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We investigate heat conduction across the interface of a monolayer semiconductor and its supporting substrate using molecular dynamics (MD) simulations. For the first time, we show that for the interface between MoS2 and SiO2, thermal boundary conductance (TBC) is 15.5 ± 1.5 MWK−1m−2. The TBC is found to increase proportionally with the strength of the van der Waals interactions and is largely independent...
As beta-phase gallium oxide is gaining attention for potential application in electronic and optoelectronic devices, this paper addresses techniques for nanowire fabrication that offer the potential for low cost simplicity with the uniformity and reproducibility that are necessary for useful device implementation of these nanowires.
This work reports the synthesis and materials characterization of novel heterogeneous nanostructures consisting of zinc oxide (ZnO) nanowires and silicon (Si) nanocrystals. Hydrothermal and non-thermal plasma synthesis techniques were utilized to create ZnO nanowires and Si nanocrystals, respectively. The heterostructures of ZnO nanowires and Si nanocrystals were formed and characterized using scanning...
We demonstrate electron transport characteristics of newly synthesized NiO nanoparticles on p-type Si substrate using scanning tunneling microscopy (STM). The resistivity and conductivity were determined to be 1.7×104 Ω.cm and 5.8×10−5 Ω.cm for Ni(OH)2 and 3.1×105 Ω.cm and 3.2×10−6 Ω.cm for NiO, respectively. Additionally, we also exemplify the characteristics features of graphene flakes with NiO...
Deterministic multi-layer micro-scale assembly of SU-8 polymer objects as well as the cohesively joined SU-8 interface strength have been investigated. The process of SU-8 photoresist (PR) into retrievable individual micro-scale objects format called “ink” is reviewed and the construction of three-dimensional (3D) unique micro-structures via micro-Lego, which refers to the transfer printing of the...
In this work it is showed that compressively strained Ge1−xSnx/Ge quantum wells (QWs) grown on a Ge virtual substrate are very promising TE mode gain medium. Moreover we show how emission wavelength and polarization can be controlled in Ge1−wSnw/SiyGe1−x−ySnx QWs. Demonstration of capabilities of presented QW systems bases on analysis of transverse electric (TE) and transverse magnetic (TM) modes...
We present a variational study of direct transitions in GeSn/Ge quantum well system for photonic applications. The exciton radiuses, binding energies, and oscillator strengths are calculated for various Sn contents are calculated and discussed.
In our recent work we have shown that the compressively stained GeSn/Ge quantum well (QW) is a very promising gain medium for lasers integrated with Si platform [1]. The material gain for such QW can be tuned in broad spectral range which is interesting for gas sensing [1]. Since Ge1−wSnw QW can be integrated with Si platform via Ge1−zSnz virtual substrate it is also possible to grown tensile strained...
We report here photonic crystal surface emitting lasers on bulk silicon substrates. Optically pumped lasers were demonstrated with single mode operation. Thermal resistance of such oxide-free cavity was investigated to evaluate the heat dissipation and lasing characteristics.
Raman spectroscopy and Rutherford backscattering spectrometry reveal that the thickness of a gold film deposited on silicon influences resolidification after pulsed-laser melting, giving rise to surface morphologies not observed with ion-implanted and laser-melted silicon. As film thickness approaches 5nm, these morphologies dominate the electrical behavior.
In this work, we demonstrate an integrated electronic-photonic platform in a standard 65 nm microelectronic CMOS 300 mm foundry. Alongside electronics, we monolithically integrate silicon avalanche photodiodes and optical waveguides that operate from violet to NIR through a mask-less post-CMOS-compatible fabrication process.
Laser die transfer technique provides an efficient solution for fast transportation of microchips in microassembly. Capillary self-alignment is able to achieve parallel and high-accuracy alignment of microchips on receptor sites. In this paper, we propose a new hybrid microassembly strategy, which combines laser die transfer and capillary self-alignment techniques. The laser die transfer technique...
Wireless Network-on-Chip (WNoCs) are introduced to improve the performance for long distance communication within a chip. The on-chip antennas utilized in these WNoCs can be omni-directional or bi-directional, broadcasting to every receiving antenna or directional only in a specific pairing, respectively. There are positives and negatives for both types of antennas, although bi-directional antennas...
Impact ionization [1,2], or electron-hole pair creation by charged particles, has been one of the central issues of semiconductor physics and devices. However, due to its complexity of the process, most experimental studies and their analyses have been macroscopic and phenomenological. This situation prevents us from exploring the fundamental physics of impact ionization and of high-energy charged...
We have successfully exploited multi-dimensional spaces of concentrations of the interstitial species, Si and Ge, geometries and compositions of the starting SiGe nano-pillar, and sources of Si interstitials (the Si3N4 and Si encapsulation layers) to create new classes of exciting optical and electronic devices such as single-electron tunneling devices, wavelength-tunable photodetectors, and MOSFETs.
Quasi-monocrystalline germanium (QMC Ge) is investigated for potential applications in high-efficiency, low-cost multi-junction solar cell design. The morphology and electrical resistivity of QMC Ge is characterized and computer simulations of MJSCs on Si substrates using QMC Ge interface layer are developed.
Crystalline silicon, used as a base material in the electronics industry, has been widely investigated in a variety of fields; particularly, nano- or micro-structured crystalline silicon will act as a fundamental element for photonics, photonic crystals, and solar cells.
Monolithically integrated light sources on silicon are key for future semiconductor microchips that comprise Si CMOS and on-chip optical interconnects as prerequisite for more energy efficient computers and data centres. Recently, major advances were achieved regarding direct integration of III-V gain material on silicon without introducing threading dislocations, especially via heteroepitaxy of semiconductor...
Short distance optical communication is required to reduce power consumption of ICT systems and continuously improve performance of datacentres and HPCs [1]. Reduced energy consumption and increased bandwidth density [2-3] are required to develop optical interconnects between chips and on chips. Therefore, lasers and detectors with ultra-low operating energy have to be connected by Si nanowire waveguides...
Polycrystalline silicon (poly-Si) has attracted significant interest in the area of silicon photonics because of its potential for combining good optical transmission, electronic functionality and low fabrication cost, which makes it an attractive material for commercial applications [1]. In addition, it was shown recently that by laser processing of amorphous Si (a-Si) it is possible to obtain very...
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