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A novel inorganic quantum dot based light emitting diode is fabricated by microcontact printing of a well defined-geometry of CdSe/ZnS nanoparticles films onto p type silicon substrate that acts as the hole transporting layer.
Silicon quantum dots (q-dots) have been prepared through ultrasound treatments of light-emitting porous silicon layers (PSL) electrochemically etched from a p-type crystalline silicon (c-Si). The sonication treatments allowed separating the porous fraction from the bulk of c-Si as well as to mechanically reduce the dot dimensions. The ultrasound processes have been carried out in two different organic...
Junction field effect light emitting transistors (JFELET) were fabricated using silicon quantum dots in a conducting polymer matrix. The quantum dots with photoluminescence emission centered at 650 nm were used. I-V and light emission characteristics for typical light emitting transistors are presented.
The electrical properties of Al/ZnO-nanocomposite/pSi n-p heterojunction diodes and optical properties of ZnO nanostructures on (100)Si substrates in polystyrene-acrylic acid diblock copolymers, are reported.
Nanopowders of rare-earth oxyorthosilicate (R2SiO5) containing Er were fabricated using Si nanowire templates and RE-cotaining sol-gel solutions. High concentration of Er3+ can be incorporated with low upconversion, and composition can be further modified using either Yb or Si nanowires for increased Er3+ luminescence for compact, high-gain material.
This paper investigates the silicon surfaces structured by femtosecond laser pulses by the scanning electron microscopy (SEM), atomic-force microscopy (AFM), third-harmonic (TH) generation, photoluminescence (PL), and Raman spectroscopy techniques.
This study demonstrates that in-line etching processes can be created to size the nanoparticles and produce a surface passivation layer. Photoluminescence measurements have been carried out to examine the dry etching process. It is found that the PL of Si nanocrystals (Si-NCs) blueshifts when the dry etching reduces the size of Si-NCs, consistent with the well-know quantum confinement effect. Hence,...
A nonlinear photovoltaic conversion at 400 nm has been observed in nanoscale Si-layered systems using spectral response measurements. Normally, the UV and blue conversion is poor because of the surface recombination within the thin superficial layer. For this reason conventional solar cells need a front face electronic passivation. In multi-interface cells this conversion is always negligible within...
Critical diameter of nanowires (NWs) grown on a lattice-mismatched substrate by MOCVD was experimentally determined to be inversely dependent on mismatch. Quantization effect is observed with narrow and blue-shifted micro-photoluminescence for InP NWs on Si.
We explore a new way for light emission around 1500 nm. The light-emitting layer composed of Er2O3 nanoparticles and spin-on glass is deposited on silicon wafers. We can improve the efficiency by codoping Yb2O3 nanoparticles
In this paper, we present two studies of nanocrystals prepared by the pulsed laser vaporization–controlled condensation (LVCC) technique. In the first study, we present a comparison between the surface oxidation, morphology and the photoluminescence (PL) properties of Si and Ge nanocrystals. In the second study, we compare the photochromic properties of Mo and W oxides nanoparticles with the properties...
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