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In order to prevent collision of the train movement or derailment, Automatic train protection (ATP) is needed as an important part of signaling system. Conventionally, a transponder or electro-magnet is used for communication between trackside device and onboard device of the ATP. ATP is not applied yet in Indonesia till now and all trains are operated by driver. So, ATP is become a necessity to protect...
A silicon microring resonator-loaded Mach-Zehnder modulator with an interleaved PN junction is fabricated and its static modulation characteristics are investigated. The halfwave voltage and phase shifter length is markedly reduced by incorporating the phase shift enhancement effect in the microring resonator and the interleaved PN junction.
Modern telecommunication systems are piqued for/by high data rate to improve reception quality. High data rate can be, naively, achieved using increased bandwidth. Since bandwidth is a limited resource, we study a method of maximizing system performance by improving data rate of communication systems via diversity gain. This followed from multiple input multiple output (MIMO) scheme provided by space-time...
In this paper, the terahertz (THz) detection based on Silicon MOSFET is investigated with two-dimensional (2D) ensemble Monte Carlo (MC) simulation study. The analytical model of responsivity to high frequency small signals based on the small-signal equivalent circuit of MOSFETs operating in terahertz detection mode are developed and calibrated. We explore the impacts of input excitation signals with...
Interface morphology dependent Schottky Barrier Height (SBH) and its modulation by substitutional dopants in NiSi2/Si interface have been investigated using density functional theory. An accurate band gap of Si was estimated by employing meta-GGA exchange correlation functional. We show that the SBH for electrons (in n-type semiconductor) is significantly lower for (001) than (111) orientation of...
We report for the first time the 28 Gb/s direct modulation of heterogeneously integrated III-V-on_Silicon DFB laser. Transmission experiments using 1km of standard single mode fiber were also performed and gave a 4.3 dB penalty at a bitrate of 25 Gb/s.
This paper focuses on two-way relaying (TWR) system, where two source nodes exchange information with each other simultaneously via the relay node. We proposes a denoise-and-forward two-way relaying (DNF-TWR) scheme using non-coherent multiple differential phase-shift keying (M-DPSK) modulation when the channel state information (CSI) is unknown. Firstly, we design the denoising mapping function at...
High speed and low power transmission on optical interconnections can be achieved using ring-based optical modulators. 3D-integration of the ring modulator on top of the driver chip allows compact and cheap transmitters. 4-PAM modulation is considered for the first time for a high data rate.This paper presents a 10 Gb/s ring modulator driver with high and adjustable swing. The circuit is designed...
We study the process variability impact of silicon ring modulators on resonance wavelength, which is a key parameter to design WDM communication systems based on those devices.
Electrical tunability of saturable absorption is demonstrated in a graphene/SOI hybrid waveguide. The saturation modulation depth is tunable between 0 and 2.2 dB (∼0–40% decrease of absorption at saturation), with saturation powers between ∼1.25–2.5 W.
We demonstrate a five-channel wavelength division multiplexed modulator module that heterogeneously integrates a 1.6nm channel-spacing arrayed-waveguide grating and a 20Gbps electroabsorption modulator array, showing the potential for 100 Gbps capacity on a 1.5×0.5 mm2 footprint.
Fabrication and characterization of optical leaky wave antennas with dielectric waveguides and semiconductor perturbations is presented. Directive radiation at 1550nm is measured. Detailed study on electrical modulation capability with bandwidth exceeding 75GHz is presented.
Silicon photonics devices based on Ge/SiGe structures are promising. However their integration with silicon on insulator waveguides is a challenging point. We present an innovative approach to monolithically integrate low-voltage, broadband photonic interconnection on silicon.
We design and characterize asymmetric Bragg gratings in waveguides which possess multiple reflected wavelengths. We experimentally demonstrate devices with two independent stopbands, then use finite-difference time domain software to characterize more complex grating designs.
We fabricated a WDM transmitter consisting of Si photonic crystal MZ modulators, triangular-shaped coupled-microring multiplexers and optical switches. 25 Gbps/ch operation and hitless switching of channel wavelength were successfully obtained.
Free-standing thin-film flexible Si1−xGex saturable absorber with Si/Ge composition-ratio dependent saturable absorbance is demonstrated to passively mode-lock the erbium-doped fiber laser for delivering a pulsewidth of 330 fs at a modulation depth of 16%.
Ge/SiGe Quantum well structures have a strong potential to revolutionize silicon photonics. This paper review recent works including high speed modulator and photndetector, electro-refraction, QYV engineering to tune the wavelength and waveguide integration.
A novel scheme of an optically sampled, electronically quantized wavelength-demultiplexed analog-to-digital converter is proposed. The scheme is simple, energy efficient, tolerant to optical crosstalk, and fully suitable for integration on a silicon photonic chip.
In this paper, a novel self-interference (SI) cancellation scheme operated in the digital domain is proposed for the full duplex (FD) system configured with two antennas. The basic idea of our scheme is to transfer the strong SI to the inter-symbol interference (ISI), which is easier to cope with, through a combination of the signals received in successive time slots based on the assumptions that...
We demonstrate that graphene-based inverted rib-type silicon waveguides can be used as absorption modulators. Simulation shows that the modulation depth of such a modulator is larger than those of previous graphene-based silicon waveguide modulators.
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