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We demonstrate how CMOS compatible photonic molecules (PM) can break the fundamental interdependence among quality factor (Q), channel spacing and size of microring resonators. Different PM architectures are presented for efficient and compact optical signal processing.
We report the first observation of a hypersonic mode of a small-core silicon wire. In particular, we achieve record 4.4 dB on/off continuous-wave Brillouin gain at 1550 nm. The wire is supported by a tiny oxide pillar to block the path for external phonon leakage.
We review our recent work showing that Si and InP Mach-Zehnder modulators can have similar performance, while the first offer the advantage of monolithic integration with electronics. Development status of modulators in photonic BiCMOS is presented.
In this paper, we target at cognitively detecting the presence of the primary user (PU) as well as recognizing PU's signal modulation. Since the existing modulation classification methods rely on fixed sensing period which may waste time when the modulations are easier to distinguish, we propose an automatic modulation classification (AMC) approach using likelihood-based (LB) and feature- based (FB)...
We investigate the ability of the physical layer approaches of constellation shaping and forward error correction to enhance the performance of full duplex (FD) wireless radio systems. We use low density parity check and optimized shaping codes to transmit non-equiprobable constellation points from an amplitude phase shift keying modulation with imperfect power amplifier and in the presence of FD...
CMOS compatible photonic integrated circuits have gained great attentions in short haul interconnects applications because of the promises to tackle the issues of traditional copper interconnects. Towards the monolithic integration of electronics and photonics, lots of efforts have been made to decrease the device footprint by using surface plasmon polaritons (SPPs), in order to enhance performances...
An isolated bi-directional soft-switched DC-AC converter with high-frequency-AC (HFAC) link using Silicon Carbide (SiC) MOSFETs is presented in this paper. A unipolar-SPWM oriented modulation technique is proposed to enable the full-bridge (FB) stage to realize zero-voltage-switching (ZVS) and the cycloconverter stage to realize zero-current-switching (ZCS). Furthermore, the proposed modulation technique...
Based on the cascade of cyclic shift versions of complementary pairs, a new set of mutually orthogonal sequence pairs with the center element of each sequence equal to zero is constructed. Compared with traditional complementary sequences, the constructed mutually orthogonal sequence pairs will be more suitable for orthogonal frequency division multiplexing (OFDM) systems when the zero element in...
We propose a novel low-power CMOS circuit to monitor the optical modulation amplitude of a Si ring modulator, and successfully demonstrate its operation in a wire-bond integrated CMOS Si photonic ring transmitter.
We demonstrate an ultra-broadband all-optical terahertz modulator based on a semiconductor-integrated hybrid metamaterial. Under photoexcitation using near-infrared laser pulses, the semiconductor regions become highly conducting, causing a transition of the metamaterial from an array of dipole patch grid to a metal wire grating. This transition exhibits dramatically different transmission properties...
We demonstrate a low cost tunable transmitter based on a directly modulated hybrid III-V/Si laser with enhanced modulation bandwidth. We successfully achieve 21.4 Gbit/s direct modulation including FEC overhead on 12 wavelengths over a short-reach access link (10-km).
We successfully reduce the operating energy of a DFB laser for use in datacom applications. Since the optical confinement factor is increased by integrating the device on SiO2/Si substrate, the device exhibits 171-fJ/bit energy cost when modulating 25.8-Gbit/s NRZ signal.
In order to speed up inherently slow diffusion-based molecular communication method, in this paper, we propose a hybrid modulation scheme employing two baseline modulation schemes, namely concentration shift keying and molecular shift keying. Furthermore, we also present two design alternatives to implement the proposed scheme. The main objective of the proposed hybrid modulation scheme is to improve...
We review the development status of device integration in photonic BiCMOS technology. Basic photonic device performance and results of a first fully-integrated technology learning cycle shall be presented.
We report 40Gbit/s ring resonator based silicon modulator fabricated on 300mm SOI wafers, with a comparison between theoretical and experimental performances.
We report a method of engineering constant composition, single crystal, defect free SiGe-on-insulator grown by a rapid melt growth technique using tailored tree-like structures. Branches emanating from the main SiGe strip act as Silicon “reservoirs” to prevent the usual gradation of the alloy composition. This technique enables multiple SiGe strips to be grown using the same single generic Ge deposition...
We implement and verify Si micro-ring modulator (MRM) behavioral model based on the dynamic coupled-mode theory. We also perform circuit-level simulation of the entire Si photonic transmitter including the driver electronics and the Si MRM.
We present a design of an optimized CMOS-compatible germanium-on-silicon Franz-Keldysh effect plasmonic modulator. Its length is below 30 μm and the modulator operates at −3V. It features a power consumption as low as 20 fJ/bit.
The Si quantum dot doped SiOx waveguide based free-carrier absorption modulator with enhanced modulation depth from 52.5% to 63.5% is demonstrated by adding a ring resonator and inducing the electron-hole plasma to cause a resonance shift in the ring.
Investigation of readout electronic dedicated to electromechanical audio sensor is presented. The circuit is able of reading piezoresistive gauge implemented with silicon nanowire (NEMS) and bring electromechanical signal to high-resolution digital output. Low-noise low-power CMOS operational transconductance amplifier (OTA) is presented. The low-noise amplifier (LNA) has been designed in a 0.28 μm...
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