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Sensitivity of Phosphorus dopant placement to the channel size of highly doped silicon nanowires is studied using a 10-band sp3 d5 s∗ tight-binding approach coupled to self-consistent simulations. Extending the simulation scope to realistically sized nanowires, we observed that uniform doping does not necessarily reduce the channel energy compared to surface-oriented doping when the diameter of a...
Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content [1]. This feature can be exploited for highperformance tunnel FET (TFET) application [2], [3]. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a high on-current. In order to reduce...
We report a milestone in device modeling whereby a planar MOSFET with extremely thin silicon on insulator channel is simulated at the atomic level, including significant parts of the gate and buried oxides explicitly in the simulation domain, in ab initio fashion, i.e without material or geometrical parameters. We use the density-functional-based tight-binding formalism for constructing the device...
The Ge/Ge0.94Sn0.06/Ge double heterostructure, grown on a Si substrate was fabricated into a p-i-n photodiode. The dark I-V characteristics and 1.4–2.2 μm spectral response were measured for comparison with other on Si infrared detectors.
We report results of a parametric study performed on a capacitive silicon modulator. The trade-off between modulation efficiency, optical losses and modulator speed was analysed.
In recent years, tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of optoelectronic devices that are compatible with the mainstream silicon technology. Compared to Si, pure Ge displays unique optical properties, the direct (Γ) valley of its conduction band is only 140 meV above the indirect (L) valleys at room temperature while it is larger than 2000 meVin Si...
Tensile-strained, n-doped germanium-on-insulator (GOI) substrates with doping concentration up to 1.0×1020 cm−3 are fabricated by wafer bonding and spin-on-dopant. Resonant photoluminescence peaks corresponding to whispering gallery modes are obtained from microdisks fabricated on GOI at room-temperature.
This work describes a non-destructive method to introduce impurity atoms into silicon (Si) and germanium (Ge) using Molecular Layer Doping (MLD). Molecules containing dopant atoms (arsenic) were designed, synthesized and chemically bound in self-limiting monolayers to the semiconductor surface. Subsequent annealing enabled diffusion of the dopant atom into the substrate. Material characterization...
Comprehensive studies on random telegraph signal (RTS) noise have been done to understand carrier trapping processes, with a main focus on the large variations of time constants. It is observed that time constant distributions, as well as thermal activation energy distributions, weakly depend on the substrate doping concentrations or surface orientations. For individual traps, time constants are quite...
An STI-last integration scheme was successfully developed to fabricate low-defectivity and dopant-controlled SiGe SRB / sGe Fins. For the first time, 15 nm fin-width SiGe SRB/highly-strained Ge pFinFETs are demonstrated down to 35 nm gate length. With a CETINV-normalized GM,SAT,INT of 6.7 nm.mS/µm, the Si0.3Ge0.7 / sGe pFinFETs presented in this work improve the performance by ∲90% as compared to...
The electron spin properties in semiconductors are of great interest because of their potential in future spin-driven microelectronic devices. We performed simulations on electron spin injection in an n-doped silicon bar from a magnetic semiconductor with spin-dependent conductivity. A variation of doping can introduce charge accumulation/depletion layer at the interface. We found substantial spin...
This paper discusses the breakdown voltage (BVDSS) characteristics of an n-channel charge balanced shielded gate trench power MOSFET. The study emphasizes on elements that affect the BVDSS stability of such devices to gain good control on design and process/device parameters in order to produce a robust product. Breakdown voltage (BVDSS) walk-in or walk-out can be observed when certain process (e...
This paper presents MOSFET implant failure analysis using plane view scanning capacitance microscopy (PVSCM) at silicon substrate level. Failing transistors are characterized by nano-probing (NP) at contact level. The cause of failure was deduced from the combination of PVSCM, IV characteristics from NP measurement, and TEM cross-section analysis. Technology computer aided design (TCAD) simulation...
We demonstrate a 300mm wafer scale conformal contact process to achieve uniform ultra-low specific contact resistivity (ρc) for metal/high-k/n+Si (MIS) contacts. To achieve conformal contacts, we use a sidewall TLM (STLM) test structure that helps to minimize current crowding effect and variability. A systematic study is provided by varying doping density (ND), high-k material (LaOx, ZrOx and TiOx...
We have demonstrated that by material engineering using different spices to dope HfO2, RRAM cell switching and endurance / retention reliability characteristics can be modulated. The changes in SET/RESET voltages, endurance optimal programming window and retention result mainly from the oxygen scavenging efficiency of Hf cap in presence of different dopants in HfO2. This impacts directly the formation...
The conduction-type dependent thermal oxidation rate in SiC was discovered. The oxidation was performed for SiC(0001) with nitrogen doping (n-type) in the range from 2.0×1016 cm−3 to 1.0×1019 cm−3, and aluminum doping (p-type) in the range from 2.0×1015 cm−3 to 1.0×1019 cm−3, exhibiting a clear dependence. For n-type SiC the oxide thickness increases for higher doping density, and for p-type the thickness...
Effect of degenerate doping on the long term stability and quality factors of silicon resonators was studied. The long term stability of electrostatically coupled tuning fork and width extensional mode resonators was found to be better than 1 ppm during a measurement spanning 220 days. Resonators were phosphorus doped to a carrier concentration of 4.1×1019cm−3. Quality factors of ∼10-MHz Lamé mode...
Polycrystalline silicon thin-film transistors (p-TFTs) can significantly be improved in terms of their performance with the bridged grain structure (BG TFTs) by forming lines with higher doping concentration (5×1015–1016 cm−3) across the active channel, equally spaced at a distance close to the average grain size.
This paper reviews the experimental state-of-the-art in access resistance reduction in Ge devices. Special attention is paid to the doping and thermal annealing state-of-the-art, highlighting in particular those techniques that have been applied to Si devices, but have not yet been properly optimised in Ge. We also look forward to emerging novel processes for access resistance reduction.
Electrical-assisted diffusion of carriers had been proposed as a new hypothesis of a major dopant deactivation kinetics. New metrology methods, including SIMS/ARXPS and CAOT/DHE methods, are used for this study and supply supporting evidences and data. N-type (P- and As-based) implants show more serious deactivation, but similar reactivation to P-type (B-based) implants, which can be interpreted by...
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