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A detailed statistical characterization of drain current local and global variability in sub 15nm gate length Si/SiGe Trigate NW pMOSFETs is carried out. An analytical mismatch model is used to extract the main matching parameters. Our results indicate that, despite their very aggressive dimensions, such devices maintain relatively good variability performance.
This work presents the analog performance of strained SOI nanowires for the first time. Triple gate MOSFETs made in strained and unstrained SOI material with variable fin widths from quasi-planar transistors to nanowires with aggressively scaled fin width are compared using experimental results in the temperature range of 300K down to 10K. Intrinsic voltage gain, transconductance and output conductance...
This paper describes the design, construction and performance of a 5 kVA aviation power module containing silicon carbide MOSFETs. The function and control of this module within a commercial aviation power electrical control unit (ECU) application is explained and the power dissipation benefits from the use of these MOSFETs instead of silicon IGBTs when driving an electrical motor controlling an aileron...
This paper investigates the switching performance of six-pack SiC MOSFET and Si IGBT modules for motor drive applications. Both the modules have same packaging and voltage rating (1.2 kV). The three bridge legs of the modules are paralleled forming a single half-bridge configuration for achieving higher output power. Turn-on and turn-off switching energy losses are measured using a standard double...
2D materials (2Ds), in particular the 2Ds beyond graphene, have attracted considerable attention in the transistor community. While rapid progress on 2D transistors has been achieved recently, the prospects of 2D electronics is still under debate. In the present paper we discuss our view of the potential of 2D transistors for digital CMOS and for flexible electronics. We show that 2D MOSFETs show...
This invited paper reviews the evolution of silicon carbide power devices from the initial proposal for wide bandgap semiconductors for power electronic applications in 1979 to current commercially available devices. The potential social impact on this technology on energy savings and the environment is briefly discussed.
Wide-bandgap power devices such as those made from silicon carbide (SiC) and gallium nitride (GaN) realize fast switching and it helps to increase the efficiency of power conversion. This report experimentally compares static and dynamic characteristics of wide-bandgap power switching transistors; SiC MOSFET and cascode GaN transistor, and focuses on their characteristics of electromagnetic interference...
The power delivered by a photovoltaic (PV) to the grid must be modified in multiple stages. The operation concept of the micro-inverter is to increase the low output voltage received from a PV panel. Wide bandgap (WBG) power devices such as SiC MOSFETs offer multiple advantages over traditional silicon power devices when are used in a solar energy field due to their high switching frequency, high...
Modern power electronics devices based on SiC power MOSFETs technology become more demanding in the last few years. They show better performance over Si-IGBTs on renewable energy power conversion systems due to their higher switching frequency, higher temperature capability, higher power density and higher reliability. This paper presents a benchmarking of SiC-MOSFET and Si-IGBT power devices with...
4H-SiC MOSFET have been fully characterized in the forward conduction over the temperature range −30°C to 150°C. The distinct characteristics of SiC MOSFET and the Si MOSFET counterpart are compared and explained. A physics-based analytical model for SiC MOSFET has been developed by using the MAST language and simulated with SABER. The influences of the geometry (short channel effects), channel mobility,...
This paper researches the performance benefits of replacing the Si IGBTs and diodes in a power module for automotive drives with either 650 V or 900 V SiC MOSFETs. Evaluating the mean conduction and switching losses in a load profile allows a comparison of both voltage classes in order to show which class offers the lower overall losses in the given application. Furthermore, the influence on the switching...
In this paper, we present for the first time, the experimental results of a “Bimode Cross Switch (BXS)-Hybrid” built with 3.3kV Silicon Enhanced Trench Bi-mode IGBTs (Si-ET-BIGT) and Silicon Carbide MOSFETs (SiC-MOSFET). Also, we have compared the static (on-state) and dynamic (switching) characteristics of the 3.3kV BXS-Hybrid (1 × Si-ET-BIGT + 2 × SiC-MOSFET) with the full SiC-MOSFET (4 × SiC-MOSFET)...
The design to cost is a major challenge for the practices of power modules' development especially when faced with very polymorphic demands. The technologies used are not always appropriate in view of the required technical specifications, or can be too expensive, or too basic. Developing a power module consists in making the best technological choices to fit the mission profile of an application;...
Electrical properties of silicon-dot-based single-electron memory devices were investigated using numerical simulation. For an accurate calculation of tridimensional electron wave functions in the dots and in the dot-isolation surrounding the nextnano++ simulator was employed. Tunneling rates between the dot and other electrodes were calculated using a post-processing of the electron-state-specific...
This paper is focused on the analysis of the cascode connection of Superjunction MOSFETs (SJ-FET) working as a high voltage normally-off power switch, based on Silicon technologies. In order to carry out this analysis, it will compare the cascode structure with the standalone connection, in which only one SJ-FET is used. The comparison is carried out in terms of switching behaviour, in order to verify...
This paper has been dealt with ferroelectric behavior of silicon doped hafnium oxide using double gate MOSFET with different oxide thickness. The Variation in the drain cuurent with the gate voltage from -1.5V to 2.0V and 2.0V to -1.5V has been studied and these variations also compared with the conventional double gate MOSFET. The study mainly concentrates on the polarization behavior of silicon...
Ion Implantation processes contribute significantly to the development of power devices. In this case not smallest scale technologies are addressed, but accurate treatment of the frontside, backside and bulk material play a crucial role to guarantee for key parameters such as highest power densities and required switching behavior. Some representative examples of the development needs of high, medium...
In this paper, a design of Double gate junctionless MOSFET using Germanium for improvement of performance parameters is proposed. As Germanium is having higher mobility of electrons than the Silicon, it suitable for the smaller semiconductor devices with more drain current ratio than Silicon with high throughput. Furthermore, performance of Germanium DGJLT is evaluated with different high-k dielectric...
This paper evaluates the SuperJunction MOSFET in cascode configuration with a low-voltage silicon MOSFET. The structure combines the good switching performance provided by the cascode configuration with advantages of the silicon technology as the robustness, the maturity and the low-cost. The objective of this paper is to elucidate and to demonstrate the reduction of switching losses of SuperJunction...
Automotive point-of-load (POL) dc-dc converters have wide input voltage range and strict EMI limitation requirements. In order to avoid the AM band interference, the switching frequency is desired to be above 2 MHz. The buck converter is widely used for this application but it has low efficiency at high switching frequency and poor EMI performance due to high dv/dt slew rate. A new active-clamp buck...
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