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In this paper, the CNT TSVs, as well as Cu/CNT composite TSVs, are investigated based on the equivalent circuit model. The effective complex conductivity, which incorporates the kinetic inductive effect of CNTs, has been employed for high-frequency characterization. The performance comparison between Cu, CNT, and Cu/CNT composite TSVs are carried out. It is found that Cu/CNT composite TSVs can be...
In this paper, a systematic test approach is presented for rapid detection of the defects in pre- and post-bond through-silicon vias (TSV). The cylindrical, annular, and coaxial TSVs are studied using the full-wave electromagnetic simulation. The impacts of open and pinhole defects in the pre-bond TSVs can be effectively observed in the Z-parameter variation. Then, a defect detection scheme is developed...
Circuit model for TSV-based solenoid inductors is presented and investigated. Based on the measurement, the related lumped circuit elements can be extracted, and they are independent of the operating frequency by virtue of the RL ladder. Hence, the circuit model is compatible with the SPICE simulators. Based on the circuit model, the impacts of design parameters on the quality factor and inductance...
Here, we present a surface potential based compact model for common double gate MOSFET (indDG) along with implementation results. The model includes core model, intrinsic model (Short Geometry effects and Non-quasi static effect) and noise model for asymmetric common double gate (CDG) MOSFET. The existing models for CDG MOSFET are developed for device with symmetric oxide thickness across both the...
Online Social Networks (OSNs) have been used as the means for a variety of applications, like employment system, e-Commerce and CRM system. In these applications, social influence acts as a significant role, affecting people's decision-making. However, the existing social influence evaluation methods do not fully consider the social contexts, like the social relationships and the social trust between...
The single-diode model, which is widely used for describing the behaviour of the photovoltaic crystalline and multi-crystalline cells, requires to be properly adapted for reproducing the electrical behaviour of amorphous thin film silicon cells. As for the former case, five parameters must be identified for having a good fitting with respect to the experimental measurements or the data reported in...
A new production ready compact model for future FinFETs is presented. This single unified model can model FinFETs with realistic fin shapes including rectangle, triangle, circle and any shape in between. New mobility models support Ge p-FinFETs and InGaAs n-FinFETs. A new quantum effects model enables accurate modeling of III–V FinFETs. Special attention is paid to shape agnostic short-channel effect...
A laser bonding technique has been developed recently to create an innovative material based on a silicon/diamond interface. In this work, we propose the development and the application of a numerical model for TCAD simulations of poly-crystalline diamond conceived for Silicon-on-Diamond (SoD) sensors to be used, e.g., as particle detectors in High Energy Physics (HEP) experiments. The model is based...
This work presents a design of temperature compensated and supply regulated current reference circuit with reduced process variation at low supply voltage of 1.5 V. The supply regulation of the proposed circuit is improved by using a regulated cascode technique together with an error amplifier in the CTAT (complementary to absolute temperature) circuit. The temperature compensation is achieved by...
Here we present modeling results on crystalline Si (c-Si)/amorphous Si (a-Si) heterojunction solar cells using a physical simulation which includes various models for the defect states in the a-Si barriers, as well as explicit models for the ITO emitter contact. We investigate the impact of the band offsets and barrier heights of the a-Si/c-Si interface, particularly in terms of the open circuit voltage...
Equivalent circuit models are often applied to experimental current-voltage (I-V) data of solar cells to quantify key features of device performance. The appropriate model to use is heavily dependent on the device architecture and the properties of each material layer. With the application of an appropriate model, physical meaning can be applied to each of the fitting parameters, to better describe...
A CMOS front-end for fast amplification triggering and integration of signals produced by a Silicon Photomultiplier (SiPM) coupled with a LYSO scintillator is presented. This solution is ideal for Positron Emission Tomography (PET), where good timing resolution is required. This design is realized in 0.15μm CMOS process. The front-end features a low input impedance of 4.5Ω and high bandwidth of 100MHz...
This paper looksat the impact of consideringthe exact or approximated values for the nonlinear depletion capacitance in a TSV equivalent circuit for transient analysis. Furthermore, the effects of the time variant and nonlinear behavior of the doped bulk silicon substrate on signal propagation and crosstalk are also studied.
Silicon interposer is the enabling technology for 2.5D IC integration which supports higher levels of integration and improved electrical performance. An interposer can suffer from various physical defects affecting the overall performance of 2.5D ICs. This paper presents a new method to perform manufacturing tests for interposers utilizing a Delay Locked Loop (DLL). In the proposed method short-time...
The purpose of this study is to predict electromagnetic interference (EMI) using circuit simulation integration with 2.5-D and 3-D full-wave, electromagnetic (EM) field solvers. These simulations predict the electronic system performance using signal integrity (SI), power integrity (PI) and far field radiation metrics while incorporating the entire system virtually. SPICE, IBIS, PCB layout, Connectors,...
This paper proposes an equivalent circuit model of 3-D DRAM cell transistors with recess gate and saddle fin structure for the first time. The model effectively characterize the sub-threshold and off margin behavior of the scaled DRAM cell transistor by considering the parasitic sub-channel and vertical transistor components into account. TCAD simulation and experimental data have confirmed the accuracy...
A new parasitic elements extraction technique for GaN HEMT transistors on Si substrate is presented. This technique is based on the use of two de-embedding GaN structures: open and thru-short. The equivalent circuit models along with the extraction procedure are detailed. A very good agreement between measurements and simulations validate the developed extraction method.
The characterization on coupling effect of on-chip octagon spiral inductors has been presented. The coupling effects in different parted distances are presented. And the relationship between the coupling and the distance is plotted and discussed. What's more, a practical design tip about the distance of adjacent inductors is presented. Finally, the predominant role of coupling effect is investigated...
In this paper an Hspice macro model is presented to model the snapback characteristics of GGNMOS (gate-grounded NMOS) and GCNMOS (gate-coupled NMOS) under ESD stress. The 5V NMOS be simulated in this paper is based on the 0.35um BCD technology as an ESD protection device. The new macro model has successfully predicted the trigger voltage and holding voltage of the GGNMOS and GCNMOS according to the...
This paper proposes an effective model for evaluating vertical signal propagation delay in through silicon via (TSV) based three-dimensional integrated circuits (3-D ICs). The capacitance model for on-chip interconnects is also proposed. All parasitic parameter values for an entire structure can be calculated by the closed-form equations. The delay model is constructed with the first- or second-order...
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