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SiC-MOSFETs have attracting increasing attention because of their outstanding characteristics that contributes to high efficiency and high power density of power converters. However, compared to conventional Si-IGBTs, SiC-MOSFETs are susceptible to false triggering, because they tend to generate large switching noise due to ultrafast switching capability and have a lower threshold voltage in high...
GaN HEMT is generally characterized as fast switching and expected to achieve a power converter with high efficiency and high power density as a next-generation power semiconductor. However, the fast switching generates large switching noise, causing gate voltage fluctuation. Therefore, GaN HEMT can suffer from false triggering such as a false turn-on phenomenon due to its own low threshold voltage...
Wide band gap power semiconductor devices are now replacing the Si-MOSFET or IGBT. GaN-HEMT achieves the reduction in size and weight, thanks to its high frequency switching behavior. However, its high-speed switching characteristics and low threshold voltage may cause a false turn-on phenomenon, which is a fatal effect for the applications. It is urgent issue to tackle and avoid this problem by modifying...
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