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A laser is realized by flip-chip bonding an indium phosphide reflective semiconductor optical amplifier with a turning mirror to a silicon photonic circuit with a surface grating coupler. An external cavity laser is formed and single-mode CW lasing is demonstrated.
We demonstrate InAs/GaAs quantum dot lasers on silicon-on-insulator substrates by metal-stripe wafer bonding technology. Our III-V-on-Si bonded laser exhibits room-temperature lasing at 1.3 μm with current injection through the bonding metal stripe.
Conventional bonding techniques like fusion, glass frit, soldering, eutectic, and anodic bonding, have been used in packaging for micro-electro-mechanical systems (MEMS). These bonding techniques require high temperature which results in bending/buckling of MEMS devices especially in case of hanging structures. In this work, low temperature and low cost bonding techniques with commercially available...
We demonstrated bonding of thin film InP and Si using wafer direct bonding technique and compared with bulk InP/Si bonded sample in terms of bonding strength and defect formation. Electrical conduction through the interface was also investigated.
Silicon-based field effect devices have been widely investigated in recent years for the label-free detection of DNA hybridization. The devices rely on detecting changes in the electrical surface potential that occur as a result of adsorbing charged DNA. To provide surface-immobilized affinity receptors for DNA hybridization, a suitable organic interface is obligatory that has a high density of receptor...
We propose and demonstrate high-throughput multiple dies-to-wafer bonding method with up to 104 dies through temporary-bonding dies to handle wafer for batch processing. Various hybrid III/V-on-silicon lasers are demonstrated with CW operation at room temperature.
Tandem solar cells using different bandgap materials provide higher energy conversion efficiency than single junction cells. However, the need for current matching and lattice matching often restricts the material selection for multi-junction solar cells. To overcome these challenges, we report AlGaAs/Si dual-junction tandem solar cells fabricated by a combined epitaxial lift-off (ELO) and print-transfer...
The electrical properties of n+-Si/n-GaN junctions by room-temperature bonding were investigated. The n+-Si/n-GaN junctions exhibited linear current-voltage characteristics.
We investigated the electrical properties of highly-doped n-Si/n-Si and p-Si/p-Si junctions fabricated by using the surface activated bonding. Heights of potential barrier formed at the respective bonding interface were estimated by measuring dependence of their current-voltage characteristics on the ambient temperature. The heights of barrier were found to be varied due to annealing often the bonding...
We applied the low-temperature bounding for fabricating base/collector junctions of Si-based bipolar transistor structures. The common-base current gain of fabricated bipolar transistors increased as the ambient temperature was raised up to 165°C, which suggests that the low-temperature bounding might be useful for fabricating high-performance heterojunction devices.
A phosphorous doped CdTe boule was grown from melt using the modified vertical Bridgman technique. Single crystals prepared from the boule showed hole density of (5–10) × 1015 cm−3, resistivity ∼(10–50) Ω.cm and mobility of ∼50 cm2/v.s determined by Hall measurement. The two-photon excitation time-resolved photoluminescence (2PE-TRPL) measurement revealed a bulk minority carrier lifetime of ∼47 ns...
Magnetic tape drives have received significant attention for archival data storage owing to its low cost, low power consumption and large storage capacity. With the gradual shift towards cloud storage and more people relying on digital information everyday, the demand for tape drives is expected to increase steadily in the near future. Since tape drives are contact recording systems, pole tip recession...
We have meticulously investigated several pre-grinding parameters such as edge trimming width, depth, and edge-back rinse of smeared glue to mitigate the Si chipping and cracking and to enhance the yield in ultra-thin LSI wafer thinning for the thickness value of up to 20 µm, with respect to different types of temporary bonding glue and the glue thickness. After optimizing several pre-grinding and...
In this paper, we designed the grating with different periodicities on silicon. Aluminum or silicon dioxide would be filled in the inter-space of grating. Besides, the surface reflectivity of different structures was measured and the theoretical calculation was performed. By oxygen plasma-enhanced process, we successfully present the results of a low-temperature process for direct bonding of InP epitaxial...
We present a new type of acoustic resonator technology aimed to undoing the technological locks encountered during the realization of capacitive silicon MEMS resonators exploiting true Bulk Acoustic Wave resonances instead of structural ones. The single-crystal silicon resonators are driven through a combination of a static bias and dynamic voltage applied across a 700 nm-thick electrostatic gap parallel...
This paper reports a silicon-silicon anodic bonding process based on embedded glass. We successfully embedded glass into patterned silicon groove by fusion treatment and bonded it with another silicon wafer by anodic bonding process. This process realizes the precise control of bonding pattern and the depth of the bonding gap without electrical connection between two silicon wafers. Tension test result...
In this work, reliable electric interconnection for MEMS/NEMS devices was realized by Au/a-Si (amorphous Si) and Au/c-Si (single-crystal Si) eutectic reaction in anodic wafer bonding process. We measured different resistances of di fferent bonding areas under different bonding temperature. When bonding temperature is under 370 °C, the resistance of the different areas (from 200 µm2 to 1000 µm2) fluctuate...
In this paper we have reported that a novel method to maintain alignment accuracy in wafer bonding process utilizing resin as an adhesive material. We have proposed tentatively localized bonding method with 1100 nm near infrared (NIR) irradiation that is transparent to Si wafers. With the aid of our localized tentative bonding process, we have achieved maintenance of alignment accuracy when the 100µm...
This paper demonstrates a five layers wafer level packaging. This technology has been specially developed for chip scale atomic clock system package. It includes a sealed vapor cell and two supports for vertical-cavity surface-emitting lasers and photodetector. The sealed cavity is achieved by Glass-Silicon-Glass (G-S-G) anodic bonding with high hermeticity, high reliability and low bonding temperature...
In this paper, a novel crystal component package based on silicon TSV interposer substrate is demonstrated by using 3D integration technologies. It is distinct from conventional crystal component using ceramic-based substrate. This crystal component with advanced silicon-based substrate shows great manufacturability to replace traditional fabrication approach. In addition, the SU-8 sealing bonding...
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