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Here we report effects of gate length (Lg) scaling on the ballistic performance of a Si nanowire (NW) FET using three dimensional quantum simulation. Three different gate length 10nm, 12nm & 15nm are analyzed while 3nm diameter of the NW are taken. Current-Voltage characteristic is obtained by self-consistently solving the Non Equilibrium Greens Function (NEGF) transport equation with Poisson's...
Recently more people are watching video using mobile devices such as smart phones. Therefore CATV operators are planning N-Screen services to their subscribers. They have two ways to provide N-Screen services. One is an H/E based N-Screen approach that transforms contents into IP streams directly from H/E to subscriber's devices. The other one is a gateway based N-Screen approach that converts RF...
This paper considers the impact of the planned redefinition of the SI on electrical traceability, with a focus on resistance and voltage calibration. The new SI will replace the 1990 values for the critical constants RK and KJ. With the present state of experimental data, we can say with good confidence that the required relative changes will be of order the 2 × 10−8 for RK and 10 × 10−8 for KJ. These...
In this work, InN nanowire photo detectors on a Si platform were investigated, and a light response up to 1.55 μm was observed at room temperature. InN nanowire light sources on Si are also discussed.
In this work we show the impact of surface cleaning on the dynamic characteristics of Au-free AlGaN/GaN Gated Edge Termination Schottky Barrier Diodes (GET-SBDs). It is demonstrated that the current dispersion (measured in pulsed regime) can be reduced by introducing a N2 plasma cleaning step in the anode metal deposition chamber. Moreover, diodes treated with N2 plasma show lower current drop after...
This paper reports a normally-off high voltage hybrid Al2O3/GaN gate-recessed MOSFET fabricated on silicon substrate. The normally off operation was implemented by digital gate recess using an oxidation and wet etching based AlGaN barrier remove technique. The Al2O3/GaN MOSFET features a true normally off operation with a threshold voltage of 2 V extracted by the linear extrapolation of the transfer...
Gallium nitride (GaN) based High Electron Mobility Transistors (HEMTs) are candidates for the next generation of power electronic devices and are therefore subject of intense research activities worldwide. Technology CAD (TCAD) has proven a major impact on the optimization of silicon based device technologies. It is a logical follow up to provide accurate simulation tools, methods and models for GaN-based...
This paper reports on the reduction limit of switching loss in Si-IGBTs without increasing the on-state voltage. We focused on surge decrease and turn-off loss saturation with small gate resistance. It became clear that the surge decrease derives from a dynamic avalanche adjacent to the trench bottom and leads to the turn-off loss saturation. This avalanche phenomenon is suppressed by the reduction...
This paper reports on an industrial DHEMT process for 650V rated GaN-on-Si power devices. The MISHEMT transistors use an in-situ MOCVD grown SiN as surface passivation and gate dielectric. Excellent off-state leakage, on-state conduction and low device capacitance and dynamic Ron is obtained. Initial assessment of the intrinsic reliability data on the in-situ SiN is provided.
In this work, a thermally stable air-bridged matrix (ABM) AlGaN/GaN high electron mobility transistor (HEMT) with micromachined diamondlke carbon (DLC)/Titanium thermal-distributed layers was demonstrated. After removing the Si substrate beneath the HEMT, the DLC/Ti heat dissipation layers were deposited on the backside of the HEMT, and a significant breakdown voltage improvement was observed. The...
Effects of annealing on GaAs/Si bonding interfaces of III-V-on-Si hybrid tandem solar cells were investigated. Using a cross sectional transmission electron microscope, an amorphous layer was observed at the interfaces of GaAs/Si junctions that had been fabricated by the surface active bonding method. The amorphous layer vanished after the annealing at 400 °C. We also investigated the effects of the...
This paper discusses the characteristics of the InSb/Si heterojunctions. Thin epitaxial layers of the InSb were grown on p-Si substrate by using the surface reconstruction controlled epitaxy. This epitaxial growth technique permits us to grow high quality InSb on Si (111) surface. The n-InSb/p-Si heterojunction pn diodes were fabricated with these samples, and characterized by current-voltage, and...
The effects of annealing on n-Si/n-4H-SiC junctions made by the surface activated bonding were investigated. Both the forward and reverse characteristics were improved by annealing at higher temperatures.
Si/mesa-etched Si p-n junction was fabricated by the reactive ion etching and the surface activated bonding. The SEM observation of their cross section indicated that the height of the mesa was approximately 13 μm. Their capacitance-voltage and current-voltage characteristics were also measured.
Power amplifiers (PAs) are used in the wide range of electronics such as RADAR, base stations, jammers and cable TV applications. These amplifiers can achieve design specifications like high efficiency and high output power (>20W) as much as the capability of the transistor. For this reason; Si LDMOSFETs, GaN HEMTs and GaAs HFETs are advancing their place in the market. In this article; GaN, Si,...
Routing is a challenging issue in MANET due to node mobility, unstable links and limited resources. Swarm Intelligence (SI), as demonstrated by social behavior of ant based on self organization, which allows exploiting to coordinate population of artificial ants the collaborative to solve computational problems. However already existing SI based routing protocols find a optimal path by considering...
An effective method s proposed to enhance the SI and PI of a power-bus structure PBS) in a layered medium PCB by suppressing the EMI-causing resonance mode It s implemented by a complementary split-ring-resonator as a 1-cel metamaterial-inspired geometry formed in the PBS to remove the resonance that hinders the signal transfer from one layer to another. The method is verified by the full-wave simulation...
InGaN micro-light emitting diodes on Si substrates have been fabricated and characterized. Their abilities for micro-display, high modulation bandwidth of 270 MHz and data transmission rate of up to 400 Mbit/s have been demonstrated.
The complexity of an image tells many aspects of the image content and is an important factor in the selection of source material for testing various image processing methods. We explore objective measures of complexity that are based on compression. We show that spatial information (SI) measures strongly correlate with compression-based complexity measures. Among the commonly used SI measures, the...
The electrical properties of GaAs/Si heterojuctions fabricated by using surface-activated bonding were experimentally investigated. The results of measurements suggested that the heterostructures revealed type-II band lineup.
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