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We present our recent work on high speed silicon optical modulators developed within the UK silicon photonics and HELIOS projects. Examples of their integration with other photonic and electronic elements are also presented.
Large-scale optical phased arrays containing up to 64×64 nanoantennas are demonstrated on silicon photonic platform, representing the largest scale demonstrated to date. Active phase tuning is also realized for dynamic pattern generation.
Silicon modulators are maturing and it is anticipated that they are going to substitute state-of-the art modulators. We review current silicon modulator approaches and then discuss the silicon-organic hybrid (SOH) approach in more detail. The SOH approach has recently enabled the operation with an energy consumption of 60 fJ/bit and demonstrated the generation of up to 112 Gbit/s per polarization...
In this paper we address the potential of metallic metamaterials in guided wave configurations to explore the possibility of their use for transformation optics applications in the near-infrared domain (λ = 1.5 µm). The experimentally investigated hybrid metamaterial structure is made of 2D array of 200×50×50 nm gold cut wires located on the top of high index silicon on insulator (SOI) waveguide....
It is shown that dipolar coupling between neighboring quantum dots enhances the absorption of light in close packed monolayers of colloidal quantum dots. Based on this concept, the experimentally determined losses in planarized waveguides coated by a quantum dot monolayer can be successfully simulated. These simulations rely on replacing the quantum dot layer by an effective medium with a dielectric...
Recent explosion of high-bandwidth applications and scientific collaboration has expedited the need for scheduled transmission of data to multiple scientific sites around the world. Advance reservations (AR) promote efficient bandwidth utilization, particularly when demands are high. The collaborative nature of modern science calls for more flexible point-to-multipoint distribution paradigms, such...
In the paper, Coupled-resonator-induced-transparency (CRIT) phenomenon in a novel integrated on-chip optical resonator system is experimentally demonstrated. The system is composed of a four-ring resonator with 20um diameter on silicon, whose spectrum has a narrow transparency peak with low group velocity. The CRIT effect is observed in the optical coupled-resonator due to the classical destructive...
We will review the progress and impact of photonic integration, and address the progress, challenges, and future prospects of photonic-electronic integration in future information systems. Technologies include silicon CMOS photonics and InP, GaAs OEICs.
We characterize microring modulators under consecutive data patterns and find significant power penalties when long sequences of zeros and ones are introduced. The penalty is greater for injection mode devices compared to depletion mode devices.
A digitally tunable optical power control loop with dynamic range >25dB is designed to compensate losses in large port count multi-stage switch fabrics. At 10 Gb/s with 7.7dBm of input power, the BER is 6.95×10-12.
A guided-wave silicon optical bench with monolithic 45˚ micro-reflector for 3-D integrated optical interconnect is experimentally demonstrated. Optical coupling-efficiency between VCSEL and PIN PD is −1.74dB with 10mA bias, and detector current is 1.22mA.
High Near-IR response photo-diode (0.1A/W@800nm) and high efficiency a-Si/a-SiGe tandem solar cell (8.38%) were demonstrated using high-density plasmafabricated a-SiGe:H deposition technology with Si2H6 and GeH4 precursor. The low temperature (140°C) a-SiGe:H films with low defect density (2.3×1016cm−3)are suitable for the applications of flexible solar self-powered multi-functional panel and 3D stacked...
A method was provided for treating the optical response of Si/Ge superlattices (SL) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SL which were grown on silicon (Si) wafers having <111> crystallographic orientation. The results of the SE analysis between 1.2 eV and 5.2 eV indicate...
A good justification for gallium nitride on silicone is the potential for integrated optoelectronic circuits and for the low cost bring by growth of GaN on a large size wafers. Actually, the application interest for GaN/Si is power electronics. This work focused on the optimization of the growth process for GaN/Si and the relation between the structure and the optical properties. Using the guided...
Power Electronics in grid interfaces, whether for generation, transformation, or utilization of power offer many benefits over today's electromagnetic and electromechanical interfaces. Power electronic grid technologies promise precise control, and speed of control, of grid voltage and currents, including fault currents. The challenges/obstacles are primarily cost, reliability, ruggedness and efficiency...
We have compared a number of well known plasmonic guides in terms of power confinement, normalized power density, and propagation loss. We have identified the relative advantages and limitations of these guides.
A hybrid silicon laser with an on-chip optical phased array for 1D beam steering across a 12° field of view is demonstrated. The device achieved 7 dB background suppression and 1.8° × 0.6° beam width.
In this paper we discuss integration technologies for next generation broadband optical access networks, in the context of different passive optical network architectures and the role they play to alleviate various technical and economic hurdles.
We report on the demonstration of an integrated 4×25 Gb/s parallel optical transceiver built in Luxtera's CMOS photonics platform, and discuss how we can scale this platform to even higher data rates.
We report on several multi-project wafer (MPW) platforms for optoelectronic systems, which support monolithic integration of modulators and detectors at 25 Gb/s or higher. We also describe the Luxtera platform, which includes CMOS integration.
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