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The synthesis of single-crystal silicon (Si) nanowires by a metal-catalyst-free vapor-liquid-solid (VLS) process was studied. Silicon nanowires have been successfully synthesized by simple thermal treatment without any metal catalyst. For cases without metal catalysts, Si nanowires are grown by VLS processes assisted by sulfur. It is thought that single-crystal Si nanowires are grown by a VLS process...
A multiscale hierarchical lithium-ion battery (LIB) anode composed of Si shells coaxially coated on vertically aligned carbon nanofibers has been explored. A high Li storage capacity of ∼3,000–3,500 mAh (gSi)−1 and > 99% Coulombic efficiency have been obtained. Remarkable stability over 500 charge-discharge cycles have been demonstrated. Particularly, this electrode present a high-rate capability...
Germanium has been highly investigated as a potential light emitting material for the integration of photonic devices on silicon-based electronics. In the search of merging electronics and photonics using only silicon and germanium as base materials, many unsuccessful attempts were made in the past to fabricate an efficient group IV light source. Indeed, these semiconductors are known to be poor light...
In this paper, a numerical simulation of thermal transport at the nanoscale is developed by solving the phonon Boltzmann transport equation by the Monte Carlo method. A full phonon dispersion is used to determine accurately the vibrational frequencies and group velocities of all phonon modes. Simultaneous conservation of energy and momentum in anharmonic phonon-phonon scattering events in enabled...
The photo-thermal properties of vertically etched gallium arsenide nanowire arrays are examined using Raman spectroscopy. The nanowires are arranged in square lattices with a constant pitch of 400 nm, and diameters ranging from 50 to 155 nm. The arrays were illuminated using a 532 nm laser with an incident energy density of 10 W/mm2. Nanowire temperatures were highly dependent on the nanowire diameter,...
Nanowires are filamentary crystals with a tailored diameter in the submicron range. This particular morphology has improved existing and inspired many novel applications such as biosensors 1, high mobility transistors, lasers 2,3 and solar cells 4. The one dimensional nature of nanowires is especially relevant for solar cells. First, by fabricating radial pn junctions in otherwise standing nanowires...
In this paper we propose CMOS-compatible Memristive-Biosensors as label-free, highly sensitive sensors for in-air detection of Vascular Endothelial Growth Factor (VEGF) molecules. The memristive behavior of the fabricated devices is strongly affected by molecules in proximity of the wire surface. In this paper, we demonstrate the reproducibility of the measurement based on the memristive voltage gap...
We fabricate silicon nanowire solar cells which, other than the texturing step, are processed by conventional silicon solar cell manufacturing equipment. The nanowires reduce reflection compared to standard multicrystalline cells, leading to higher short-circuit current. A less anticipated benefit is that the nanowires can also increase open-circuit voltage and fill factor. Compared to standard multicrystalline...
We show that with a Full-Band dispersion, the specific heat is closer to the experimental value than with an isotropic quadratic dispersion. So we use a Full-Band dispersion in the transport algorithm. A Monte Carlo algorithm has been developed to simulate phonon transport in silicon nanowire. It has been successfully used to simulate the thermal conductivity.
We demonstrate the orientation-controlled dielectrophoretic alignment of asymmetric Si microrods on a glass substrate with an asymmetric pair of electrodes. By applying AC bias to the electrodes, over 80% of the Si microrods align on the electrode pair so that a particular end of the microrod relates to a certain part of the electrode; the thick and thin ends overlap the thick and thin electrodes,...
Nanoelectronics will have to face major challenges in the next decades in order to proceed with increasing progress to the sub 10 nm nodes: approach zero variability, reduce leakage currents and access resistances at the same time, fully exploit 3D integration at the device, elementary function, chip and system levels. New progress laws combined to the scaling down of CMOS based technology will emerge...
Purely wurtzite InAs/InP quantum rod nanowires (QRod-NWs) emitting at 1.55 μm have been successfully grown on silicon substrates by VLS assisted molecular beam epitaxy. Microphotoluminescence studies of single QRod-NWs reveal a highly linearly polarized emission parallel to the nanowires axis. This very high degree of linear polarization (> 0.9) can be explained by the photonic nature of the NW...
We design a III-V nanowires based photonic cavity on top of SOI waveguide for light generation in the near infrared (~1.3μm) in a silicon photonic circuit. 3D electromagnetic simulations (FDTD) are performed to design a periodic array of III-V photonic NWs vertically grown on Si. High quality factor resonances and efficient coupling between these micro-resonators and the SOI waveguide is targeted...
A NEMS piezoresistive pressure sensor with annular grooves on the circular diaphragm is presented here. Silicon Nanowires (SiNWs) are embedded as sensing elements at the edge of the diaphragm. This new diaphragm structure improves the device sensitivity by 2.5 times under a low pressure range of 0∼120 mmHg with respect to our previously reported flat diaphragm pressure sensor. With the advantage of...
Silver nanowires are superior material for semitransparent electrode fabrication: with printing on a transparent glass or plastic film, deposited and mutually crossed-over silver nanowire network serves as a good electrical conductor, especially when they are composed of grain-boundary free crystallographic 1D nanowires. The free space among the network serves as transparent portion which light passes...
This paper presents a self-assembled method to fabricate the colloid nanoparticle monolayer based on the evaporation-induced process. The effects of environmental factors on the experimental result have been systematically investigated. After the optimization of the process parameters, the colloid nanoparticle monolayer was achieved with the assistance of PDMS template on the silicon substrate. Following...
There are some physical similarities in photonics and phononics; photon and phonon transports can be coherently controlled by micro/nanoscale artificial crystal structures. Similarities and non-similarities of two photon and phonon transports will be discussed and we focus on the coherent manipulation of phonon transport by phononic crystal nanostructures. We also discuss possibility of thermal conduction...
Nanowire Field Effect Transistors have emerged as a promising technology for point-of-care application. However, their application as quantitative sensors has not been well explored. In this work we propose a calibration scheme for multiplexed nanoribbon field effect sensors by utilizing the initial current rate rather than the end point detection. A linear response of nanosensors is observed in medically...
The monolithic integration of III-V nanowires on silicon by direct epitaxial growth enables new possibilities for the design and fabrication of electronic as well as optoelectronic devices. We demonstrate a new growth technique to directly integrate III-V semiconducting nanowires on silicon using selective area epitaxy within a nanotube template. Thus we achieve small diameter nanowires, controlled...
We propose a polarization splitting method based on near-field interference. Unlike conventional polarizers, our design does not absorb the undesired polarization but rather deflects light in a polarization-dependent manner. This could enable high efficiency polarization-resolved-imaging.
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