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Almost all electronic circuits require a reference, be it voltage, current, or time. A well-designed reference is expected to provide a “stable” point that will be independent of the potential variations in its operating conditions. While there has been decades of extensive amount of creative work in the world of reference design, with the emergence of new applications, reference designers are now...
High bandwidth Package on Package (HBPoP) had be well used which replaced FCMAPPOP in high-end mobile products with its advantages of wide I/O counts, high performance and the better integration between application processor and stacked memory packages. The structure of HBPoP is utilized flip-chip technology with ball grid array (BGA) balls on the bottom package and connect top DRAM package with substrate...
We report on the first experimental observation of the intrinsic terahertz photoluminescence of semiconductors caused by optical transitions in free excitons. The experiments were carried out at helium temperatures on Si crystals.
We present optically pumped lasing from group IV GeSn/SiGeSn heterostructures. A comparison between double heterostructure and multi-quantum-well microdisk cavities reveals advantages of the multi-well design. Strongly reduced lasing thresholds compared to values from bulk devices are observed.
Temperature-insensitive silicon MZI with local heaters is fabricated by DUV lithography. Temperature dependence is less than 5pm/°C but the wavelength can be tuned by the local heater at the efficiency of 24mW/FSR. The results are discussed in comparison with permanent wavelength trimming by thermal annealing.
The control of various processes at nanoscale in a real time and easy manner is a challenge for different applications: from lab-on-a-chip to catalysis and medical diagnostic systems. Here, we demonstrate a new system, representing a metal-dielectric (hybrid) nanocavity for multifunctional sensing at nanoscale. The cavity provides enhancement of Raman signal and simultaneous control of the analyte...
We report on a 32-MHz quartz TCXO fully integrated with commercial CMOS electronics and vacuum packaged at wafer level using a low-temperature MEMS-after quartz process. The novel quartz resonator design provides for stress isolation from the CMOS substrate thereby yielding classical AT-cut f/T profiles and low hysteresis which can be compensated to < ± 0.2 ppm over temperature using on-chip third-order...
External Quantum Efficiency (EQE) measurement is one important method that is implemented to observe solar cells' behaviour in a specific range of wavelength. This research measured EQE in different type of solar cells: silicon, dye-sensitised solar cell (DSSC), and perovskite solar cell. The objectives of this research are to understand the correct EQE measurement method and to understand the factors...
We investigate heat conduction across the interface of a monolayer semiconductor and its supporting substrate using molecular dynamics (MD) simulations. For the first time, we show that for the interface between MoS2 and SiO2, thermal boundary conductance (TBC) is 15.5 ± 1.5 MWK−1m−2. The TBC is found to increase proportionally with the strength of the van der Waals interactions and is largely independent...
We present our recent researches on novel group IV nano- and micro-structures for potential light sources on Si, including the tensile strained Ge quantum dots (QDs), GeSn thin films and microstructures, and Ge(Sn) nanowires. Tensile-strained Ge QDs were grown by SS-MBE, and photoluminescence was achieved. The GeSn thin films were demonstrated with Sn concentration above the bandgap transition critical...
GeSn-based optically pumped lasers and photoconductors have been systematically investigated. The operation wavelength of these devices covers 2–3 μm. Since GeSn technique is fully compatible with current CMOS process, the GeSn-based devices can be widely used in the area of Si integrated photonics.
Additional functionalities on semiconductor microchips are progressively important in order to keep up with the ever increasing demand for more powerful computational systems. Recently, III-V integration on Si attracted significant research interest [1] due to the promise to merge mature Si CMOS processing technology with III-V semiconductors possessing superior material properties e.g. in terms of...
InxGa1−xAs MOSFETs with superior carrier transport properties promise to deliver high current at reduced supply voltages [1-2]. Strained III-V quantum well FinFETs (QW-FF) have been investigated [3-4] as feasible pathways to low power logic. For sub-7 nm nodes, challenges in maintaining electrostatic integrity in FFs has led to the proposal of faceting the FF channel (corrugated channel) to produce...
Hall-effect measurements for n-type and p-type GaN with low doping concentration are presented. The GaN layers were grown by metal-organic vapor phase epitaxy on hydride-vapor-phase-epitaxy-grown free-standing GaN substrates. For n-GaN, the origin of acceptor which compensating donor is not only C but also native defects for the Si doping concentration of 1016 cm−3 level. The electron mobility is...
We report for ultra-thin Si tunnelling diodes that negative differential conductance (NDC) is dominated by the excess current at room temperature. This is attributed to the gap-states induced by the co-dopants in the pn junction. First-principles simulation shows that the presence of co-dopants in the pn junction region leads to an increase in the interband tunnelling current by two orders of magnitude...
A technique to fabricate a vacuum cold-cathode nanoelectronic diode with a remarkably low 2-V turn-on voltage was recently presented. A three-terminal device based on the same technology is here designed and fabricated, to implement a vacuum nano-triode. The attempt was partially successful as the excessively large gate radius does not allow effective current control. Nonetheless, the obtained experimental...
Magnesium silicide (MgSi) on Si use in Tunnel FET source-channel region that can improve the drive current to 2 order and more. In this work, we propose to deposit Mg and Si for multi-stacks by RF magnetron sputtering and evaluated the firmed Mg2Si. That has an atomically flat interface and surface are formed before and after annealing and Mg atoms encroachment into Si, therefore the Mg2Si on Si was...
STT-MRAM (Spin Transfer Torque Magnetic Random Access Memory) has attracted considerable attention of late since it is the most promising logic compatible nonvolatile memory that is suitable for advanced logic nodes (N28 and beyond) in terms of endurance, speed and power. Embedded STT-MRAM has thus been proposed as a candidate for emerging low standby-power connectivity systems such IoT (Internet-of-Things)...
The control of diamond nucleation and the early stages of diamond growth are essential for control of the diamond properties that are sensitive to or directly depend on the film anisotropy, grain size, and microscopic voids in the film. This phenomenon particularly affects the thermal conductivity of thin diamond films. Measuring the thermal conductivity/thermal diffusivity of material like diamond...
Utilizing GaN (Gallium Nitride) DC-DC converter for speed control of BLDC (Brushless DC) Motor is investigated in this paper. The proposed system replaces the well-known Si-based switches by GaN FETs which are faster by minimum ten times and much compact that it recedes the size of Switched Mode Power Supply (SMPS) application. The contemplated system uses a GaN-based DC-DC Resonant Converter to drive...
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