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A dielectric-metal double layer grating structure is proposed for high performance of polarization converter and one-way transmission in the terahertz (THz) region. The results show that this composite grating structure achieves a high polarization conversion of 90% and a broadband one-way transmission with an extinction nearly 30dB from 0.2 to 1.2THz. It provides a simple way towards practical applications...
In this presentation we will demonstrate how it is possible to compute properties of Sii-xGex alloys, using modern first-principles approaches which provide values for the band gaps in the entire range 0 ≤ x ≤ 1, as well as effective masses for Si and Ge (also when strain is applied) which all are in excellent agreement with experiments. These benchmarks show that appropriately chosen DFT methods...
Identifying the technology trends, key patents to be aware of, the key players active in the field, the product areas that are heavily patented or scarcely addressed, and the focus of a company's competitors represent crucial aspects of developing a successful strategic plan, determining a company's freedom to make and sell their product, and focusing future research & product development efforts...
Spin based optoelectronics is a research field that aims at the integration of magnetism with electronic and photonic functionalities. Here we address GeSn epitaxial heterostructures, which are emerging as prominent candidates for the monolithic integration of light sources on Si substrates. In particular, we apply optical orientation to gather experimental insights into spin-dependent phenomena....
Plasmonic nanostructures serve to enhance light-matter interaction at the nanoscale. Metallic nanoantennas in conjunction with group-IV-devices can be used to enhance the efficiency of scaled-down devices [1] or to develop concepts for integrated biosensing [2]. However, for applications at wavelengths in the near-IR and mid-IR range, metals suffer from high Drude damping as a result of the high charge...
Germanium-tin alloy (Ge1−xSnx), due to its direct gap nature for x > 0.08, has higher absorption coefficient than that of pure Ge. Using COMSOL Multiphysics, we have simulated the characteristics of Ge/GeSn/Ge heterojunction phototransistor, the base of which incorporates a multiple quantum well (MQW) structure made of Ge0.87Sn0.13 barrier and Ge0.75Sn0.155 well at a wavelength of 1.55 μm. The...
GeSn-based optically pumped lasers and photoconductors have been systematically investigated. The operation wavelength of these devices covers 2–3 μm. Since GeSn technique is fully compatible with current CMOS process, the GeSn-based devices can be widely used in the area of Si integrated photonics.
The decades long development in shrinking footprint and improving performance of photonics integrated circuits has seemingly slowed down in recent years, posing problems in e g interconnects in data centers with their ever increasing power requirements. Thus, routes to a continued development towards smaller footprint, lower power, higher performance integrated nanophotonics will be presented and...
Hyperdoping silicon with transition metals offers the potential of subbandgap photodetection, but metal impurities can be difficult to kinetically trap. Instabilities during solidification introduce large length-scale defects. We present guidelines for avoiding these instabilities, and electronic properties for layers that do not exhibit them.
For resistive random access memory (RRAM) applications, selector devices play an important role to ensure that an individual memory element can be properly addressed through reading and writing while at the same time the information stored in the other cells of the same array does not get perturbed and power does not get wasted by undesirable leakage through unselected cells. An ideal selector device...
A technique to fabricate a vacuum cold-cathode nanoelectronic diode with a remarkably low 2-V turn-on voltage was recently presented. A three-terminal device based on the same technology is here designed and fabricated, to implement a vacuum nano-triode. The attempt was partially successful as the excessively large gate radius does not allow effective current control. Nonetheless, the obtained experimental...
Thermo-mechanical stress accumulation in the power electronic integrated circuit (PIC) devices influences their lifetime and reliability. In order to determine both the temperature and the stress accumulation, numerical simulation is a very important tool in the design of PIC devices for quantifying and enhancing their lifetime and reliability. An open source solution integrated in Salome-Meca and...
Wafer Level Package (WLP) has become mainstream solution for handheld and mobile applications that require less Printed Circuit Board (PCB) footprint but comes with lots of functionality especially designed for high tier premium smartphones available in the market today. 28nm (RF) WLP is the bleeding edge of technology with regards to smallest transistor available in WLP packages that is in high volume...
Results obtained at integration of nano-laminated Dielectric-Metal-Dielectric (DMD) resistors in silicon MEMS sensors are presented in this paper. Fabrication technology with significantly reduced thermal budged for integration of DMD resistors in four-cantilever device has been developed. The ultrathin layers have been deposited in a consecutive RF sputtering process, without exposure to air, exploiting...
We propose a 2.1-D SiP that uses an organicinterposer for HBM applications and describe a demonstration of the technology. This SiP structure consists of a newly developed thin photosensitive insulation film multilayer (organic interposer) on a conventional organic package, enabling the package cost to be well controlled. An HBM interconnect was achieved in just two signaling metal layers with an...
To confirm the effectiveness of the via-last through silicon via (TSV) process consisting of notchless Si etching and wet cleaning of the first metal layer, we evaluated the metal contamination caused by this process. The metal contamination generated near the TSV was investigated by measuring the reverse-bias leakage current of n+/p diodes placed near the TSV. The TSV diameter was 6 µm and the n+/p...
Tip to Tip (T2T) of interconnect lines in advanced CMOS is quite important when downscaling the area of SRAM and logic standard cells. When T2T size is increasing we have less space for via placement. Additionally variability could impact the yield of the Dual Damascene (DD) structure because of via placement or alignment. As we continue to extend 193i lithography for patterning block using multi-patterning...
In our digital world, microelectromechanical system (MEMS) are here to stay and will open the doors for the next exciting wave in the advancement of technology such as the Internet of Things (IoT). The MEMS devices in wafer forms are fabricated in minute details and eventually singulated into individual units to act as sensing or actuation elements in various applications such as accelerometer and...
This paper describes the development of work function measurements using Kelvin probe force microscopy (KPFM) on semiconductor materials including high-κ/metal gate layers. We show how the choice of substrate and/or underlying films affects work function quantification. Other influences on work function measurement such as sample aging, humidity, and measurement mode were also studied. Finally, TiAl...
Fe-Si soft magnetic composites, SMC have some advantages such as excellent dc current superimposed permeability and low core loss over ferrite and Fe-Si bulk cores.
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