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Silicon nanocrystal (Si-nc) trapping layers offer several advantages on standard poly-Si floating gates, as improved data retention after endurance in particular at high temperatures, robustness toward oxide defects, two-bits per cell storage and full compatibility toward CMOS process. It has also been shown that coupling the Si-nc concept with high-k control dielectrics, by improving the gate coupling...
We have grown Si/Ge nanodot superlattices via low-pressure chemical vapor deposition in order to analyze their performance as thin-film solar cells. Self-assembled Ge nanodots are included in the base region in order to boost absorption of near-infrared photons and to increase short-circuit current density, Jsc. At a relatively low dot density of 5.5 ?? 109 cm-2, both 20- and 40-period cells exhibited...
We describe a novel approach to grow Si nanostructures embedded into crystalline rare earth oxides using molecular beam epitaxy. By efficiently exploiting the growth kinetics during growth one could create nanostructures exhibiting various dimensions, ranging from three dimensionally confined quantum dots to the quantum wells, where the particles are confined in of the dimensions. The crystalline...
An electroless chemical etching technique using polystyrene nanospheres as self-assembled mask is developed to fabricate size-controllable, periodic silicon nanopillars (NPs) and subsequent nanocones (NCs) arrays. The Si NCs are obtained based on the NPs structure using cost-effective ammonia-related etching chemistry. The diameter, height, and periodicity of the NCs can be systematically controlled...
Transverse optical confinement in zinc oxide (ZnO) random cavities on Si substrate is achieved by a self-generated zinc silicate (Zn2SiO4) layer formed between the interface of ZnO and Si after thermal annealing.
The intrinsic hydrogenated nano-crystalline silicon (nc-Si:H) films for p-i-n tandem solar cells have been deposited by plasma enhanced chemical vapor deposition (PECVD) assisted with direct current bias, and were investigated by four-point probe sheet resistance measurement, Raman and ultraviolet-visible (UV-VIS) transmission spectra. By varying technological conditions, the dependence of the conductivity...
Silicon thin film with nanohole array decorated surface is systematically studied via simulation for solar energy harvesting and compared with nanopillar array textured one. It is found that nanohole array structures can significantly improve the light absorption of the silicon thin film with optimized structural dimensions. Moreover, for the same thickness and optimized structure dimensions, the...
Method of formation of regular PAA without a barrier layer in the process of anodizing of Al-film on n-type Si has been developed. Semiconductor InGaN-structures were selectively grown in modified PAA-template by MO VPE. Formed self-organized nanostructures InGaN have nonpolar crystallographic α-orientation. Investigations of luminescent properties and analysis of the spectral characteristics have...
It is determined that the content of Ge in the volume of germanium-silicate glass (GSG) influences density of nanocrystalline grains. It is ascertained that germanium atoms are unevenly distributing between separate nanoclusters as well as in the limits of one cluster. The size and density of germanium nanoclusters may be independently checked by the way of changing of germanium content in the composition...
It is shown that the main condition, under which the process of germanium (Ge) nanoclusters and of the solid silicon-germanium solution formation takes place, is the sorption of atoms of silicon (Si) and Ge on the dielectric base. All stages of the process depend on the purity of the initial base, its orientation and chemical composition of the gas mixture. The size of Ge nanoclusters may be independently...
Results of investigations of ferromagnetic nanostructures enclosing the monolayer ferromagnetic nanodisks of various forms as well as multilayer ferromagnetic nanomagnets are presented. Methods of magnetic force microscopy were applied to observe magnetic states in such nanosystems. We have produced the spin-valve elements on the basis of CoFe/AlOx/CoFe, which perform the 10% alteration of the effect...
The design and technology of manufacturing of optical interconnections on the basis of nanostructured silicon have been developed. The optoelectronic couple with conversion coefficient of current of about 1% has been produced. The possibility of integration of optical and electron interconnections on the silicon chip is demonstrated.
This research is devoted to the study of formation processes of CoSb3 skutterudite phase in nanodimensional CoSb3(30 nm)/SiO2(100 nm)/Si(001) film systems.
We have investigated experimentally the effect of lateral confinement of acoustic phonons in ridges as a function of the temperature. Electrical methods are used to generate phonons in 100nm large nanostructures and to probe the nanostructure temperature in the same time, what allows tracking the heat flux generated and its possible deviation from Fourier diffusive heat conduction. We compare our...
For the first time, a metal-insulator-semiconductor (MIS) device that consists of silicon (Si) nanocrystals embedded in a silicon oxide film is proposed to investigate how the charge accumulation and relaxation can be manipulated by the nanocrystals for high reliable capacitive RF MEMS switch. A tri-layer structure, used as the insulator in our MIS device, comprises a thicker (about 100 nm) rapid...
We spatially resolve photoluminescence from wurtzite InGaAs/GaAs core-shell nanoneedles and characterize their nonuniform quantum well emission. Polarization measurements reveal anisotropy behavior that is reminiscent of GaN and other wurtzite materials.
Erbium doped Si-rich oxide/SiO2 (Er:SRO/SiO2) superlattice structures have been deposited using rf magnetron co-sputtering technique. Rapid annealing treatment with and without passivation (annealing in 5%H2:N2 at 500°C for 1 hour) were carried out. The optimum annealing temperature for un-passivated and passivated samples is 850°C and 1000°C, respectively. Excitation mechanism of Er is through defects...
The intrinsic hydrogenated nano-crystalline silicon (nc-Si:H) films for p-i-n tandem solar cells have been deposited on the corning 7059 glass substrates by plasma enhanced chemical vapor deposition (PECVD) assisted with direct current bias, and were characterized by Raman and ultraviolet-visible (UV-VIS) transmission spectra. By working on varying hydrogen dilution of Silane (??) and direct current...
Nano-layered films of Cu/Cu(Zr)/Zr(Ge) and Cu/Cu(Zr) were deposited on the Si/SiOC:H substrates by magnetron sputtering. Samples were subsequently annealed at temperatures ranging from 350~500??C in vacuum, and characterized by four-point probe technique, glancing incident angle X-ray diffraction, Auger electron spectroscopy (AES) and transmission electron microscopy. The results indicated that the...
We have investigated the optical resonance and near field effects of 2D periodic and absorptive polystyrene (PS) microspheres on Si wafers. The light scattering and coupling of neighbored PS spheres was numerically studied. Nanostructures were prepared on Si substrates using the regular 2D arrays by a single pulsed laser irradiation (KrF, ?? = 248 nm). Periodical PS nanoparticle, PS nanoflowers and...
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