-generation SiC MOSFETs, with 25°C RDSON per MOSFET cut approximately 50% from existing commercial SiC MOSFETs. Additionally, the external SiC anti-parallel diode was eliminated in favor of using the SiC MOSFET body diode during the dead time. The resulting 1700V SiC module used only 32% of the SiC chip area, yet reduced the 25°C module RDSON from 8mΩ to 5mΩ,...
This paper proposes a transformer based self-starting boost converter for thermoelectric energy harvesting, which operates even when polarity inversion of thermoelectric generator (TEG) occurs. TEG is used to convert thermal energy into electrical energy. Due to the Seebeck effect, an open circuit voltage of the TEG is proportional to the number of thermocouples in series and to the temperature difference...
In this paper, a resonant switched-capacitor dc-dc converter is proposed for data center application. The proposed converter possesses features such as high efficiency, high power density and light-weight. Zero current switching (ZCS) can be achieved with the resonant operation, which allows the converter operating under high efficiency. Proper switching device selection and in-depth power loss analysis...
This work proposes an Active Thermal Control (ATC) of power switches. Leveraging on the fact that thermal stress has wide impact on the system reliability, controlling thermal transients is supposed to lengthen the lifetime of electronic conversion systems. Indeed in some environments, such as transportation, reliability and lifetime are still obstacles to widespread adoption of electric and electronic...
Hybrid DC Breakers (HCBs) are crucial components in modern DC systems. Integrated Gate Commutated Thyristors (IGCTs) are widely used in high voltage HCBs due to their controllable turn-off capabilities under high power conditions. The focus of this paper is on the optimization of operation temperature when Gate Commutated Thyristors (GCTs) are applied in HCB applications. The operation conditions...
In the development of production systems, the engineering of Manufacturing Execution Systems poses a complex and time-consuming task. One of the specific tasks, which contribute to this fact, are the efforts necessary for the configuration of the shop floor gateway of an MES. In the past few years, a great number of promising approaches for the model-based systems engineering of production systems...
The performances of a frequency doubler based on a distributed amplifier are evaluated experimentally. The gate and drain artificial transmission lines have band-pass filter frequency behavior, centered on the fundamental and second harmonic, respectively. The circuit topology of this frequency doubler makes possible a significant reduction of the power level for the output fundamental and third harmonics...
This paper presents an implementation of the SenseGaN current sensing technique using Gallium Nitride (GaN) transistors as a representative of Wide Bandgap (WBG) semiconductors. For effective feedback control, fast over-current protection, and diagnostics-prognostics developments, precise current measurement becomes more important. While the integration and miniaturization of power semiconductors...
Designing of gate drivers for high voltage SiC power devices in medium voltage applications is challenging due to high dv/dt and di/dt at the switching instants. During short circuit fault, the device current rises with high di/dt, and eventually the device fails within few of micro seconds if not protected. Short circuit protection of power devices is an essential feature to improve reliability of...
A highly accelerated power cycling test platform using current source converter for SiC-MOSFET power modules is proposed. The control principles of delta and average junction temperatures are introduced. By using isolated thermal fibers, the junction temperature (Tj) variations can be monitored during the test process without removal of silicone gel. The power module is tested in the conditions of...
Silicon carbide (SiC) MOSFETs have been widely studied in high frequency applications. The switching performance, however, is limited with the existence of the parasitic elements. One critical issue is the susceptibility of the gate-source voltage to the parasitic elements, rendering the possibility of spurious operation of the SiC MOSFETs. This paper conducts comprehensive investigations on the impact...
This paper presents dV/dt control technology that enables lower switching loss and surge, especially higher speed switching of silicon carbide (SiC) devices. This technology is a surge reduction method using a high-speed passive gate driver that independently controls turn-on and turn-off events. Experimental results for a prototype gate driver confirmed that switching loss can be reduced by half.
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