The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The SiC — silicon carbide MOSFET has exclusive features thanks its become better switch than Si — silicon semiconductor switch. There are some special features that need to be understood for use to in full devices potential. The advantages and differences of SiC MOSFETs have been described in this article in compare with Si IGBT transistor.
Hydrogenation of Si(110) surface due to hydrogen plasma was investigated, using in-situ infrared spectroscopy in multiple internal reflection geometry (in-situ MIR-IRAS). The amorhpous layer was formed. Especially, the SiH2 components were finally formed in the amorphous layer. The formation of the SiH2 is performed with 0.5-order reaction, in a comparion with the hydrogen exposure time. It is suggested...
Video streaming is very important in both wired and wireless communications. Switching among streams of different bit-rates and/or views is always necessary in related applications. The techniques of SP/SI frames in H.264/AVC have been developed to facilitate bit-stream switching without causing drift errors. However, the frames that are allowed for switching have to be determined in advance so real-time...
It is well known that the current definition of the kilogram in the SI, which is defined by reference to a prototype artifact, is unsatisfactory due to the fact that the mass of the prototype is drifting. Some of the other definitions of the base units of the SI are also due for revision and improvement. In October 2011 the CGPM passed a resolution approving plans for new definitions of the kilogram,...
The kilogram, unit of mass, is the last base unit of the International System of Units still defined in terms of a material artifact. A redefinition of the kilogram in terms of an invariant of nature, the Planck constant, is expected in the near future. A review of the present status of the experiments opening the way to this new definition will be presented.
The sensor is a multi-board system composed of backboard and other plugging boards. It is a crucial problem that how to assure the signal integrity (SI) for such a complex system. In this paper, we mainly discuss the various signal integrity plots of critical signals in digital circuit board and EMC problems in the multi-board sensor system. The SI and EMC conditions can be improved with the help...
This paper describes techniques and key parameters for designing long-distance path of 10Gbps signal transmission in copper backplane system. First, two connecting modes for copper backplane have been presented. And then, some materials and connectors used in high speed PCB are clarified. For high-speed layout, various techniques such as routing high speed signals with angle mode to mitigate the fiber-weave...
This paper proposes Enhanced Fuzzy C-means technique (EFCM) based infrared image segmentation and its broad application in Automatic detection systems. The EFCM based image segmentation is able to approximate the exact number of clusters present in the image. EFCM based segmentation is applied on various infrared images that can be used for automatic detection systems and compared with widely used...
This article gives two new and simple methods to treat porous silicon material, including acid treatment and cathode reduction treatment, to improve luminescence properties of porous silicon material. The results show that: the processing of cathode reduction can improve luminescence stability of porous silicon; the processing of acid treatment can effectively improve luminescence intensity of porous...
A new vertical cylindrical cell with 25nm diameter bi layer poly-silicon channel for 3D NAND Flash memory is successfully developed. It achieves minimum cell area (4F2) without the need for pipeline connections. We introduced a thin amorphous silicon layer along with the oxide-nitride-oxide (ONO) gate stack inside the memory hole. This additional silicon layer protects the tunnel oxide during opening...
In this study, we use porous silicon based microcavity to detect glucose solution concentration in real time. With the aid of a portable fiber spectrophotometer, we recorded the changing of resonance dip position of the porous silicon microcavity in real time as a function of the changing of the concentration of the infiltrated glucose solution. Results show that the sensor has rapid response of 25...
The on-chip Transient Voltage Suppressor (TVS) embedded in the silicon based transceiver IC has been proposed in this paper by using 0.8 μm Bipolar-CMOS-DMOS (BCD) process. The structure of the on-chip TVS is a high voltage Dual Silicon-Controlled-Rectifier (DSCR) with ±19V of high holding voltage (Vh) under the evaluation of 100 ns pulse width of the Transmission Line Pulsing (TLP) system. The holding...
Monolithic light source is the only missing component to realize all silicon based photonics for high density and low power optical interconnections. In this paper, we will review our attempts to develop light-emitting devices based on silicon quantum wells made by state-of-the-art silicon process.
Analog IP cores exhibit a multivariate response to dynamic variations of an operation environment, that are typically represented by power and substrate voltage changes. A testbench provides a silicon area to embed and diagnose custom IP cores with power delivery and substrate networks, where the area is surrounded by on-chip precision waveform capturing and configurable power and substrate noise...
New on-chip 4-bit transient-to-digital converter for electrical fast transient (EFT) protection design has been proposed. The converter is designed to detect EFT-induced transient disturbances and transfer different EFT voltages into digital codes under EFT tests. The experimental results in silicon chip have confirmed the successful digital output codes.
Metal as floating gate (FG) in combination with high-k interpoly dielectrics (IPD) is seen as a possible solution to continue the scaling of NAND Flash technology node beyond 25nm. We have investigated the thermal stability of TaN metal as FG in combination with Hf based high-k IPD stacks. IPD leakage is found to worsen with high temperature anneal and causing degraded memory behavior. Comparative...
Crystalline phase high-k films are promising gate stack structure for the advanced CMOS technology because they are thermodynamically stable and have higher dielectric constant when compared with amorphous phase high-k films. A disadvantage of crystalline high-k films, however, is the large leakage current, which is sometimes caused by grain boundaries and non-crystallized region in ultra-thin crystalline...
This paper proposes a physics-based variability prediction model integrating the effects of plasma-induced damage (PID) in advanced LSIs. We focus on charging damage to high-k gate dielectrics and physical damage (Si recess by ion bombardment). In addition to gate length-variation which has been discussed so far as a dominant factor for (static) variability, we demonstrate how PID impacts on - increases...
In order to compare the performance differences between power IGBTs fabricated with 4H-SiC and Si, the basic theory of semiconductor physics for 4H-SiC and Si is used to describe the quantitative relationship between their epilayer doping concentration, epilayer thickness, on-resistance and breakdown voltage, the MATLAB software is used to calculate the comparison curves. For devices with breakdown...
With a significant increase in the design complexity of cores and associated communication among them, post-silicon validation has become a demanding task in System on Chips (SoCs) design. To ensure that final products are fault-free and ready for market, the post-silicon validation goal is to catch bugs and pinpoint the root causes of errors that could escape from pre-silicon verification tools....
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.