The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Hybrid inorganic/organic Cd-doped ZnO nanostructures called CZO nanohybrids were electrochemically synthesized on Ga-doped ZnO/Si. The CZO nanohybrids comprise alternating layers of organic surfactant and CZO inorganic phase. These lamellar structured nanohybrids were found to be c-axis oriented, perpendicular to the substrate with good crystallinity. During photoluminescence measurement, a strong...
Graphene on silicon with silicon dioxide quantum dots is a promising opto-electronic material. The optical band gap and the corresponding optical conductivity are estimated using the density functional approach with the combination of molecular dynamics. The regular repeating unit cell of graphene silicon nano-texture is identified using the classical molecular dynamics simulations. Electronic calculations...
Series of a-SiN:H thin films similar in thickness (380 ± 10 nm) and a-Si:H/a-Si3N4 multi-layered films (515 ± 20 nm) were prepared by PECVD technology from silane mixed with argon (90 % Ar/10 % SiH4) on Corning Eagle 2000 glass, SiO2 and silicon substrates. Deposition of thin films was carried out on a Samco PD 220 NA PECVD system. Multi-layered films were consequently annealed at high temperatures...
Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content [1]. This feature can be exploited for highperformance tunnel FET (TFET) application [2], [3]. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a high on-current. In order to reduce...
In this work, we use density functional theory-based calculations to study the hole trapping properties of single carbon-related defects in silicon dioxide. We show that such interstitials are stable in the carboxyl configuration, where the interstitial carbon atom remains three-fold coordinated with chemical bonds to two Si atoms and an oxygen atom (Si-[C=O]-Si). Using formation energy calculations,...
Silicon carbide (SiC) is an emerging wide bandgap semiconductor having superior physical properties such as high critical electric field and high saturated drift velocity. Discrete high-voltage, low-loss SiC power devices such as 600–1700 V Schottky barrier diodes and FETs (MOSFETs and JFETs) have currently been developed, and small-scale production has started. SiC is also attractive for advanced...
This works presents a study of the location of 3D band-to-band tunneling barriers in order to create improved tunneling devices. Specifically, the i-Si/n-InAs junction is considered. The large lattice mismatch in this material system causes dislocations in the interface and traps in the bandgap. Alternative device configurations are considered that move the tunneling away from the physical interface,...
In this paper, a realistic atomic model is used to study the atomic ordering effect on electronic structures of Si0.5Ge0.5. The hybrid density functional theory (DFT), HSE06, is chosen as the methodology. The calculated bandgap and effective masses of Si and Ge at various symmetry points are first validated by the reported experimental data and empirical pseudo-potential method (EPM) calculations...
We report a milestone in device modeling whereby a planar MOSFET with extremely thin silicon on insulator channel is simulated at the atomic level, including significant parts of the gate and buried oxides explicitly in the simulation domain, in ab initio fashion, i.e without material or geometrical parameters. We use the density-functional-based tight-binding formalism for constructing the device...
Phononic crystals (PnCs) can stop surface acoustic waves (SAW) at the band gap frequency range efficiently. Traditional two-dimensional PnCs for SAW have inclusions extending infinitely into the half-space. In fact, experimental specimens with finite-depth inclusions still showed the gaps. In this paper, the PnCs with finite-depth holes on the surface of silicon substrate were analyzed systematically...
Flexible electronics using gallium arsenide (GaAs) for nano-electronics with high electron mobility and optoelectronics with direct band gap are attractive for many applications. Here we describe a state-of-the-art CMOS compatible batch fabrication process of transforming traditional electronic circuitry into large-area flexible, semi-transparent platform. We show a simple release process for peeling...
The Ge/Ge0.94Sn0.06/Ge double heterostructure was grown on a Si substrate via chemical vapor deposition (CVD). The temperature and pump power-dependent photoluminescence (PL) were investigated and the enhanced direct transition at intense pump power was observed.
We report experimental and simulation results for silicon waveguides and resonant cavities in hyperuniform disordered photonic solids. Our results demonstrate the ability of disordered photonic bandgap materials to serve as a platform for silicon photonics.
We will report on the role of the length of silicon nanowire (SNW) in determining the band gap of a structure. We find that the band gap decreases with SNW length for the same diameter and approaches the band gap for an ideal infinitely long SNW. The H/T atomic ratio can be used to express the S/V ratio, which is approximately linearly related to band gap value.
Comprehensive studies on random telegraph signal (RTS) noise have been done to understand carrier trapping processes, with a main focus on the large variations of time constants. It is observed that time constant distributions, as well as thermal activation energy distributions, weakly depend on the substrate doping concentrations or surface orientations. For individual traps, time constants are quite...
A possibility to combine the meta-GGA exchange functional suggested by Tran and Blaha with the LDA pseudopotentials was investigated and a simple extension allowing for the direct reduction of the band gap error was suggested. A set of 19 semiconducting materials was used for testing. The mean absolute value of the relative band gap error was found to be 2.5 times larger than in the case when meta-GGA...
An heteroepitaxial bonded III-Von Si nanopatterned waveguide is demonstrating a wavelength selective behavior thanks to a super-periodicity added to its sub-wavelength, below band-gap, structuration. Effective Medium Theory has been implemented for modal effective index determination, allowing a quick and nevertheless detailed investigation of the role of a large number of geometrical parameters....
Ensembles of p-i-n InGaAs micro-discs, grown by micro selective-area metalorganic chemical vapor deposition are fabricated into LED structures. These structures exhibit electroluminescence with spectral peaks at 1580 nm, a sharp roll-off at 1590 nm and a full-width half-maximum in excess of 90 nm depending on injection current. This spectrum covers the entire C-band and establishes monolithic InGaAs-on-Si...
In this paper, for the first time, a new graphene-based Schottky barrier solar cells consisting of InxGa1−xN with low Indium contents (x <0.45) is proposed. Then, their solar power conversion efficiency simulated and optimized using an analytical model taking into account radiative and Shockley-Read-Hall recombination. Also, the effect of the temperature and doping concentration of InxGa1−xN on...
We are reporting the design of a new hypersonic filter with the operating frequency of ∼ 2–7 GHz, by means of a 2D nanophononic crystal (NPnC) platform. The 2D NPnC is composed of a periodic array of infinitely long nanorods of silicon, arranged in a square lattice of constant a0=96 nm, in air background. The radii of the CMOS compatible Silicon nanorods are r0=40 nm. Mechanical waves propagating...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.