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Three-dimensional integrated circuits (3D ICs) provide a promising solution for overcoming delay/power problems of 2D ICs by stacking chips vertically. Signal propagation speed among the stacked chips is very important for 3D IC systems. We propose a simple model for analyzing the vertical signal propagation in through-silicon-via-based 3D ICs and discuss the impact of physical parameter variations...
We present a CMOS Charge Sensitive Amplifier (CSA) specifically designed for low capacitance pixel or silicon drift detectors for high resolution X-ray spectrometry. The intrinsic noise of the CSA has been measured at different operating temperatures with a triangular shaping with peaking time from 0.8 µs to 102 µs. At room temperature, the intrinsic Equivalent Noise Charge (ENC) shows a minimum of...
The design of an integrated charge-sensitive preamplifier suitable for γ-ray spectroscopy is presented. It is fully integrated, except for the feedback resistor, and can drive directly a 50Ω cable with its low impedance output stage. It is designed in AMS 0.35µm technology and its small dimensions and low power consumption (10 mW) are optimized for multi-channel applications. It works both with germanium...
In this paper, the design and fabrication techniques of a differential pressure sensor used in precision air data module (ADM) are described, and its performance test results are presented. A differential pressure senor for an ADM detects the differential pressure between static and total pressure, which can cover differential pressure of 0~20psi range with less than 1% accuracy. In order to satisfy...
AlN films, doped with Si, were deposited on p-Si substrates by pulsed laser deposition (PLD) in nitrogen ambient kept at 0.1 or 10 Pa. MIS structures with incorporated PLD AlN:Si films were formed and their current-voltage, I-V, and 1 MHz C-V characteristics were measured. The analysis of obtained characteristics of these MIS structures revealed the important role of aluminium vacancies in charge...
The usual electrodes from electrophysiology are resistive. A variable metal-skin contact resistance frequently generates unpleasant artifacts. The capacitive electrodes avoid this disadvantage and are suitable for variable biosignals recording. The main novelty of this paper is the manufacturing of capacitive electrodes with all terminals on the top surface, letting free the electrode bottom for physiological...
Stimuli space charge measurement methods can complement the microelectronic techniques in terms of sensitivity, charge localization and possibility to follow the electrical state of semi-conducting structures and components. In this paper, experimental set-ups based on thermal stimuli are used to obtain information about the electric charge distribution across metal-oxide-semiconductor structures...
The multichip packaging techniques have evolved over the years and have resulted in many solutions towards 3D integrated circuits. The key component to these technologies is Through Silicon Via. Typical TSV structures (2.5 micron diameter and 20 micron length and 5 micron diameter and 50 micron length) are analyzed using HFSS, with a view to generate data and understanding of TSV performance, specific...
Converter topology, power devices, passives elements and technology are the keys elements to achieve highly efficient and integrated converters. This article discusses each of these items with a point of load converter application in mind. The potential advantages of series connection are discussed: increase of both the specific power and the efficiency, reduction of semiconductors voltage rating...
The rapid technology developments in the metal-oxide-semiconductor industry have lead to CMOS scaling down to the sub-20nm regime, and according to the 2009 ITRS projections printed gate lengths will scale down to approximately 12nm by 2020, resulting in significant changes in both the information processing technology as well as the device manufacturing technology. The most promising devices now...
A multi-capacitor coupled signaling structure is employed to enable low-power high frequency communications in 10 mm long interposer traces. On-chip Metal-Insulator-Metal (MIM) capacitor was used to implement the Multi capacitor structure. A continuous time feed forward tunable capacitive equalization was used to compensate for the frequency dependent losses. The multi-capacitor structure is used...
This Standard defines a Universal Test Interface (UTI) Pin Map Configuration for portable and bench top test requirements utilizing IEEE Std 1505, which will provide an open architecture serving the general electronic test industry. The UTI standard will permit users to create low-cost COTS interface solution and migrate test fixtures (i.e. adapters, interface devices,etc.), transparently between...
This paper deals with the estimation problem in three-phase, three-level Modular Multilevel Converter (MMC) using nonlinear observer to realize an accurate estimation of unmeasured variables. It is shown that the desired states to be exponentially convergent if all system signals are bounded. An observer based on adaptive backstepping approach is used for capacitor voltages estimation from the arm...
The cascode structure is widely used for high voltage normally-on wide-band-gap devices. However, the interaction between the high voltage normally-on device and the low voltage normally-off Si MOSFET may induce undesired features. This paper analyzes the voltage distribution principle during the turn-off transition as well as the zero-voltage-switching (ZVS) principle during the turn-on transition...
This paper proposed a novel modeling of the TSV MOS capacitance by finite difference (FD) method without the assumption of the full depletion approximation (FDA). The potential distribution in the oxide liner and depletion region can be obtained by FD with only one iteration. With the potential distribution, the TSV capacitance-voltage (C-V) characteristics can be easily obtained and good agreements...
A band-pass-filter (BPF) based on silicon substrate was designed and simulated. Different software was applied to design and simulate the character of the filter. A three-order filter was designed dedicating to range 2.4 GHz-2.5 GHz use. The ideal topology circuit was designed with passive inductors and capacitors. Moreover, the integrated passive devices (IPDs) were modeled and simulated with thin...
Active control of the dead-time in a SLR converter is in this paper shown to be of great importance. The efficiency of the full-bridge will increase if the dead-time control is made in the right way. Different control algorithms are shown to work well for different power switches. For the SiC MOSFET and the SiC BJT the control algorithms are tested experimentally.
The BIPM has an ongoing project to establish a Thompson Lampard calculable capacitor for use in the determination of the von Klitzing constant, RK. This paper describes key parts of the measurement chain used to provide the link between the dc quantum Hall effect and the calculable capacitor. The bridge used to calibrate a conventional 1 pF standard against a known 0.4 pF capacitance change is presented...
This paper discusses the impact of Power MOSFETs (PMs) Capacitance-Voltage (C-V) characteristics on switching losses in power converters. A fast and robustly convergent numerical technique is adopted to analyze the sensitivity of PMs power losses with respect to their C-V shapes. Such technique helps both in identifying desirable specifications for PMs design, and in achieving appropriate selection...
This paper reports on an industrial DHEMT process for 650V rated GaN-on-Si power devices. The MISHEMT transistors use an in-situ MOCVD grown SiN as surface passivation and gate dielectric. Excellent off-state leakage, on-state conduction and low device capacitance and dynamic Ron is obtained. Initial assessment of the intrinsic reliability data on the in-situ SiN is provided.
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