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3D stacking of microprocessors is an idea that promises to continue the accomplishment of high performance processors while allowing the increment of transistors density inside a given area. However, 3D stacking inevitably increases the power density and, therefore, thermal issues related to this idea must be overcome first in order to make use of all the advantages of 3D processors. In literature,...
The continual trend of microelectronics to miniaturization, accompanied by the increase of the power density has given modern science a huge challenge. The thermal transport in an electronic device has to be addressed. Therefore, the fast and precise measurement of thermal properties like temperature, thermal conductivity and diffusivity is needed. Especially the spatial resolution needs to be enhanced...
We present a Monte Carlo simulation tool to address phonon transport in silicon and silica by solving the Boltzmann Transport Equation. This tool aims to provide useful data for thermal microscopy at nanoscale where samples and tips may be of various size and shape. It enables also to predict the effect of an oxide layer or interface between similar materials. Especially, we compute the thermal conductance...
The Seebeck coefficient is a parameter to measure the efficiency of materials in generating thermoelectric voltage from certain temperature gradient. In this work, the effect of aluminum nano particle on the Seebeck coefficient for silicon based thermoelectric power generator is investigated. Thermoelectric devices which consist of arrays of doped phosphorus and boron channels have been fabricated...
We demonstrate an efficient tunable grating coupler using thermo-optic heater in silicon. Tuning of the central wavelength from 1537nm to 1573nm is achieved with an increased 1 dB-bandwidth up to 59nm.
We demonstrate a thermally tunable silicon grating coupler. The experimental result of ∼10nm shift in center wavelength at about 410mW electrical power was in reasonable agreement with the expected ∼16nm tuning range.
We demonstrated bonding of thin film InP and Si using wafer direct bonding technique and compared with bulk InP/Si bonded sample in terms of bonding strength and defect formation. Electrical conduction through the interface was also investigated.
The dynamic behavior of a U-shaped electrothermal actuator is investigated in this paper based on experimental findings and FEM simulations. Few previous works are found in the literature that have addressed the dynamic response of U-shaped actuators. A lack of data on the transient displacement of the actuator in the heating and cooling cycles is noted. Experiments are made in order to characterize...
This paper describes unseeded growth of poly-crystalline Ge with well-oriented large-size grains on insulator from amorphous Ge by scanning pulsed green laser annealing. The Ge was patterned to 2-µm-wide stripes and then annealed by laser irradiation. The annealed Ge stripes were crystallized with well-oriented (111) surface and the grain size was 2 µm wide and ∼10 µm long, where the maximum length...
This paper presents the structure design, working principles and heat transformation of the on-chip temperature-control for dual-mass micro-gyroscope. The dedicated temperature sensor and heater provide real-time monitored and controlled working environment for the micro-gyroscope, thermal stabilization is thus achieved by maintaining the gyroscope temperature larger than the highest temperature of...
We demonstrate an integrated tunable silicon band-pass filter with low in-band ripples of 0.3 dB, a high contrast of 55 dB, and no free-spectral range. A record bandwidth tuning over 670 GHz was achieved.
Solar energy is typically converted into electrical energy or collected as thermal energy. Co-generation of electricity and low-grade heat allows a more efficient use of the solar spectrum. To this end, a prototype of a high-concentration photovoltaic thermal (HCPVT) system is demonstrated. It is based on low-cost optical concentrator materials, a high-efficient, densely-packed multi-cell receiver...
The Infrared Lock-in Thermography (LIT), which is well establish technique for non-destructive evaluation, can be used to identify and locate thermal active electrically defects like shorts and resistive open in microelectronic devices. Most of the localization methods are performed directly on top of die surface. However, the Infrared Lock-In Thermograph (IR-LIT) is one of the localization methods...
The bending loss of silicon slot waveguide is experimentally investigated at 1064 nm and the measured value is 4.1 dB/180° with radius of 15 µm. Consequently, tunable micro-rings are demonstrated based on such slot waveguides.
A novel variable optical attenuator (VOA) based on two coupled rings in silicon-on-insulator (SOI) waveguides has been proposed and experimentally demonstrated, from which an attenuation varying from 0 dB to 35 dB can be obtained.
The front contact metallization of Si solar cells begins with printing a mixture of an Ag powder, glass frit (mixture of metal oxides such as PbO, SiO2, B2O3, and Bi2O3) and an organic binder over the antireflection coating that is subsequently fired up to about 825 °C. It is known that the frit allows the paste to react with and burn through the anti-reflective coating such that the metal can react...
ZnSiP2 is a potential optoelectronic material with possible application in lasers, LED's, photonic integrated circuits, and photovoltaics. The development of ZnSiP2 as a photovoltaic material could address the current technological challenge of implementing a monolithic top cell on silicon for tandem photovoltaics. In this work we present a detailed description of the growth of ZnSiP2 single crystals,...
We report on successful control of the growth of dendrite crystals to suppress dislocation generation in practical size multicrystalline silicon ingots by modifying the growth condition. Local temperature distributions and gas flow above silicon melt surface were controlled by utilizing additional heat insulators and carbon components in a furnace. The size, positions and shapes of the insulators...
PV cells efficiency increase by employing FZ silicon was shown in a series of works. At PVSC40 we reported our results in development of cheap FZ feedstock production using electron beam heating. However, we have encountered difficulties with obtaining dislocation free FZ single crystals from our rods and rods diameter had substantial fluctuations. Source of generation of previously absent dislocations...
The purpose of this study is to understand the relationship between the precursor layer deposited by CuGa-NaF sputtering target and selenidization process. The addition of Na was carried out by using the CuGa-NaF sputtering target. In the CuGa-NaF precursor film, the presence of Na-Ga-F compound was observed. The desorption of fluoride gas from the Na-Ga-F compound occurred, and it accompanied the...
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