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Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1×1019cm−3. Quality factors of ∼10-MHz Lamé mode...
The gate module comprises arguably some of the most critical process steps in 28nm semiconductor device manufacturing. One key step involved is the final gates etch. Typically all chip manufacturers dedicate a large part of their metrology capacity to the control of related device-limiting process steps. Most importantly the gate length at the bottom of the polysilicon line needs to be controlled...
In industrial processes, as well as in many other fields from vehicles to healthcare, temperature and pressure are the most common parameters to be measured and monitored. Silicon microelectromechanical (MEMS) piezoresistive pressure sensors are the first and the most successful MEMS sensors, widely used in the industry in various measurement configurations. The inherent temperature dependence of...
Strategies for bio-integrated electronics must overcome challenges associated with the mismatch between the hard, planar surfaces of brittle semiconductor wafers and the soft, curvilinear tissues of timely dynamic biological systems. This paper discusses the successful structural design, fabrication and bio-integration of tissue-like electronics that can intimately conform to biological tissues and...
The introduction of 3D devices and new materials at sub 28 nm nodes presents challenges for within-wafer and wafer-to-wafer CMP thickness uniformity control that are critical for device yield and performance. Upon CMP the typical thin film uniformity across the whole wafer is unable to meet the target of less than 2 nm 3σ variation. Furthermore, wafer-to-wafer uniformity variation requires a wafer...
In the present paper, a chip with a Pt-based RTD that functions as a heater and sensor is tested under serial power loads, and infrared (IR) thermal imaging system is adopted to obtain the thermal measurement. Comparisons of the hotspot temperatures of the chip obtained by RTD and IR methods have been made, where different surfaces of the chip were observed by the IR camera. Combing with the heat...
In this paper, lightweight heat sinks based on carbon nanotubes (CNTs) are presented. CNTs were attached on the surface of silicon chips and their heat dissipation performance were monitored. As the morphology of heat sinks is an important factor for the heat dissipation efficiency, two types of CNTs, CNT arrays and sponge CNTs, were used here. Besides, the influence of airflow on the two kinds of...
An atmosphere pressure sensor is developed using SOI (silicon on insulator) wafer based on MEMS technology. In this sensor, the device layer of SOI wafer is etched as the stress detection resistor. And the depth of pressure cavity is controlled by wet etching time. The whole chip is finished by anodic bonding with SOI wafer and pyrex 7740 glass wafer. Also, a kind of plastic packaging for pressure...
We present a temperature compensation system for silicon piezoresistive pressure sensor based on neural network. This system can be used for measuring the pressure of various media. And the design can simplify the implementing hardware of pressure measurement system. Compared with traditional design, it can output three signals: current signal, digital signal based on RS485 and Zigbee wireless signal,...
High temperature is one of the limiting factors and major concerns in 3D-chip integration. In this paper we use a 3D test chip (WIDEIO DRAM on top of a logic die) equipped with temperature sensors and heaters to explore thermal effects. We correlated real temperature measurements with the power dissipated by the heaters using model learning techniques. The resulting compact thermal model is able to...
The dependence of the activation energy on the electric field is investigated in extensionless (underlap) UTBOX FDSOI applied as a single transistor floating body RAM. It was found that with the same gate stack it is possible to extract two different activation energies when the electric field in the hold condition is different. Higher barrier lowering induced by elevated electric field implies in...
A model for the electrical behavior of pn-junction diodes biased in forward direction and used as a temperature sensitive device (TSD) in microbolometers is presented. It is based on the well-known Shockley equation extended by the ideality factor m. We demonstrate that the largest temperature sensitivity can be reached for diodes at low current density operation featuring a high ideality factor m...
A fabrication process for a thermo-diode microbolometer array is presented. The process is based on a sintered porous silicon (sPS) technique adopted from Chipfilm™ technology to enable vertical thermal insulation of the pixels. In addition, the process offers the possibility to have more than one diode per pixel connected in series. It is demonstrated that this boosts the temperature sensitivity...
In order to effectively applied mechanical properties of polysilicon and piezoresistive properties of polysilicon Nano-films to pressure sensors, the sacrificial layer pressure sensor with polysilicon Nano-film piezoresistors and polysilicon diaphragm is designed and developed. The sensor structure is designed by finite element software. The cavity height is determined for overload protection. The...
Micro electromechanical system (MEMS) is an emerging technology that gives high accuracy and high speed with least error due to the micro dimension. To design a simple but accurate MEMS sensors remains a challenge. Modeling of a MEMS temperature sensor, using simple microcantilever structure, is represented in this paper. The sensor is actuated electrostatically. The effect of temperature on the resonance...
A compact all-silicon Mach-Zehnder interferometer (MZI) filter with temperature sensitivity less than 5pm/ K is demonstrated. The device achieves a reduced footprint by making use of different polarizations.
The MEMS Si thermal convective inclinometer without solid proof mass has many advantages such as more robust and immune to vibration shocks compared with traditional inclinometer. In this paper, a 3D parametric model of this kind of inclinometer has been setup. The influences of different airflow velocity under high environmental temperature have also been considered to study how they affect the sensitivity...
Silicon pyranometer has wider application in radiation observation and solar energy resources evaluation because of its fast response time, small size, low price and identical spectral range with photovoltaic cells. In order to guarantee the accuracy and the reliability of the observation data, various performances of silicon pyranometer are tested according to its specification. The sensitivity is...
A comprehensive investigation of silicon microring sensor, which is used for temperature detection, is reported in this paper, and the theory was introduced in detail. Numerical analysis shows that the silicon microring has a high sensitivity and a very good linearity between real-time temperature and effective index. By optimizing the parameters, the microring sensor can obtain a higher sensitivity...
In this paper, intermediate-sized porous silicon (PS) sensing material was prepared via galvanostatic electrochemical anodization technique in a Teflon double-tank cell configuration. Then, tungsten oxide (WO3) thin films were deposited onto the PS surface by using DC reactive magnetron sputtering method. The morphology of PS and WO3/PS were observed by field emission scanning electron microscope...
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