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In this paper, we designed a group of horizontal Hall sensors in 0.35 µm BCD (bipolar/CMOS/DMOS) technology. Compared with the existing Hall devices, the design has improvement in parts such as Hall cell parameter set and layout design under BCD technology. And then the Hall chip is taped out. The results from the precise experiment of the Hall cell verify the optimization method which can be used...
In this paper, the effect of silicon body thickness (TSi) and silicon body width (WSi) variation on DC characteristics in 100 nm gate length silicon-on-insulator (SOI) junctionless (JL) and junction transistors has been investigated by using numerical simulations. The digital figure-of-merits characteristics such as threshold voltage (VTH), on-current, subthreshold voltage, and drain-induced-barrier-lowering...
We report near-infrared and high-speed silicon photo-detectors capable of sub-bandgap light absorption based on the optically-assisted tunneling induced by a large electric field.
Photoluminescence intensity is studied for n-type Ge layers (∼1×1019 cm−3) grown on Si. The growth and post-growth annealing temperatures are important factors to enhance the light emission together with the concentration of n-type doping.
Irradiating a semiconductor sample with intense laser pulses in the presence of dopants drastically changes the optical, material and electronic properties of the sample. The properties of these processed semiconductors make them useful for photodetectors and, potentially, intermediate band solar cells. This talk discusses the processes that lead to doping and surface texturing, both of which increase...
In recent year, anneal process have been used ro reduce the dead layer and higher phosphorous active ratio by separating deposition and drive-in process. In this paper, two process flows are demonstrated on silicon mono-crystalline PERC cells ro investigate rhe improvement wiih anneal process. Higher minority carrier liferiine and lower emitter saturation current density are shown due to higher active...
We demonstrate the benefit of using a low work-function metal (Yb) to lower the barrier height and hence, the contact resistivity (ρc) in unpinned metal-interfacial layer-semiconductor (MIS) contacts on n-type Ge and Si. Metal/doped TiO2−x/n-Ge and n-Si MIS diodes fabricated with varying TiO2−x thickness (1–5 nm) exhibit higher (upto 100X) current densities and lower contact barrier heights (upto...
We compare through numerical simulations a Si GBHT and a SiGe HBT: the fT limit of GBHTs is predicted to be more than twice as high as for HBTs assuming a transparent graphene/Si interface; if a more realistic interface model extrapolated from existing experiments is used, the fT limit drops by about two orders of magnitude.
In a VNWA Schottky rectifier, Vbr can be raised and/or Rs,sp lowered progressively by increasing S/R. This can be interpreted in several ways: the performance of this rectifier can be improved at the cost of device area; this rectifier offers an additional degree of flexibility in terms of the device area in device design; the structure of this rectifier allows tailoring of Vbr and Rs,sp using a geometry...
The lack of high power conversion efficiency in RF passive rectifier circuits at sub-μW power levels with current MOSFET technologies is directly related with the difficulty of the transistors in conducting the required level of current at low voltage values. With a different carrier injection mechanism, the superior electrical characteristics of the Tunnel FET devices at low voltage values (sub-0...
We demonstrate an all-silicon N-P-N phototransistor integrated on a silicon waveguide. The device has a high responsivity of 10 mA/W under 5 V bias at the 1550 nm telecommunication band, larger than the all-silicon P-I-N and P-N photodetectors.
In general, the efficiency of the single-junction solar cell depends upon various design parameters such as material type, thickness of layers, doping concentrations, texturing type and thickness of the anti-reflective coating. Typically, the performance of solar cells is determined by using a one-dimensional solar cell simulation software such as PC1D. Keeping external parameters constant (one-sun,...
We investigate the effects of p a-Si:H emitter layer defects on n-type silicon heterojunction solar cells (SHJ) by experimental and simulated device analysis. Simulation of interdigitated back contact heterojunction (IBC-SHJ) solar cells shows that reducing the p-layer dangling bond density (Ddb) > 5×1018 cm−3eV−1 is an effective way to simultaneously increase VOC and FF. We use front and rear...
We proposed CO2 laser doping technique as a fabrication method of c-Si solar cell, and demonstrated its availabilities with the cell characteristics. P and B-doping with relatively high carrier density around 1020 cm−3 were realized by the CO2 laser irradiation. We found that the pulse frequency is one of the most important parameter to improve the cell performances.
Doping layers like the emitter or a surface field in silicon solar cells have to fulfill two important functions: They have to allow ohmic contact formation and they should also suppress Auger and surface recombination effects. The latter can be supported by an electrical field, provided by the layer itself. In the case of an emitter this is provided by a peak doping concentration beneath the surface,...
Si quantum dots or interchangeably Si nanocrystals are promising materials for all-Si tandem solar cells in next generation photovoltaics. Si QDs in this study were fabricated by annealing sputtered Si rich oxide/SiO2 (SRO/SiO2) bilayer superlattice thin-films. Advantages of high Si content SRO layers include lower resistivity and higher light absorption cross-sections which are more suitable for...
We report on progress made with an all-screen-printed interdigitated back contact (IBC) solar cell process. The rear side interdigitated doping pattern is defined using screen printed boron and phosphorus dopant pastes with thermal drive-in. High printing and doping fidelity as well as high wafer bulk lifetime are demonstrated. Screen printed fire-through metal pastes are also used for contacts. We...
The development of new architectures, as well as the new materials needed for < 10 nm nodes, open new challenging applications for ion implantation where PIII (or plasma doping) will have an important role to play, either for doping or for material modification.
In order to understand the reason why doping with Si in the “wells” enhanced the NBE emission efficiency, STRCL measurements and 1D-SCSP calculations were carried out on the Al0.68Ga0.32N / Al0.77Ga0.23N MQWs with different Si-doped layers. The increase in τNR, i.e decrease in the concentration of NRCs, by the Si-doping in the wells were correlated with improved lateral uniformity of the QW transition...
The 10−7 nm CMOS nodes require that ρc be reduced to < 2E-9 Ω.cm2. Fermi level for most metals is pinned at mid-gap, resulting in a challenge to decrease SBH. There are several implant solutions, such as thermal implants, that can be leveraged to benefit the FinFET doping of SDE, SD and contact module for scaled CMOS.
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