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In this paper the wide range of application of real time in situ reflectance signal observation based on four GaN on Si samples grown is shown. Mean reflectance value of oscillations for GaN growth and recovery times were extracted from reflectance traces acquired in situ. Moreover, RMS variation of grown samples were correlated with in situ monitoring that were in good agreement with presented model...
The capability to deliver stable repeatable epitaxy optimised for breakdown, current slump, uniformity and tuned to individual foundry specifications and processes is critical to a successful supply chain in GaN RF devices. In this paper we will provide an overview of the advances at IQE Europe in the development of GaN H-FET epitaxy for RF applications. The GaN epitaxy at IQE Europe is undertaken...
Silicene, an atom-thin two-dimensional sheet of silicon atoms arranged in a honeycomb lattice, recently synthesized on Ag(111), has attracted considerable interest as a potential alternative to graphene. For single layer silicene, two main phases have been identified among a few possible ones. They correspond to differently buckled silicene sheets, in coincidence either with 4×4 or Root13×Root13R(13...
Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semi-transparent platform. We show a simple release process for peeling...
We introduce an all-semiconductor platform for mid-infrared plasmonics based on epitaxial heavily-doped Ge-on-Si. We design, fabricate, and characterize plasmonic Ge antenna arrays to assess the potential of this platform for mid-infrared sensing applications.
Growth of NaCl and Fe/NaCl/Fe Magnetic tunneling junctions on Si (100) has been achieved by using a high vacuum electron-beam deposition system. Epitaxial tunnel junctions turn out to be prone to pinholes as well as electrode oxidation. Instead, the best tunneling magnetoresistance we have achieved in this system is on polycrystalline tunnel barriers with thin Mg insertion, and reaching 22.3% at room...
We demonstrate the growth of III-Sb buffers on GaAs and Silicon substrates through the use of an epitaxial technique involving the formation of interfacial misfit dislocation arrays that is formed between the III-Sb alloy and the substrate. The interfacial misfit array results in the spontaneous relaxation of the highly mismatched III-Sb semiconductor and provides a platform for the realization of...
Mesa structure Si pn junction was formed by sputter epitaxy, and its electrical characteristics was investigated. This diode exhibit an ideal factor n of 1.7–1.9 and leakage current Joff at −0.5V of 2–8 × 10−5 Acm−2. n deteriorated with increasing sputtering power P, but Joff improved with increasing P. It was explained as that at a large P defects tend to be generated at substrate surface due to...
Epitaxial stacked structure on Si substrates attracts much attention to sensors and actuator applications using functional material such as ferroelectrics, pyroelectrics and piezoelectrics since characteristics of those materials depend on crystallinity and crystal orientation. The epitaxial γ-Al2O3 films on Si substrates are suitable for above applications, which exhibit desirable features such as...
We present a comprehensive study of Si0.55Ge0.45-cladded p-channel FinFETs, including a comparison with planar SiGe quantum-well devices. The SiGe-cladded FinFETs exhibit ∼2× higher hole mobility, ∼2× better ION/IOFF, and improved DIBL compared to Si control devices. Superior NBTI reliability over equivalent Si FinFETs is demonstrated for cladding thicknesses down to 3 nm. The dependencies of drive...
In this paper, we present first demonstration of InGaAs-on-insulator (-OI) MOSFETs with wafer size scalability up to Si wafer size of 300 mm and larger by direct wafer bonding (DWB) process using InGaAs channels grown on 4-inch Si donor substrates with III–V buffer layers instead of InP donor substrates. It is found that this DWB process can provide the high quality InGaAs thin films on Si. The fabricated...
In this work, in order to investigate the effects of annealing gases on the quality of Ge epitaxially grown on Si substrate, ex-situ rapid thermal annealing (RTA) processes with different gases have been performed. The Ge-on-Si samples were prepared by different growth techniques using reduced-pressure chemical vapor deposition (RPCVD), and then, samples annealed in the N2, forming gas (FG), and O...
GaP/active-Si junctions were grown by metalorganic chemical vapor deposition via a previously developed process that yields GaP-on-Si integration free of heterovalent-related defects. N-type Si emitter layers were grown on p-type (100)-oriented Si substrates, followed by the growth of n-type GaP window layers, to form fully-active sub-cell structures compatible with integration into monolithic III-V/Si...
We present the formation of very thin and uniform Ni silicide contacts on Si and strained SiGe using multi thin Ni/Al layers. Epitaxial Ni(Al1−xSi x)2 layers are achieved on Si with a layer thickness from 14nm to 33nm. The contacts show a lower Schottky barrier than NiSi. The incorporation of a small amount of Al slightly changes the Schottky barrier compared to pure NiSi2. Using Ni/Al multilayers...
Embedded SiGe, used to boost pFET performance, is grown by selective epitaxy on silicon. Pattern density effects cause the deposited thickness to be different across different product chips under otherwise identical conditions. Since device control depends critically on thickness, we apply a pattern-density based predictive growth rate, which is used as input for the existing advanced process control...
Trench etching is an important process step for many semiconductor applications. Memory implementations, power devices and embedded capacitors benefit from lateral shrinkage of trench dimensions. But for physical reasons the depth of a trench that can be achieved for a given diameter is limited. We describe here a process with a sacrificial Silicon-Germanium (SiGe) layer on the sidewall of a trench,...
Ni(Pt)/Si-cap/SiGe solid phase reaction with various Si cap layer thickness and Ge content has been investigated in this paper. The results suggest that the Si-cap layer needs to be carefully optimized to achieve the lowest sheet resistance (Rs). The thermal stability study shows that Ge atoms out-diffusion results in the strain relaxation and the decrease of Ge content of SiGe layer even after a...
We review in this paper some key enabling process integration modules, the development of which will allow pursuing the trend of energy efficiency improvement in sub-28nm FDSOI technologies.
Through a novel methodology for evaluating layer-by-layer residual stresses in epitaxial silicon carbide films with resolution down to 10 nm, we indicate the existence of a highly compressed interfacial nano-layer between the films and their silicon substrates. This layer is consistently present underneath all types of silicon carbide films examined herein, regardless of the extent of residual tensile...
The purpose of this paper is to elucidate other applications where the low frequency component of background signal (haze) level of a wafer inspection tool can be used to qualitatively analyze different processes. During initial epitaxial development cycles a fast method of qualifying the growth runs is required. While SEM inspections can sub-sample the wafer, a semi-quantitative way of qualifying...
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