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Carbon thin films were deposited on Silicon (Si) substrates by electrolysis of methanol. The effect of camphor (C10H16O) - a natural source, incorporation in methanol is investigated. Camphor with varying amount (2%, 4%, 6% and 8%) was mixed in methanol solvent to prepare the electrolytes. Silicon substrates were mounted on the negative electrode. Remarkable change in the variation of current density...
This paper suggests an improved method to round off the concave corners of the deep trenches formed by plasma etch. The corner rounding technique, sacrificial oxidation (SACOX) before gate oxidation, has been practiced on the shallow trench isolation (STI) to improve the CMOS leakage performance. However, the direct implementation of the SACOX on the deep trenched MOSFET having less than 0.5 um trench...
With the developed process, four MEMS tensile testing chips of <;110>;-oriented single crystal silicon (SCS) nanobeams were achieved in one SOI wafer with thickness from 45 to 100 nm. Mounting the chips onto a custom made TEM sample holder, which integrated also comb drives and force sensor beam, in-situ TEM tensile tests were carried out. The measured Young's modulus (from 74 Gpa to...
We discuss the effect of scaling of the Ni thickness on the formation and stability of nickel silicide contacts. When scaling the Ni thickness from 15nm down to 5nm, the start of the agglomeration of the resulting NiSi layer is gradually shifted towards lower temperature. The influence of the microstructure of the polycrystalline NiSi layer on the agglomeration behavior, and methods to stabilize the...
In situ SiO2-doped SnO2 thin films have been prepared by liquid phase deposition method. The effect of SiO2 additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO2-doped CuO Au-SnO2 gas sensors (Si/Sn = 0.25 and...
Thin-film transistors (TFTs) based on solution-processed Zinc-Tin oxides (ZTO) of different Zn:Sn compositions are investigated. The solution-processed ZTO TFTs show rather high device performances, with the mobility up to 15 cm2/V-s, the on/off ratio up to 106~107 and a subthreshold slope <;0.6 V/decade.
Nanocomposite materials are attracting the attention of many researchers in the field of dielectric and electrical insulation. In this paper, we produced a dielectric coating on a glass surface by incorporating ZnO nanoparticles into RTV silicone rubber. Different concentrations of nanofiller (up to 40 % ZnO) were investigated. Physicochemical characterization of these coatings was performed using...
In this work, an atmospheric pressure plasma device, which was constructed as a coaxial arrangement with a discharge electrode and a quartz tube of 6 mm in an inner diameter, was experimentally investigated. The plasma under the atmospheric pressure condition was formed into a noble gas (Ar) stream exposed to dielectric barrier discharges controlled by pulse high-voltage applications. The atmospheric...
Combination of single images to panoramic views is a popular application of image stitching in digital photography. By applying the same principle to micrographs, a number of common limitations of microscopes such as aberrations or limited depth of field may be overcome. This paper adapts recent methods of image registration for different application areas in light- and electron microscopy. Especially...
In this study, the field electron emission from the vertically well-aligned CNTs catalytically synthesized in liquid methanol was measured to determine the relation between the emission properties and their morphologies. Heavily doped n-type silicon (Si) wafers with a low resistivity less than 0.02 Ω cm were used as a substrate for the CNT growth. The morphology and fine structure of the grown CNTs...
Single step growth of crystalline silicon on insulator (c-SOI) substrates based on rare earth oxide (REO) insulator layers are presented. Growth of crystalline REOs on silicon is possible due to their unique lattice matching to twice the lattice spacing of silicon. The single crystal nature of REOs make further silicon overlayer growth with moderate defect densities possible. In this paper we present...
In this paper we present results of SEM, XRD and EXAFS studies of palladium-carbon nanostructural films prepared in two-steps method on pure and oxidized silicon substrates. Structural, topographical and morphological differences were found between films deposited on those substrates.
Possibilities of applications Coherence Correlation Interferometry technique for topological studies of microporous materials on example C-Ni films deposited on porous silicon are discussed.
Growth mechanisms and optical properties of indium phosphide nanowires were investigated on various material surfaces. InP nanowires were grown on three types of substrate surfaces; Si, GaAs and a hydrogenated silicon template layer prepared on a quartz substrate, by metalorganic chemical vapor deposition. The role of substrate in nanowire growth mechanisms and optical properties is addressed.
Results of SEM characterization of CNT film grown on nanoporous silicon (NP-Si) plate covered with 2 step PVD/CVD layer are presented. SEM studies were performed for all stages of CNT film preparation process. It was found that the size of pores in NP-Si affects the final CNT film form and adhesion.
In this paper, the structures and field emission properties of energetic C ion irradiated SiNWs have been investigated and influence of ion irradiation on structures and properties has been discussed. Vertically SiNW arrays are synthesized by using Ag-assisted electroless-chemical etching at room temperature, as reported in literatures. The process mainly comprises three steps: 1) surface cleaning...
In this paper, a facile cold-wall chemical vapor deposition for direct synthesis of graphene film on Ar plasma treated Ni foil and Cu foil is presented. The carbon source CH4 along with the carrier gas N2 and H2 were introduced into the cold-wall chamber to supply the carbon to form the graphene film on the Ni foil and Cu foil surface. The as-grown graphene films were transferred onto the SiO2/Si...
In this paper we report the results of different experiments for the formation of titanium silicide -silicon interface by furnace annealing. The experiments have been performed with the final aim to implement a robust production process for the formation of titanium silicide Schottky barrier diodes (SBDs). Titanium silicide formation takes place by mean of the diffusion of the silicon atoms across...
We have experimentally demonstrated two methods for improving the coupling efficiency of grating couplers. A grating coupler-polarization splitter is measured to have over 50% efficiency for both polarizations. 68% efficiency for single polarization is achieved by a nonuniform grating coupler.
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