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Silicon Carbide (SiC) diodes are already commercially available since 15 years and have gained significant market share in power supply and solar converter applications. In the last few years, the SiC device family was enriched by switches. They become increasingly more important for differentiation of power converters in size, weight and/or efficiency. The dedicated material properties of SiC enable...
For the first time, WS2-based transistors have been successfully integrated in a 300 mm pilot line using production tools. The 2D material was deposited using either area selective chemical vapor deposition (CVD) or atomic layer deposition (ALD). No material transfer was required. The major integration challenges are the limited adhesion and the fragility of the few-monolayer 2D material. These issues...
This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET concept. The most prominent difficulties being identified are related to the properties of the channel and the gate dielectric as well as their interface. Different approaches to realize a SiC MOSFET are briefly discussed and the CoolSiC™ MOSFET concept...
Conventional silicon (Si) based power devices are commonly used in industrial battery charging applications. In most cases, fast switching operation is desired in such applications in order to have a compact power converter system in terms of size and weight, while in contrast, it drives for large switching losses. The maturity of wide bandgap (WBG) technology provides enormous opportunities to ameliorate...
A hybrid switch configured by silicon insulated gate bipolar transistor (Si IGBT) and silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) have been investigated to be a cost effectiveness and high efficiency. In this paper, we aimed reducing the hybrid switch loss and expanding operation area of frequency and current. We measured dependency on various parameters to analyze...
When supporting commercial or defense systems, a perennial challenge is providing effective test and diagnosis strategies to minimize downtime, thereby maximizing system availability. Potentially one of the most effective ways to maximize downtime is to be able to detect and isolate as many faults in a system at one time as possible. This is referred to as the "multiple-fault diagnosis"...
An analysis of the failure modes due to short circuit on planar and trench 1200ν — 40mΩ SiC-MOSFETs is presented, including single and multiple events. Short circuit waveforms, energy, as well as electro-thermal simulations are presented, enabling the identification of the main root causes of failure. Results demonstrate similar performance regarding failure after turn-off (thermal runaway, gate)...
The performance of a Modular Multilevel Converter (MMC) is presented in this paper, comparing Silicon (Si) and Gallium Nitride (GaN) semiconductors. Moreover, the benefits of high-frequency operation in a MMC topology are analysed along with a power loss distribution evaluation, highlighting the main advantages and drawbacks of different semiconductor technologies.
In recent years, the advent of Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) rank as one of the most significant development in power electronics. Its ability to work at high-voltage and high-frequency make MOSFETs become the most important electronic device for many power system circuit. For harsh environment application in example the satellite system, requires the MOSFETs dealing...
In this paper, we explain the THz detection mechanism in sub-threshold Si MOSFETs by exploiting the exponential dependence of channel electron density to the gate-source voltage. According to our theory, this high frequency non-linear dependence is the underlying mechanism for rectification of THz radiation. The maximum detection frequency is limited by dielectric relaxation time of the electrons...
This paper makes a comparison between various quasi-delay-insensitive (QDI) asynchronous ripple carry adders (RCAs) realized using a delay-insensitive dual-rail code which correspond to 4-phase return-to-zero (RTZ) and 4-phase return-to-one (RTO) handshaking. The QDI RCAs considered are 32-bits in size and correspond to a variety of timing regimes viz. strong-indication, weak-indication, early output,...
The unique monoatomic structure of graphene makes it as an enticing material to be used in sensitive detection of analytes in biosensing applications. Implementation of graphene as a conducting channel in graphene based field effect transistor (GFET) allows ultrasensitive detection of analytes in a targeted sample. Herein, we have investigated the transfer characteristics of GFET for biosensing applications...
Silicon co-implantation into PMOS FinFET fabrication is presented. The co-implantation method is applied at the source and drain to enhance transportation properties of the devices. The device is fabricated using an industry oriented tool, Sentaurus TCAD. Performance assessment is performed on two electrical parameters, which are threshold voltage and driving current. The simulation results show that...
A 3-Dimensional (3D) strained Silicon Nanowire MOSFET simulation and inversion charge model are presented. The simulation studies are conducted based on electrical parameters of nanowires such as current and threshold voltage using a ATLAS TCAD simulator. The inversion charge model with Germanium fraction is formulated using a unified charge model. These characterization studies are performed to investigate...
In this paper, we propose a Si/GaAs based dopingless heterostructure TFET (DHTFET). Instead of using silicon-drain as in conventional dopingless TFET, GaAs is used to replace the drain region. Using charge plasma concept, source and drain regions are obtained on intrinsically doped Si/GaAs body. With the help of 2D simulation study, we report that the proposed Si/GaAs DHTFET exhibits full ambipolar...
In this work, the viability of different materials as the source region of a Double-Gate Tunnel FET (DG-TFETs) has been studied. The study essentially focuses on obtaining superior current switching ratio (ION/IOFF), threshold voltage (Vth) and subthreshold swing (SS) in DG-TFETs. In this regard, a comparative analysis of electrical and analog parameters of DG-TFETs with Silicon (Si), Germanium (Ge)...
Zynq System-on-Chip (SoC) integrates both Processor and Programmable Logic architectures, where the whole functionality of a system is placed on a single chip. Due to the advancement of process technology, the complexity of circuit analysis becomes harder and the failure modes are becoming marginal, e.g., leakage in nano-ampere range. SoC devices require very challenging work for failure localization...
This paper discussed the applications of electron energy loss spectroscopy (EELS) for element characterization in semiconductor manufacturing. The first experiment compared the ability of element chemical states analysis between EELS and X-ray photoelectron spectroscopy (XPS). Some phase change random access memory (PcRAM) product suffered TiN connection electrode failure. EELS and XPS were used separately...
Aging and soft errors have become the two most critical reliability issues for nano-scale CMOS circuit. First, in this paper, the aging effect due to bias temperature instability (BTI) is analyzed on different logic gate using 45nm Technology, and simulated the critical charge and delay which can influence soft error rate (SER) result. Second, a method of SER calculation considering BTI effect is...
Vacuum micro/nano electronic devices possess merits of radiation hardness, temperature tolerance, high working frequency and output power. It's regarded as the promising candidates for the application on ultra-high speed transistor [1, 2], portable and fast-switch X-ray source [3], free electron laser [4], field emission display [5] and so on. In the developing of modern vacuum electronic, to achieve...
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