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In the framework of the construction of a novel Femtoscope Array for Correlation and Spectroscopy, named FARCOS, aiming at the identification in charge and mass even of particles stopping in the first detection layer, we are performing a thorough characterization of the silicon detector layers in terms of the collection properties as a function of the point of incidence. We have experimental evidence...
The continual trend of microelectronics to miniaturization, accompanied by the increase of the power density has given modern science a huge challenge. The thermal transport in an electronic device has to be addressed. Therefore, the fast and precise measurement of thermal properties like temperature, thermal conductivity and diffusivity is needed. Especially the spatial resolution needs to be enhanced...
Laser Fault Injection (LFI) is one of the most powerful methods of inducing a fault as it allows targeting only specific areas down to single transistors. The downside compared to non-invasive methods like introducing clock glitches is the largely increased search space. An exhaustive search through all parameters including dimensions for correct timing, intensity, or length might not be not feasible...
Quantum-confined Stark effect of Ge(Sn)/SiGe(Sn) quantum wells (QWs) is analyzed by many-body theory. Calculated absorption spectra of Ge/SiGe-QWs are in good agreement with the experiment. Also, the effect of Sn-incorporation is investigated for mid-infrared applications.
We report on a semiconductor laser on silicon platform with record-low sub-kHz quantum noise-limited linewidth, based on spontaneous emission control and optical loss reduction.
We present the first experimental demonstration of quantum entanglement distribution between silicon integrated photonic chips, linked by a single mode optical fiber. Entanglement states generation, transmission, manipulation and measurement are implemented intra/inter chips.
This work aims to study the reliability of the Si film thickness extraction method based on the capacitance derivative analysis in p-i-n gated diodes. Results provided by the derivative procedure are compared to the basic capacitance method (without the derivative). The basic method yields accurate Si-film thicknesses, but it can only be applied to relatively thick body devices where the supercoupling...
We demonstrate an integrated polarization rotator with a single trench on a silicon waveguide fabricated using a single etch-step complementary metal-oxide-semiconductor (CMOS)-compatible process. The measured polarization rotation efficiency is 95 % with 0.76 dB insertion loss for a total 67-μm long and 100-nm wide asymmetric trench.
We have proposed the dimensional metrological methods for smart devices using the optical comb of a femtosecond pulse laser. For precision and high speed measurements, these methods were realized based on spectral-domain interferometry.
We utilize near- and mid-IR ultrafast laser radiation to investigate the processing of crystalline silicon with different dopants. A numerical model is adopted to simulate the material response depending on the wavelength and the dopant concentration.
Tensile strain of Ge-on-Si with post-growth annealing was analyzed using micro-Raman for optical sources in interconnection system. Tensile Stain in epi-Ge distributed non-linearly with SiGe alloy formation at the interface after annealing.
A re-arrangeable non-blocking 8×8 silicon electro-optic switch was demonstrated. It had extinction ratios of 18.3∼25.5dB on all "Cross" status and 13.3∼19dB on all "Bar" status at 1550nm.
This paper presents an optimization-based technique to develop silicon substrate for accurate and efficient electromagnetic (EM) simulations. The proposed method simplifies the highly nonlinear substrate doping profile into a few regions with effective conductivities. The accuracy of the optimized substrate is validated against measurement data for two spiral inductors. This simplified substrate enables...
Understanding the optical properties of semiconductors at terahertz (THz) frequencies is crucial to THz semiconductor characterization and applications. Prediction of the optical properties requires precise knowledge of the dielectric function of semiconductor in different environments, such as variable temperature and dopant concentration. In this work, the optical properties of silicon without and...
Design of a new silicon readout circuit for infrared focal plane array (IR FPA) detectors which, alongside with the formation of thermographic images, offers an additional function of direct measurement of the time of fight of optical signals due to reflected laser pulses is reported. Such multielement IR FPA detectors enable the formation of three-dimensional images (via determination of the distance...
The ALICE Collaboration is preparing a major upgrade of the experimental apparatus, planned for installation in the second long LHC shutdown in the years 2018–2019. The key element of the ALICE upgrade is the construction of the new high resolution Inner Tracking System (ITS). It will be made of seven concentric detector layers based on a 50μm thick CMOS pixel sensor with a pixel pitch of about 30...
This paper propose the experimental determination of ideality coefficient or emission coefficient for an actual diode in laboratory, using NI ELVIS II+, which enables current-voltage characteristic lifting semi-logarithmic coordinates. In addition it is determined the reverse bias saturation current of diode.
The changes in short-circuit current of photovoltaic (PV) cells and modules with temperature are routinely modeled through a single parameter, the temperature coefficient (TC). This parameter is vital for the translation equations used in system sizing, yet in practice is very difficult to measure. In this paper, we discuss these inherent problems and demonstrate how they can introduce unacceptably...
The present article reports on experimental measurements aimed at assessing general theoretical expressions of temperature coefficients in the case of crystalline silicon solar cells. The relevance of a recently proposed relation between the temperature dependence of open circuit voltage and the external radiative efficiency of photovoltaic devices is demonstrated. Unusual temperature sensitivities...
Contact schemes for scaled Si, SiGe and Ge channel MOSFETs devices are discussed, consistent with an approach based on SiGe alloys with low Schottky Barrier Height (SBH) for pMOS and Si contacts for nMOS, making reduction of the SBH to nSi critical. Methods for SBH reduction, and their underlying mechanisms, are studied. Accurate cryogenic CV measurements were used to extract SBH. We show that chalcogenide...
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