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This paper presents our recent works on the silicon photonics based switching technology, the key to scale the emerging flexible network technologies for saving cost and energy as well as enhancing capacity of ICT infrastructures.
We report 100-Gb/s DP-QPSK pICR module that employs a Si photonics chip with polarization beam splitters. We achieved a Q-value of 12 dB at signal input power of −10 dBm with optical signal to noise ratio of 18 dB.
A novel ultra-broadband spectral beam combiner is designed and demonstrated spanning greater than four octaves from ultraviolet to mid-wave infrared bands with low M squared output.
A cyclic arrayed waveguide grating (AWG) router based on silicon nanowire waveguides with uniform channel insertion loss is designed and experimentally demonstrated. Different from conventional design, the directions of arrayed waveguides are no longer pointed to the central output waveguide, but are adjusted according to a distribution function. The experimental results show that the channel insertion...
This paper describes recent progress in silicon photonics integration technology and related developments in optical communications and other applications. A new design concept for integrated photonic circuits and an application for tera-hertz generation are discussed.
A Si waveguide optical isolator is integrated with an asymmetrical slit Si waveguide TE-TM mode converter. A maximum isolation of 26.7 dB is demonstrated at a wavelength of 1553 nm for TE mode input light.
Hybrid organic-silicon solar cells are promising candidates for next-generation photovoltaics due to their low fabrication cost and scalable roll-to-roll processes. However, the power conversion efficiency (PCE) cannot compete with those of traditional silicon solar cells yet mostly due to surface reflection and interface recombination losses. In this work, we investigate the sidewall profile and...
In this paper, we present recent research on silicon nanowires for ultra-fast and ultra-broadband optical signal processing at DTU Fotonik. The advantages and limitations of using silicon nanowires for optical signal processing are revealed through experimental demonstrations of various optical signal processing.
With the help of the strong nonlinear optical response in silicon nanophotonic wire waveguides complex sources and devices can be integrated on a chip. We demonstrate mid-infrared wavelength translators and frequency combs Furthermore, we open up the possibility for the integration of nonlinear optical functions at telecom wavelengths by exploiting more exotic nonlinear interactions in silicon waveguides...
A multi-channel hybrid integrated light source with laser diode (LD) arrays on a silicon waveguide platform was developed. The configuration of the light source was optimized to minimize power consumption by considering of the thermal interference between the channels in an LD array and also between the LD array chips. On the basis of the optimization, an over-1000-channel light source was demonstrated...
Nowadays, there is a need to integrate in a single silicon chip all the components to have an integrated optoelectronic circuit. In this paper, a design and computational simulation that demonstrate that feasibility of coupling a rib type optical waveguide with a photodiode on silicon substrate is carried out. The final goal is to have an integrated silicon circuit with a light source, an optical...
The optical properties of Ni doped 3C-SiC, with different concentrations, were studied by using the full potential linearized augmented plane wave (FP-LAPW) method with the generalized gradient approximation (GGA) and GGA Modified Becke Johnson (GGA-mBJ) within Wien2k package. The obtained results within GGA-mBJ approximation are in good agreement with experimental data. The electrical conductivity...
In nonparametric complex spectral estimation, higher resolution is achieved when the covariance matrix is allowed to be rank-deficient. Several approaches are applied to remedy matrix singularity, such as diagonal loading, rank reduction and additional constraints. Conventional solution of the optimal Capon filter is derived from the gradient functions of the constraint minimization problem, and calculated...
We present what to our best knowledge is the first forward operating silicon light-emitting diode (LED) in fin-FET technology. The results show near-infrared (NIR) emission around 1100 nm caused by band-to-band light emission in the silicon which is uniformly distributed across the lowly doped active light-emitting area. We also propose further improvements to exploit the full potential of this structure.
We demonstrated athermal silicon optical interposers integrated with quantum dot lasers at 1.3 μm, achieving a bandwidth density of 15 Tbps/cm2 with a channel line rate of 12.5 Gbps operating up to 125 °C without any bias adjustment.
We report an in-phase/quadrature modulator with on-chip optical equalizer in a silicon photonic circuit, capable of generating 56-Gbaud quadrature-phase-shift-keyed signals. The equalizer provides a 2.5-dB improvement in optical signal-to-noise ratio at bit-error ratio of 2.4×10−2.
This paper reports a theoretical and experimental study on induced strain in silicon-based rib structures. Simulations of induced stress and strain distribution were performed for nitride-strained silicon; moreover, locally-accurate strain measurements were performed on manufactured rib structures in proximity of the nitride-to-silicon interface employing the Convergent Beam Electron Diffraction (CBED)...
The coupling efficiency of a surface grating coupler is optimized for a an arbitrary buried oxide thickness by adjusting the grating radiation angle. The coupler is apodized using a subwavelength structure, allowing a single etch step fabrication. The measured coupling loss is −2.16dB with 3dB bandwidth of 64nm, for a minimum feature size of 100nm. It is also shown by simulations that by implementing...
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