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Silicon carbide (SiC) is an emerging wide bandgap semiconductor having superior physical properties such as high critical electric field and high saturated drift velocity. Discrete high-voltage, low-loss SiC power devices such as 600–1700 V Schottky barrier diodes and FETs (MOSFETs and JFETs) have currently been developed, and small-scale production has started. SiC is also attractive for advanced...
Low-resistance lateral pin junctions for LDs on III-V CMOS photonics platform are obtained using Si implantation and Zn diffusion owing to high thermal tolerance of III-V-OI wafer, resulting in observing electro-luminescence from Inga Asp photonic-wire waveguides.
We propose a novel low-power CMOS circuit to monitor the optical modulation amplitude of a Si ring modulator, and successfully demonstrate its operation in a wire-bond integrated CMOS Si photonic ring transmitter.
An integrated-CMOS-tunable-laser with 15-dBm output power is presented. Fabrication is realized in commercial CMOS foundry. Laser shows high power, low RIN, and ultra-narrow linewidth. Performance over fiber is comparable with best-in-class, market-leading ITLA, proving suitability for long haul coherent applications.
Rigorous mathematical formulation of digital circuits, although accurate, consumes simulation time of a circuit designer who wishes to have a quick investigation of the effect of various device parameters on the electrical response of a circuit. This paper uses simple yet efficient method to calculate the average resistance of the transistors for finding the RC time constant and thereby the transient...
Fully integrated microwave IC's have been in development since the 1970s. The move in recent years to complex microwave and millimeter-wave CMOS subsystems has prompted a considerable activity which must proceed in light of past developments and discoveries. This paper offers a perspective on pre-CMOS experience with active microwave circuits on a chip, some of which operated at 60 GHz. While a market...
The beam forming at millimeter-wave for commercial standards like IEEE 802.11ad, is drawing much attention recently. Despite its advantages of high gain, beam-steering capability, and wide spatial coverage, phased-array requires power-hungry and costly multiple channels, especially in large-scale array systems. Thus, it becomes crucial to develop low power and compact circuits for the systems to be...
We demonstrate the synthesis of any arbitrary polarization state of light, spanning the full Poincare sphere, radiated by a single silicon nanoantenna with two feeding waveguides. We experimentally demonstrate the synthesis of linearly, circularly and elliptically polarized light using this method. The reciprocal scenario allows the analysis of light impinging in the nanoantenna, sorting different...
The integration of a differential antenna in mainstream 65 nm CMOS was investigated. A 60 GHz prototype integrated circuit (IC) was developed, including a seal-ring and on-chip calibration structures. Measured results show excellent impedance matching properties over a 10 GHz bandwidth and a moderate antenna gain of −1.5 dBi. However, this is still a significant improvement as compared to state-of-the-art...
For more than four decades, Complementary Metal-Oxide-Semiconductor (CMOS) Field Effect Transistors (FETs) have been the baseline technology for implementing digital computation systems. CMOS transistors natively implement Not-AND (NAND)- and Not-OR (NOR)-based logic operators. Nowadays, we observe a trend towards devices with an increased set of logic capabilities, i.e., with the ability to realize...
Epitaxial stacked structure on Si substrates attracts much attention to sensors and actuator applications using functional material such as ferroelectrics, pyroelectrics and piezoelectrics since characteristics of those materials depend on crystallinity and crystal orientation. The epitaxial γ-Al2O3 films on Si substrates are suitable for above applications, which exhibit desirable features such as...
In this work, we report on the feasibility and design optimization of impact ionization junctionless transistors for dynamic memory and bio-sensing applications. Optimization of snapback and the hysteresis effects in the output characteristics to achieve high current margin between the two reading states of a dynamic memory are presented. The optimized cell offers nearly 4 orders of difference in...
A millimeter-wave bandpass filter (BPF) using complementary split-ring resonator (CSRR) loaded quarter-mode substrate integrated waveguide (QMSIW) cavities is presented in this work. The CSRR-loaded QMSIW cavity resonates below the original QMSIW resonance frequency, which further reduces the size with respect to its SIW counterpart. The reduced quality factor Q of the cavity makes it useful for BPFs...
A high output 1dB compression up-conversion mixer for the entire E band frequency range, 71–76 GHz and 81–86 GHz, is designed and fabricated in IBM 0.13 μm SiGe technology. The mixer is comprised of a double balanced Gilbert cell and a multi-tanh three transistor hybrid transconductance stage, used to enhance the mixer linearity. The conversion gain and output 1dB compression are 3.9dB and +1dBm,...
In utilizing CMOS-MEMS resonators as mass-sensitive platforms, a uniform temperature distribution on the membrane surface is critical. In this paper, a novel design of CMOS-MEMS resonator with embedded microheater to control the temperature over the sensing layer was successfully designed and characterized. The CMOS-MEMS resonator was fabricated using 0.35 µm CMOS and post-CMOS micromachining process...
True Single-Phase Clock (TSPC) Flip-Flops, based on dynamic logic implementation, are area-saving and high-speed compared to standard static flip-flops. Furthermore, logic gates can be embedded into TSPC flip-flops which significantly improves performance. As a promising approach to keep the pace of Moore's Law, functionality-enhanced devices with multiple independent gates have drown many recent...
This paper presents the design of complementary metal-oxide-semiconductor (CMOS) based thermal energy generator (TEG). Energy harvesting techniques have been employed as to extend the lifespan of various battery-operated applications for many years. Among numerous techniques available, thermal energy harvesting has proven to be a widespread practice in harvesting electrical energy as heat can be found...
The ab initio work quantitatively explains the physical mechanism of threshold voltage shifts in n-type and p-type metal-oxide-semiconductor field-effect transistors with HfO2/Al2O3 gate stack. In the study, the θ phase alumina has been chosen for better lattice matching of the (100) HfO2 and (100) Si substrate. Using dipole correction method, the dominant dipole moment responsible for the threshold...
A 40GS/s Track-and-Hold amplifier with active cancellation capability is presented to mitigate the effect of leakage in transmission gate during the holding mode. A single-ended RF input signal is converted to a differential signal that feeds the active cancellation network. A record SFDR3 of 62dB with 40GS/s and 5GHz input frequency is reported in 45nm CMOS SOI. A droop voltage of 20µv/ns is measured...
In this paper, a critical-path aware power consumption optimization (CAPCOM) using mixed-VTH cells for low-power SOC designs is presented. Using the critical-path weighted sensitivity as an index for assigning each cell to LVT, HVT or MVT, the CAPCOM provides an effective power saving for a low-volt/ low-power SOC design, as indicated in a 16-bit multiplier circuit with 3811 logic cells using a 90nm...
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