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Hydrophobic properties, electrical properties, ratio of diamond and graphite contents and X-ray diffraction pattern are characterized of diamond-like-carbon thin films which are grown on silicon substrate by RF-CVD. Seeding techniques are varied in this experiment. Silicon substrate is cleaned with three different solvents by ultrasonic cleaner i.e. acetone, methanol, and de-ionized water about 5...
An amorphous silicon suboxide was synthesized by co-sputtering of Au and SiO2 using RF magnetron sputtering. The extracted data from XRD, SEM as well as EDX were utilized to characterize the surface of the thin film samples.
ECN is developing a novel fabrication process for thin film silicon solar cells on steel foil. Key features in this process are: 1) application of an insulating barrier layer which enables monolithic interconnection and texturization of the rear contact with submicron structures for light trapping; 2) Si deposition with remote, linear PECVD; 3) series interconnection by laser scribing and printing...
In this study, vertically aligned ZnO nanowires were grown by metal organic chemical vapor deposition (MOCVD) method. The growth direction of vertically aligned nanowires was along c-axis. For monolithic integration, vertically aligned ZnO nanowires were grown on AlN/Si substrates with a higher aspect ratio in comparison to those on bare silicon substrates. In a separate experiment, micro-patterning...
Top-down fabrication and electrical characterization of undoped p-type silicon nanowires with and without stress using a 4-point bending fixture are shown. Uniaxial tensile stress values of around 200 MPa are possible with the bending fixture. Giant piezoresistance is measured for wires of 50 nm-thick and widths from 25 nm to 1 ??m. Nonlinear characteristics at high stress level and impact of backgate...
This paper presents a new experimental method to estimate the fatigue behavior of polysilicon thin films by using cyclic loading with gradually increasing stress amplitude. This method solves fundamental problems of conventional fatigue experiments with constant amplitude. The fatigue crack extension process determining fatigue lifetime was estimated by the well-known Paris law with two unknown parameters...
In this paper, the microwave performance of coplanar waveguides (CPWs) fabricated on high-resistivity silicon (HRS) substrates with various polysilicon film thicknesses was investigated. CPWs were fabricated on p-type silicon substrates with resistivities of 6000-8000 ??-cm. Polysilicon films with thicknesses ranging from 100 to 900 nm were deposited by LPCVD, in which a 300 nm-deposited polysilicon...
In this paper, we report the room temperature magnetoelectric properties of Bi0.7Dy0.3FeO3 (BDFO) thin films deposited on conducting p-type (100) silicon substrates using pulsed laser deposition (PLD) technique. BDFO thin films on silicon demonstrated a saturated ferroelectric hysteresis and ferromagnetic hysteresis. More interestingly, we have observed a change in electric polarization with applied...
In this paper, ZnO thin films were deposited on SiO2/Si (100) substrates by radio frequency magnetron sputtering using high purity (99.999%) ZnO target, grown time was 2 h, 4 h and 8 h respectively. After annealing in pure oxygen atmosphere, high-quality ZnO thin film was obtained. X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) were employed to characterize the quality of the films...
There are a number of PV device technologies, loosely categorized as crystalline silicon, thin films, and concentrators, each designed to reach low cost goals. Two decades ago, PV-generated electricity prices were in the range of one or more dollars per kilowatt-hour. Today, in excellent sunlight, the lowest cost systems produce electricity at barely over 10 c/kWh, and systems the size of Hoover Dam...
In this research, the characterization of single and dual layer of anti reflection coating films are studied. The research is aim to compare the performance of single and dual layer of anti reflection coating film for solar cell application. In addition, several types of anti reflection coating films are also studied. The research has been carried by using Silvaco TCAD. It is desire to achieve higher...
In this work we demonstrate that the HHN model allows to accurately describe the dependences of the subband energies and effective masses in (-110) thin silicon films. In order to do so, we appropriately rotate the HHN Hamiltonian for each pair of the valleys and resolve the subband structure numerically. The zero boundary conditions for the wave functions at the interfaces are applied.
This work focuses on simultaneous regulation of film thickness, surface roughness and porosity in a multiscale model of a thin film growth process using the inlet precursor concentration as the manipulated input. Specifically, a continuous macroscopic partial differential equation model is used to describe the dynamics of the gas phase. The thin film growth process is modeled via a microscopic kinetic...
The authors define the threshold voltage of undoped-body UTB DG MOSFET as the gate voltage at which the mid-channel (center of the film) potential begins to saturate. A center potential based approach is proposed to determine the threshold voltage which is quite physical, as the centroid of the inversion layer charge is closer to the center of the silicon film for UTB devices of the film thickness...
The functionality of interdigitated gold/aluminum electrodes on PdO films for water vapor (WV) sensing was studied. The characterization of the structure Au/Al/PdO/Al/Au was done at different temperatures introducing WV pulses in the test chamber under a continuous flow of N2 to produce the desired moisture conditions. PdO films were obtained by thermal oxidation of Pd films at 650??C in air atmosphere...
Organic memory devices were realized using oxadiazole-containing polyether as active organic layer. A thin film containing this molecule was sandwiched between n-type silicon substrate (cathode) and aluminum (anode) electrodes. The memory cells showed an on-off ratio of 4.9 orders of magnitude at 1.3 V and a threshold voltage of about 2.9 V. The analysis of transport was realized considering space...
The thin film is advantageous for preparing the compliant spring and structures with little mass. The surface micromachining can take these advantages. Since the film structures suffer from the bending generated by the stress imbalance inside, the bulk micromachining is now frequently used. When the tensile stress is introduced in the thin film combining with bulk micromachining, the structural robustness...
Silicon rich oxide has shown photoemission. However, normally it is required a high temperature annealing in order to get intense emission. On the other hand, Si nanocrystals, nC, obtained by electrochemical methods and poured in a solutions have shown photoemission that depends on their size. Then, Si nC obtained by electrochemical methods are an alternative to obtain emissive silicon rich oxide...
Amorphous carbon (a-C) thin films were deposited on silicon (Si) substrate by pyrolysing camphor oil at various temperatures with thermal chemical vapor deposition (CVD) technique. The deposited a-C thin films were characterized by Current-Voltage (I-V) Measurement and UV-VIS-NIR Spectrophotometer. The electrical and optical properties of these films have been studied. It was found that increasing...
P-type amorphous silicon was deposited on crystalline n-type silicon substrates to obtain hetero-junction diodes. Additionally, a thin intrinsic amorphous silicon layer was inserted between both the p-type film and the n-type substrate to study its passivation effect on the c-Si surface. We studied the influence of the quality of the amorphous films upon the performance of the hetero-junction diodes...
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