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Imager topology with sub-ns time gating for 3D distance measurement application and first measurement results of the prototype are presented. The imager has a fully digital operating principle with single-photon avalanche diode detectors and on-chip narrow gating of pixel groups. The prototype detector has 80 × 25 pixels with a fill factor of 34 % in the sensor area. The chip has been fabricated in...
In this paper, a DC power supply for wide input-voltage range and multi output, which is applied to both 200-V and 400-V power sources, is proposed. This power supply consists of a flying-capacitor three-level PFC and a LLC resonant three-level DC/DC converter. In the PFC, the circuit topology enables to use 600-V devices, minimize the detection circuit and the gate drive circuit, and reduce the size...
In this paper, we show a possibility of Si resonant plasma-wave transistor (R-PWT) as THz detector. Κ the channel mobility of strained Si R-PWT is 400 cm·V−1·s1, R-PWT can be operated as THz detector when channel length l= 21–28 nm.
Power efficient Class-D audio amplifiers are very popular in mobile applications, despite the potential electromagnetic interference (EMI) caused by their output stage. Going to higher power levels, more effort has to be put into the reduction of EMI without sacrificing audio performance and efficiency. This work presents a Class-D output stage with an adaptive driver concept. The proposed driver...
This paper introduces an efficient hardware accelerated feature extraction architecture with a high spec of 1920×1080 image resolution at 120 fps. We choose MoFREAK feature [1] to implement in our real-time action recognition system. MoFREAK is a local spatio-temporal feature, which combines the appearance and motion descriptor independently. We design a two phase architecture to balance the throughput...
Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved...
Although the LPDDR4 interface has enabled industry requirements, such as low power consumption and high bandwidth, additional evolution of the current LPDDR4 performance is expected. To respond to the need for more power efficient devices with higher bandwidth, a 2nd generation LPDDR4 (referred to as LPDDR4X), with extreme low power and extended performance, has been developed in this work. In the...
High-speed phase frequency detector (PFD) is one of the key module for high-frequency phase locked loop (PLL) systems. The performance of PLL depends on the operation of PFD. This paper presents a new PFD design in 0.18μm CMOS technology using 3T XOR and 3T NAND gates. Supply voltage has been varied from 1.8V to 2.4V in the proposed design. The new PFD consumes power within a range from 505.78μW to...
This paper presents a new 8-PSK Super Regenerative Receiver operating in 402–405 MHz MICS band. The proposed topology employs minimum components to design phase detection engine. The receiver utilizes a combined Low Noise Amplifier (LNA) and Super Regenerative Oscillator (SRO) for current reuse purpose and a digital phase detection engine that extracts modulated phase information, via Latches and...
Advanced IGBTs need to be shut off when a short circuit occurs within less than 0.5μs as the current density of IGBTs increases. In this paper, a circuit design and the measurement results are described for an IC chip which enables the short-circuit detection within 20-ns. The circuit detects the short-circuit condition by checking the existence of a plateau in a gate drive waveform. The proposed...
This paper introduces a topology to combine multiple low voltage Piezoelectric Energy Harvesters with the goal of widening its harvestable frequency range and improving the power output. The architecture uses a shared inductor scheme and a rectifier-free approach. The proposed harvester is able to handle multiple harvesters efficiently by harvesting the peak energy from each harvester. The proposed...
This paper presents a differential phase detector circuit, whose phase-to-voltage characteristic has an extremum when its two input signals are exactly in phase. In this condition all its digital signals are of 50% duty cycle so that the circuit characteristic does not have a dead zone. This feature allows a precise indication of the zero-phase condition, which is independent of the detector power...
A new type of multi-rate clock and data recovery (CDR) circuit is realized that can operate at multiple data rates of 3.5, 7.0 and 14-Gb/s. A multi-mode rotational binary phase detector supports full-rate, half-rate and quarter-rate CDR operation with only one voltage-controlled oscillator. A prototype CDR circuit implemented in 65nm CMOS technology successfully demonstrates the multi-rate operation...
The need for simultaneous neutron and gamma detection continues to motivate the development of dual mode radiation detectors. One promising candidate is the elpasolite inorganic scintillator Cs2LiYCl6:Ce (CLYC). Previous studies, with other dual neutron–gamma detectors (EJ-299/EJ-309), have shown that the choice of digital data acquisition (DAQ) system can significantly affect pulse shape discrimination...
A series of small size 22Na point sources have been simulated using GATE, following the NEMA protocol, and applied to the geometry of a brain dedicated PET so-called MindView. The simulated scanner geometry is currently composed by one ring of 20 detector blocks with a distance of about 330 mm between opposite detectors. Each detector module includes a monolithic LYSO crystal of 50 × 50 × 20 mm3 and...
PACIFIC is a 64 channel mixed-signal ASIC designed for the readout of the Scintillating Fibre (SciFi) Tracker developed for the LHCb upgrade in 2018/19. The SciFi Tracker uses as active material 250 μm scintillating fibres, stacked in 6 layer mats and sensed by custom designed 128 channel silicon photomultiplier (SiPM) arrays. It will be comprised of 12 planes, each covering an area of 5×6 m2. PACIFIC...
Ultra-thick and ultra-thin Silicon PIN detectors are specially applied in high particles detections. The corresponding leakage current is investigated. The ultra-thick and ultra-thin gated diodes structures based on high resistivity silicon substrates are fabricated and tested to analyses the reverse leakage current for silicon PIN detectors application. It is concluded that the contribution of the...
In this paper three different field-effect transistor (FET) configurations are analyzed so as to improve responsivity and noise performance when used as terahertz detectors. FET configurations such as extended source and trapezoidal gate are realized: measurements on a fabricated prototype demonstrate relevant increase of the photoresponse, in the order of 40%, and an improvement of approximately...
We examine array configuration and silicon-lens integration of asymmetric-dual-grating-gate high-electron-mobility transistors (A-DGG HEMTs) as plasmonic terahertz detectors in order to enhance their external coupling efficiencies. We demonstrate 4-fold enhancement of the efficiency by an array of four series-connected detectors and 6-fold enhancement by the hyper-hemispherical silicon-lens integration...
Single photon detection is now realized by utilizing semiconductor quantum structures in a wide range of the terahertz (THz) region between submillimeter-wave to MIR light. In this paper, we provide THz photon-counting techniques and its applications to THz microscopy and on-chip THz detection for studies of semiconductor quantum transport.
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