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A modeling method to consider simulation switching noise of HBM and its impact on HBM timing is described. This method combines partial element equivalent circuit model for power delivery network and S-parameters based HBM channel model together in HBM studies.
In this paper, we present the performance of the first frequency multiplier using the non-linearity of distributed SIS junctions. The prototype doubler based on distributed SIS junction was for the first time able to pump an SIS mixer. The multiplication efficiency of the distributed SIS junction is 15–30 % for a fractional bandwidth of 10% with excellent spectral line purity. The measured −3 dB line...
Pass-gates logic is known to be intrinsically more energy efficient than static CMOS. This feature attracted the research interest over the years and many working implementations have been demonstrated. Recent works, in particular, have shown that pass-gates logic is well suited for ultra-low power adiabatic circuits mapped on emerging technologies.
This paper presents the design exploration of a basic cascode circuit (CAS) targeted to increase the intrinsic gain Aν of a graphene field-effect-transistor (GFET) by decreasing its output conductance go. First, the parameters of a large-signal compact-model, based on drift-diffusion carrier transport, are fit to measurements carried on 2 CVD GFETs, fabricated independently by different research groups...
We demonstrated the diaphragm type PZT oscillator performance through simulation experiments. To achieve the desired frequency, firstly, the size of a diaphragm and a thickness of PZT and Si layers are optimized. Then, we select three different PZT/Si models. Finally, we analyze the models transmission efficiency, receiving sensitivity (piezoelectric voltage / electric charge) and frequency bandwidth...
With the fast-switching devices like GaN HEMT applying in power converters, the converters achieve higher switching frequency, higher efficiency and higher power density. As a result of the fast switching edge and high commutation speed, the issues like electromagnetic interference (EMI), overvoltage, gate protection become daunting tasks. The active gate control technique has been verified on the...
This paper presents 1.8GHz low power and low voltage prescaler IC using silicon ECL technology. Its power supply voltage is 3.0v typically and power dissipation is 38mW. This performance is achieved by high optimization of circuit design technology using accurate circuit simulation.
Recently, experimental Germanium CMOS devices and circuit are reported for advanced technology nodes for the first time. In this paper, we have modeled Germanium On Insulator (GeOI) device with industry standard compact model for independent double gate MOSFET (BSIM-IMG) with updated mobility model. It is shown that BSIM-IMG with updated mobility model accurately captures static characteristics for...
In this paper, a novel 3D stacked package structure with horizontal fins is designed to solve the heat dissipation issue. In order to verify the thermal performance, a 3D stacked package test vehicle with five chips and two interposers is built in a CFD software-Icepak. The size of the chip is in accordance with commercial thermal test chip (TTC-1002, TEA). Three different cooling methods of this...
Three-dimensional integrated circuit as an extension of the conventional two dimensional processes is viewed as the best choice to continue Moore's law. The extreme miniaturization of size and the complication combination of structure of 3-D integrated circuit make a higher request to the relevant technologies including wafer thinning. Be living in the process of finding the new principle of wafer...
The waveguide is the most fundamental component of integrated photonic circuits. We observe that roughness-induced backscattering in high-contrast silicon waveguides generates over 10 dB spectral transmission variations in centimeter-long silicon waveguides.
In this paper, the equivalent circuit model of a pair of TSVs in a passive interposer base is developed, with the nonlinear MOS capacitance effect treated appropriately. Based on the circuit model, the transient analysis of the interposer TSVs is carried out. The results would be helpful for the design and practical applications of interposer-based 2.5-D IC systems.
3D Integration is a promising technology to continue the trend of Moore's law. However, higher density from die stacking introduces thermal challenges that require more expensive packaging and cooling solutions. An alternative integration technology is interposer-based 2.5D design, which has fewer thermal issues but adds extra interposer cost. Designers must be aware of the system-level cost benefits...
Through silicon via (TSV) based 3DIC has allowed vertical integration of multiple dies for wide I/O configuration. With thousands of TSVs, data transfer rate can be reduced, while maintaining the highest bandwidth compared to the systems in conventional integrated chips and packages. The challenges lie on high yield fabrication process. The trend in dimension of TSV is continuously decreasing, which...
The characteristics of the pulsed power switch reversely switched dynistor(RSD) based on Si and SiC are analyzed by contrast in the view of the device models, and the advantages of the RSD fabricated by the wide bandgap semiconductor SiC are illustrated in this paper. By establishing the two-dimensional numerical models of the devices, combined with the external circuit models, the blocking characteristics...
Crosstalk between the interconnects cause serious electromagnetic interference (EMI). The high density interconnects, including redistribution layers (RDLs) and through-silicon-vias (TSVs) in silicon interposer, require effective crosstalk-reduction signaling schemes. In this paper, a novel co-planar waveguide (CPW) RDL structure, where the ground lines directly contact the silicon substrate without...
Technology scaling along with unprecedented levels of device integration has led to increasing numbers of analog/mixed-signal/RF design bugs escaping into silicon. Such bugs are manifested under specific system-on-chip (SoC) operating conditions and their effects are difficult to predict a-priori. This paper describes recent advances in detecting and diagnosing such bugs using "guided" stochastic...
Renewable energy sources are alternatives to fossil fuels. These sources contribute to reducing emissions of greenhouse gases, diversify energy supply and reduce dependence on volatile and unreliable fossil fuel markets (particularly oil and gas). In this context, solar energy has a key role in the premise of having available electricity with less environmental impact. Within the classification of...
It is well known that Joule heat losses in integrated circuits (ICs) may change electrical behaviors of devices, especially semiconductor components. In this paper, a meshless approach based on a radial point interpolation method (RPIM) is developed to numerically model the coupled electrical-thermal process in time domain. The effectiveness of the proposed RPIM is verified through simulation of thin-film...
The very narrow mesa structures based on our 7th generation IGBT process are fabricated and it is found that the device with the narrowest mesa shows very poor short circuit (SC) withstand capability although it suppresses the conduction loss considerably. This poor SC capacity is caused by non-saturated output characteristics which are originated by collector bias induced barrier lowering in the...
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