Serwis Infona wykorzystuje pliki cookies (ciasteczka). Są to wartości tekstowe, zapamiętywane przez przeglądarkę na urządzeniu użytkownika. Nasz serwis ma dostęp do tych wartości oraz wykorzystuje je do zapamiętania danych dotyczących użytkownika, takich jak np. ustawienia (typu widok ekranu, wybór języka interfejsu), zapamiętanie zalogowania. Korzystanie z serwisu Infona oznacza zgodę na zapis informacji i ich wykorzystanie dla celów korzytania z serwisu. Więcej informacji można znaleźć w Polityce prywatności oraz Regulaminie serwisu. Zamknięcie tego okienka potwierdza zapoznanie się z informacją o plikach cookies, akceptację polityki prywatności i regulaminu oraz sposobu wykorzystywania plików cookies w serwisie. Możesz zmienić ustawienia obsługi cookies w swojej przeglądarce.
In the present paper, the design and simulation of square diaphragm, MEMS piezoresistive pressure sensor for intracranial application has been presented. The pressure sensor design presented in this paper consists of a carbon nanotube (CNT) suspended on a square and slotted shaped diaphragm as piezoresistor. The slot was added into the design of the square diaphragm to reduce the residual stress and...
3D-LSI stack containing diametrically highly-scaled through-silicon-vias (TSVs) with diameter 2µm as well as conventional 20 µm-width Cu-TSVs were carefully studied for the thermo-mechanical stress induced by Cu-TSVs via micro-X-ray diffraction using synchrotron radiation at Spring-8. It was observed that the TSV diameter has huge impact on the magnitude of resultant thermo-mechanical stress. The...
In order to clarify the source of resonant frequency drift in MEMS resonators, thermal expansion effect of packaging on MEMS devices was investigated. The strain in a silicon plate bonded on an aluminum plate with temperature was precisely measured. Increasing amount of strain in the aluminum plate was as large as 200 micro-strain with increase in only 20 degrees of temperature. The strain in the...
Low fluence heavy ions incident on high resistivity Si produce lattice defects which act as trapping centers, and produce also an important local field of strain. The strain field intensity increases with the increase of the difference in atomic size and mass between the ion and the Si atom host. We investigate the correlation between the change of trapping parameters and the strain field. The strain...
Three-dimensional integrated circuits (3D-ICs) packaging has attracted a lots of attentions due to it has advantages of integrating heterogeneous functions among stacked chips. The thermal mismatch stresses with regard to interconnects composed through silicon via (TSV) and microbump induced by thermal cycling loads becomes a serious concern while a thinner stacked die thickness is required. To shrink...
Reported here is an experimental study and mechanical characterization of the annealing process of TSV structures. A major focus of this study is the extent of thermo-mechanical stresses, which form during this processing step. Results of bowing as well as copper protrusion measurements before and after the annealing process are presented as indicators for the stress development during the heating...
A strong demand of even more compact and reliable power electronic devices has powered in the last years the development of advanced device design techniques. A key role in these techniques is played by the reliability assessment, a procedure that estimates the expected lifetime of power devices according to given mission profiles. The reliability assessment of a low voltage MOSFET working in avalanche...
Because of an ongoing shift to FinFETs/ultra-thin body SOI based devices for the 22nm node and beyond, mobility enhancement in such structures is an important issue. Stress engineering used by the semiconductor industry to boost mobility was predicted to become less efficient in ultra-thin SOI structures due to the less pronounced dependence of the transport effective mass on strain. Using the k •...
The performance of uniaxially strained Si nanowires (SiNWs) is investigated with the multiband k.p method. A rigorous quantum-mechanical calculation of hole current based on the non-equilibrium Green's function (NEGF) method is carried out. For both unstrained/strained-SiNWs, the necessity of using the tuned k.p parameters instead of the bulk k.p parameters for nano-scaled devices is examined by benchmarking...
SILVACO TCAD simulator which is consisting of a process simulator, ATHENA and device simulator, ATLAS were used to simulate and analyze the electrical characterization of 45nm NMOS with strained silicon on insulator (sSOI). In this paper, the process parameters with halo implantation and sSOI were used. The effective simulation was performed by using ATHENA process simulator to modify theoretical...
The symmetry of the silicon crystal cell under elementary deformation is theoretically investigated. A model exploiting a linear approximation is derived for predicting the behaviour of second-order dielectric susceptibility, providing excellent agreement with experimental results.
This paper reports a theoretical and experimental study on induced strain in silicon-based rib structures. Simulations of induced stress and strain distribution were performed for nitride-strained silicon; moreover, locally-accurate strain measurements were performed on manufactured rib structures in proximity of the nitride-to-silicon interface employing the Convergent Beam Electron Diffraction (CBED)...
Wafer transferring process is often used in the semiconductor packaging equipment. Wafer transferring system is an essential part in the IC equipment. Smooth and efficiency are the design requirement of wafer transferring. As the rising of smart phones and tablet PCs, thin wafer is increasingly demanding. Large and thin wafer is susceptible to damage because of gravity during transmission, which greatly...
Since 3D-TSV technology has been more and more popular aiming at the demand of lightweight and multi-functions of electronic devices in recent years, the μ-C4 bumps with smaller size which interconnect the stacked die will suffer more serious operating stress, and even one of the thousands bumps fails, the device will fail. Hence, it is meaningful to study the reliability of smaller size and higher...
Germanium has been highly investigated as a potential light emitting material for the integration of photonic devices on silicon-based electronics. In the search of merging electronics and photonics using only silicon and germanium as base materials, many unsuccessful attempts were made in the past to fabricate an efficient group IV light source. Indeed, these semiconductors are known to be poor light...
The performance of strained Ge bridges is compared with unprocessed layers in terms of their non-radiative recombination time. Despite strain and additionally introduced free surfaces, the lifetime for the strained microstructures does not decrease.
We demonstrate the growth of III-Sb buffers on GaAs and Silicon substrates through the use of an epitaxial technique involving the formation of interfacial misfit dislocation arrays that is formed between the III-Sb alloy and the substrate. The interfacial misfit array results in the spontaneous relaxation of the highly mismatched III-Sb semiconductor and provides a platform for the realization of...
An STI-last integration scheme was successfully developed to fabricate low-defectivity and dopant-controlled SiGe SRB / sGe Fins. For the first time, 15 nm fin-width SiGe SRB/highly-strained Ge pFinFETs are demonstrated down to 35 nm gate length. With a CETINV-normalized GM,SAT,INT of 6.7 nm.mS/µm, the Si0.3Ge0.7 / sGe pFinFETs presented in this work improve the performance by ∲90% as compared to...
We demonstrate high performance undoped Ge0.92Sn0.08 quantum well (QW) pMOSFETs with in situ Si2H6 passivation on (001), (011) and (111) orientations. (011) and (111)-oriented Ge0.92Sn0.08 QW pFETs achieve higher on-state current ION and effective hole mobility μeff compared to (001) devices. Ge0.92Sn0.08 (111) QW pFETs demonstrate a record high μeff of 845 cm2V−1s−1 for GeSn p-channel devices (Fig...
Analytical models of stress and deformxation of through-silicon vias (TSV), relative to numerical ones, have the advantage of being inexpensive to evaluate and in providing insight. They have the additional advantage of allowing one to embed them in ECAD tools for real time design decisions. Motivated by this reasoning, in this paper, an analytical model for the three-dimensional state of stress in...
Podaj zakres dat dla filtrowania wyświetlonych wyników. Możesz podać datę początkową, końcową lub obie daty. Daty możesz wpisać ręcznie lub wybrać za pomocą kalendarza.